Results 11 to 20 of about 372,503 (352)

Leg Conversion Method for the Continuous Control of a Railway Vehicle Propulsion Inverter

Energies, 2023
In this study, we propose a whole-leg scheme for the continuous control of a railway vehicle propulsion inverter. The three-leg method is commonly used to obtain the output AC power from the input DC voltage in a railway vehicle propulsion inverter. When
Jongyong Choi, Gildong Kim, Hyunjae Lee, Gunbok Lee, Jingeun Shon   +4 more
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Fast Response GaAs Photodetector Based on Constructing Electron Transmission Channel

Crystals, 2021
Low-dimensional GaAs photodetectors have drawn a great deal of attention because of their unique absorption properties and superior responsivity. However, their slow response speed caused by surface states presents challenges.
Shuai Guo, Xue Chen, Dengkui Wang, Xuan Fang, Dan Fang, Jilong Tang, Lei Liao, Zhipeng Wei   +7 more
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Peanut Defect Identification Based on Multispectral Image and Deep Learning

Agronomy, 2023
To achieve the non-destructive detection of peanut defects, a multi-target identification method based on the multispectral system and improved Faster RCNN is proposed in this paper.
Yang Wang, Zhao Ding, Jiayong Song, Zhizhu Ge, Ziqing Deng, Zijie Liu, Jihong Wang, Lifeng Bian, Chen Yang   +8 more
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Effect of Post Thermal Annealing on the Optical Properties of InP/ZnS Quantum Dot Films

Nanoscale Research Letters, 2018
The enhancement of optical properties via thermal annealing on InP/ZnS core/shell quantum dot (QD) film was investigated in this work. The increase of emission intensities of the QD films was observed after thermal annealing at 180 °C for 5 min.
Bowen Zhang, Zhipeng Wei, Xinwei Wang, Xuan Fang, Dengkui Wang, Xian Gao, Dan Fang, Xiaohua Wang, Rui Chen   +8 more
doaj   +1 more source

Plasma Processing of III-V Materials for Energy Efficient Electronics Applications [PDF]

, 2017
This paper reviews some recent activity at the James Watt Nanofabrication Centre in the University of Glasgow in the area of plasma processing for energy efficient compound semiconductor-based transistors.
Fu, Yen-Chun, Li, Xu, Millar, David, Peralagu, Uthayasankaran, Thayne, Iain   +4 more
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Fabrication of amorphous Al2O3 optical film with various refractive index and low surface roughness

Materials Research Express, 2020
Alumina(Al _2 O _3 ) thin film has been widely used in many applications due to its excellent properties, especially in optical films and semiconductor industries.
Yunping Lan, Yonggang Zou, Xiaohui Ma, Li Xu, Linlin Shi, Jiabin Zhang   +5 more
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NO₂ Adsorption Sensitivity Adjustment of As/Sb Lateral Heterojunctions through Strain: First Principles Calculations

Crystals, 2023
Strain engineering is an effective way to adjust the sensing properties of two-dimensional materials. In this paper, lateral heterojunctions (LHSs) based on arsenic and antimony have been designed along the armchair (AC) or zigzag (ZZ) edges.
Li Yang, Dengkui Wang, Dan Fang, Hao Yan, Yingjiao Zhai, Xueying Chu, Jinhua Li, Xuan Fang   +7 more
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Different JFET Designs on Conduction and Short-Circuit Capability for 3.3 kV Planar-Gate Silicon Carbide MOSFETs

IEEE Journal of the Electron Devices Society, 2020
Both large current capability and strong short-circuit (SC) ruggedness are necessary for 3.3 kV SiC MOSFETs to improve system efficiency and reduce costs in industrial and traction applications.
Ximing Chen, Xuan Li, Yafei Wang, Hong Chen, Caineng Zhou, Chao Zhang, Chengzhan Li, Xiaochuan Deng, Yudong Wu, Bo Zang   +9 more
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Band structural and absorption characteristics of antimonene/bismuthene monolayer heterojunction calculated by first-principles

Frontiers in Chemistry, 2022
The band gap of lateral heterojunctions (LHSs) can be continuously tuned by changing the widths of their components. In this work, Sb/Bi LHSs based on monolayer Sb and Bi atoms with armchair and zigzag interfaces are constructed, respectively.
Yanyan Zhan, Xuan Fang, Xuan Fang, Dengkui Wang, Dan Fang, Bobo Li, Jinhua Li, Xiaohua Wang   +7 more
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Combined High Power and High Frequency Operation of InGaAsP/InP Lasers at 1.3μm [PDF]

, 1990
A simultaneous operation of a semiconductor laser at high power and high speed was demonstrated in a buried crescent laser on a P-InP substrate. In a cavity length of 300μm, a maximum CW power of 130mW at room temperature was obtained in a junction-up ...
Bar-Chaim, N., Blauvelt, H., Chen, T. R., Yariv, A., Zhuang, Y. H.   +4 more
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