Results 11 to 20 of about 370,543 (306)

Effect of Post Thermal Annealing on the Optical Properties of InP/ZnS Quantum Dot Films

Nanoscale Research Letters, 2018
The enhancement of optical properties via thermal annealing on InP/ZnS core/shell quantum dot (QD) film was investigated in this work. The increase of emission intensities of the QD films was observed after thermal annealing at 180 °C for 5 min.
Bowen Zhang, Zhipeng Wei, Xinwei Wang, Xuan Fang, Dengkui Wang, Xian Gao, Dan Fang, Xiaohua Wang, Rui Chen   +8 more
doaj   +1 more source

Fabrication of amorphous Al2O3 optical film with various refractive index and low surface roughness

Materials Research Express, 2020
Alumina(Al _2 O _3 ) thin film has been widely used in many applications due to its excellent properties, especially in optical films and semiconductor industries.
Yunping Lan, Yonggang Zou, Xiaohui Ma, Li Xu, Linlin Shi, Jiabin Zhang   +5 more
doaj   +1 more source

Machine Learning Algorithm for Efficient Design of Separated Buffer Super-Junction IGBT

Micromachines, 2023
An improved structure for an Insulated Gate Bipolar Transistor (IGBT) with a separated buffer layer is presented in order to improve the trade-off between the turn-off loss (Eoff) and on-state voltage (Von).
Ki Yeong Kim, Tae Hyun Hwang, Young Suh Song, Hyunwoo Kim, Jang Hyun Kim   +4 more
doaj   +1 more source

Different JFET Designs on Conduction and Short-Circuit Capability for 3.3 kV Planar-Gate Silicon Carbide MOSFETs

IEEE Journal of the Electron Devices Society, 2020
Both large current capability and strong short-circuit (SC) ruggedness are necessary for 3.3 kV SiC MOSFETs to improve system efficiency and reduce costs in industrial and traction applications.
Ximing Chen, Xuan Li, Yafei Wang, Hong Chen, Caineng Zhou, Chao Zhang, Chengzhan Li, Xiaochuan Deng, Yudong Wu, Bo Zang   +9 more
doaj   +1 more source

III-nitride power semiconductor technology toward carbon peaking and carbon neutrality goals

机车电传动, 2023
Guided by the national development strategy of China about carbon peaking and carbon neutrality, it is necessary to use clean energy and electricity in energy consumption, and power semiconductor technology plays a crucial part in this 2 processes.
LUO Zhuoran, HE Liang, ZHANG Jinwei, LIU Yang   +3 more
doaj  

NO₂ Adsorption Sensitivity Adjustment of As/Sb Lateral Heterojunctions through Strain: First Principles Calculations

Crystals, 2023
Strain engineering is an effective way to adjust the sensing properties of two-dimensional materials. In this paper, lateral heterojunctions (LHSs) based on arsenic and antimony have been designed along the armchair (AC) or zigzag (ZZ) edges.
Li Yang, Dengkui Wang, Dan Fang, Hao Yan, Yingjiao Zhai, Xueying Chu, Jinhua Li, Xuan Fang   +7 more
doaj   +1 more source

Comparison of active dual‐gate and passive mixers for terahertz applications

IET Circuits, Devices and Systems, 2021
The authors propose four versions of a dual‐gate active down‐conversion mixer for H‐band applications. The mixer operates at a local oscillator (LO) frequency of 240 GHz.
Christopher M. Grötsch, Iulia Dan, Laurenz John, Sandrine Wagner, Ingmar Kallfass   +4 more
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Passivation Effect on ZnO Films by SF₆ Plasma Treatment

Crystals, 2019
The passivation effects of SF6 plasma on zinc oxide (ZnO) films prepared by magnetron sputtering were researched. After the SF6 plasma passivation of ZnO films, the grain size increases, there is low surface roughness, and a small amount of Zn-F bonds ...
Yumeng Xu, Baoxue Bo, Xin Gao, Zhongliang Qiao   +3 more
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Band structural and absorption characteristics of antimonene/bismuthene monolayer heterojunction calculated by first-principles

Frontiers in Chemistry, 2022
The band gap of lateral heterojunctions (LHSs) can be continuously tuned by changing the widths of their components. In this work, Sb/Bi LHSs based on monolayer Sb and Bi atoms with armchair and zigzag interfaces are constructed, respectively.
Yanyan Zhan, Xuan Fang, Xuan Fang, Dengkui Wang, Dan Fang, Bobo Li, Jinhua Li, Xiaohua Wang   +7 more
doaj   +1 more source

Continuous-wave Raman laser pumped within a semiconductor disk laser cavity [PDF]

, 2011
A KGd(WO4)(2) Raman laser was pumped within the cavity of a cw diode-pumped InGaAs semiconductor disk laser (SDL). The Raman laser threshold was reached for 5: 6W of absorbed diode pump power, and output power up to 0.8W at 1143nm, with optical ...
Alan J. Kemp, Burns, Calvez, Daniele C. Parrotta, David Burns, Dekker, Demidovich, Grabtchikov, Jennifer E. Hastie, Kemp, Kemp, Lee, Maclean, Maclean, Martin D. Dawson, Mochalov, Murray, Pask, Stothard, Tropper, Walter Lubeigt, Yang   +21 more
core   +1 more source