Results 21 to 30 of about 370,543 (306)

Phase-locked arrays of unstable resonator semiconductor lasers [PDF]

, 1986
A phase-locked array of several unstable resonator semiconductor lasers is demonstrated.
Salzman, J., Yariv, A.
core   +1 more source

A dual-grating InGaAsP/InP DFB laser integrated with an SOA for THz generation [PDF]

, 2016
We report a dual-mode semiconductor laser that has two gratings with different periods below and above the active layer. A semiconductor optical amplifier (SOA), which is integrated with the dual-mode laser, plays an important role in balancing the ...
Deng, Qiufang, Guo, Lu, Hou, Lianping, Liang, Song, Xu, Junjie, Zhu, Hongliang   +5 more
core   +1 more source

Broader, flatter optical spectra of passively mode-locked semiconductor lasers for a wavelength-division multiplexing source [PDF]

, 1997
Using the time domain master equation for a complex electric-field pulse envelope, we find analytical results for the optical spectra of passively mode-locked semiconductor lasers. The analysis includes the effect of optical nonlinearity of semiconductor
Eliyahu, Danny, Salvatore, Randal A., Yariv, Amnon   +2 more
core   +1 more source

Brief Review of Photocatalysis and Photoresponse Properties of ZnO–Graphene Nanocomposites

Energies, 2021
As a typical wide bandgap semiconductor, ZnO has received a great deal of attention from researchers because of its strong physicochemical characteristics. During the past few years, great progress has been made in the optoelectronic applications of ZnO,
Chenhao Gao, Keyi Zhong, Xuan Fang, Dan Fang, Hongbin Zhao, Dengkui Wang, Bobo Li, Yingjiao Zhai, Xueying Chu, Jinhua Li, Xiaohua Wang   +10 more
doaj   +1 more source

Effects on the Surface and Luminescence Properties of GaAs by SF6 Plasma Passivation

Crystals, 2018
The passivation effects of the SF6 plasma on a GaAs surface has been investigated by using the radio frequency (RF) plasma method. The RF’s power, chamber pressure, and plasma treatment time are optimized by photoluminescence (PL), atomic force ...
Yumeng Xu, Xin Gao, Xiaolei Zhang, Zhongliang Qiao, Jing Zhang, Lu Zhou, Baoxue Bo   +6 more
doaj   +1 more source

Comparative study of electro‐thermal characteristics of 4500 V diffusion‐CS IGBT and buried‐CS IGBT

IET Circuits, Devices and Systems, 2021
This article compares the major characteristics of the Insulated Gate Bipolar Transistor with Diffusion Carrier Stored (CS) layer (DCS‐IGBT) and the Insulated Gate Bipolar Transistor with the Buried CS layer (BCS‐IGBT).
Rui Jin, Yaohua Wang, Li Li, Longlai Xu, Kui Pu, Jun Zeng, Mohamed Darwish   +6 more
doaj   +1 more source

Analysis of Electrical Characteristics in 4H-SiC Trench-Gate MOSFETs with Grounded Bottom Protection p-Well Using Analytical Modeling

Applied Sciences, 2021
A new analytical model to analyze and optimize the electrical characteristics of 4H-SiC trench-gate metal-oxide-semiconductor field-effect transistors (TMOSFETs) with a grounded bottom protection p-well (BPW) was proposed.
Jee-Hun Jeong, Ogyun Seok, Ho-Jun Lee
doaj   +1 more source

Displacement damage effect of proton irradiation on vertical β-Ga2O3 and SiC Schottky barrier diodes (SBDs)

Journal of Science: Advanced Materials and Devices
In this study, we fabricated vertical Schottky barrier diodes (SBDs) based on wide bandgap semiconductor beta-phase gallium oxide (β-Ga2O3) and silicon carbide (SiC), respectively, and conducted proton irradiation experiments to analyze the radiation ...
Young Jo Kim, Youngboo Moon, Jeong Hyun Moon, Hyoung Woo Kim, Wook Bahng, Hongsik Park, Young Jun Yoon, Jae Hwa Seo   +7 more
doaj   +1 more source

Hybrid power semiconductor [PDF]

, 1985
The voltage rating of a bipolar transistor may be greatly extended while at the same time reducing its switching time by operating it in conjunction with FETs in a hybrid circuit.
Chen, D. Y.
core   +1 more source

Carboxylic‐Acid Functionalized Multiwalled Carbon Nanotube‐Alkane‐Based Resistive Temperature Sensor for Cold Chain Applications

Advanced Engineering Materials, EarlyView.
This study presents a reversible temperature sensor with high switching ratio, ∼103. The device is fabricated using PET‐ITO and carbon nanotube dispersions in alkane. Considering its application in cold chain logistics, a proof‐of‐concept with LED is showcased. Thus, a temperature drop below the threshold temperature (crystallization temperature of the
Sunil Kumar Behera, Philippe Marrec, A. Jorge Parola, Madalena Dionísio, Hugo Águas, Andreia F. M. Santos, Hamed Pourkheirollah, Donald Lupo, César A. T. Laia   +8 more
wiley   +1 more source