Results 11 to 20 of about 7,048,832 (98)

Processes of the Reliability and Degradation Mechanism of High-Power Semiconductor Lasers

open access: yesCrystals, 2022
High-power semiconductor lasers have attracted widespread attention because of their small size, easy modulation, and high conversion efficiency. They play an important role in national economic construction and national defense construction, including ...
Yue Song   +11 more
doaj   +2 more sources

A Review of Select Patented Technologies for Cooling of High Heat Flux Power Semiconductor Devices

open access: yesIEEE transactions on power electronics, 2023
The development of wide band-gap power electronics over the last two decades has stimulated a tremendous amount of research into high-performance liquid cooling solutions for high heat flux (200–1000 W/cm$^{2}$) power semiconductor devices.
S. Joshi   +6 more
semanticscholar   +1 more source

Overview of Wide/Ultrawide Bandgap Power Semiconductor Devices for Distributed Energy Resources

open access: yesIEEE Journal of Emerging and Selected Topics in Power Electronics, 2023
This article provides an overview of power semiconductor devices (PSDs) for the distributed energy resource (DER) system. To begin with, an overview of electrically triggered silicon carbide (SiC) and gallium nitride (GaN) devices followed by a brief ...
S. Mazumder   +16 more
semanticscholar   +1 more source

Review of Topside Interconnections for Wide Bandgap Power Semiconductor Packaging

open access: yesIEEE transactions on power electronics, 2023
Due to their superior material properties, wide bandgap (WBG) semiconductors enable the application of power electronics at higher temperature operation, higher frequencies, and higher efficiencies compared to silicon (Si).
Li‐shuenn Wang   +4 more
semanticscholar   +1 more source

Ultra-wide bandgap semiconductor Ga2O3 power diodes

open access: yesNature Communications, 2022
Ultra-wide bandgap semiconductor Ga2O3 based electronic devices are expected to perform beyond wide bandgap counterparts GaN and SiC. However, the reported power figure-of-merit hardly can exceed, which is far below the projected Ga2O3 material limit ...
Jincheng Zhang   +12 more
semanticscholar   +1 more source

Fabrication of amorphous Al2O3 optical film with various refractive index and low surface roughness

open access: yesMaterials Research Express, 2020
Alumina(Al _2 O _3 ) thin film has been widely used in many applications due to its excellent properties, especially in optical films and semiconductor industries.
Yunping Lan   +5 more
doaj   +1 more source

NO2 Adsorption Sensitivity Adjustment of As/Sb Lateral Heterojunctions through Strain: First Principles Calculations

open access: yesCrystals, 2023
Strain engineering is an effective way to adjust the sensing properties of two-dimensional materials. In this paper, lateral heterojunctions (LHSs) based on arsenic and antimony have been designed along the armchair (AC) or zigzag (ZZ) edges.
Li Yang   +7 more
doaj   +1 more source

Different JFET Designs on Conduction and Short-Circuit Capability for 3.3 kV Planar-Gate Silicon Carbide MOSFETs

open access: yesIEEE Journal of the Electron Devices Society, 2020
Both large current capability and strong short-circuit (SC) ruggedness are necessary for 3.3 kV SiC MOSFETs to improve system efficiency and reduce costs in industrial and traction applications.
Ximing Chen   +9 more
doaj   +1 more source

III-nitride power semiconductor technology toward carbon peaking and carbon neutrality goals

open access: yes机车电传动, 2023
Guided by the national development strategy of China about carbon peaking and carbon neutrality, it is necessary to use clean energy and electricity in energy consumption, and power semiconductor technology plays a crucial part in this 2 processes.
LUO Zhuoran   +3 more
doaj  

Machine Learning Algorithm for Efficient Design of Separated Buffer Super-Junction IGBT

open access: yesMicromachines, 2023
An improved structure for an Insulated Gate Bipolar Transistor (IGBT) with a separated buffer layer is presented in order to improve the trade-off between the turn-off loss (Eoff) and on-state voltage (Von).
Ki Yeong Kim   +4 more
doaj   +1 more source

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