Results 21 to 30 of about 7,048,832 (98)
Passivation Effect on ZnO Films by SF6 Plasma Treatment
Crystals, 2019 The passivation effects of SF6 plasma on zinc oxide (ZnO) films prepared by magnetron sputtering were researched. After the SF6 plasma passivation of ZnO films, the grain size increases, there is low surface roughness, and a small amount of Zn-F bonds ...
Yumeng Xu +3 more
doaj +1 more source
Comparison of active dual‐gate and passive mixers for terahertz applications
IET Circuits, Devices and Systems, 2021 The authors propose four versions of a dual‐gate active down‐conversion mixer for H‐band applications. The mixer operates at a local oscillator (LO) frequency of 240 GHz.
Christopher M. Grötsch +4 more
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Frontiers in Chemistry, 2022 The band gap of lateral heterojunctions (LHSs) can be continuously tuned by changing the widths of their components. In this work, Sb/Bi LHSs based on monolayer Sb and Bi atoms with armchair and zigzag interfaces are constructed, respectively.
Yanyan Zhan +7 more
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Brief Review of Photocatalysis and Photoresponse Properties of ZnO–Graphene Nanocomposites
Energies, 2021 As a typical wide bandgap semiconductor, ZnO has received a great deal of attention from researchers because of its strong physicochemical characteristics. During the past few years, great progress has been made in the optoelectronic applications of ZnO,
Chenhao Gao +10 more
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Reliability of Wide Band Gap Power Electronic Semiconductor and Packaging: A Review
Energies, 2022 Wide band gap (WBG) power electronic devices, such as silicon carbide metal–oxide–semiconductor field-effect transistors (SiC MOSFETs) and gallium–nitride high-electron-mobility transistors (GaN HEMTs) have been widely used in various fields and occupied
Yalin Wang, Yi Ding, Yi Yin
semanticscholar +1 more source
A Review of Diamond Materials and Applications in Power Semiconductor Devices
MaterialsDiamond is known as the ultimate semiconductor material for electric devices with excellent properties such as an ultra-wide bandgap (5.47 eV), high carrier mobility (electron mobility 4000 cm2/V·s, hole mobility 3800 cm2/V·s), high critical breakdown ...
Feiyang Zhao +4 more
semanticscholar +1 more source
Applied Sciences, 2021 A new analytical model to analyze and optimize the electrical characteristics of 4H-SiC trench-gate metal-oxide-semiconductor field-effect transistors (TMOSFETs) with a grounded bottom protection p-well (BPW) was proposed.
Jee-Hun Jeong, Ogyun Seok, Ho-Jun Lee
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Comparative study of electro‐thermal characteristics of 4500 V diffusion‐CS IGBT and buried‐CS IGBT
IET Circuits, Devices and Systems, 2021 This article compares the major characteristics of the Insulated Gate Bipolar Transistor with Diffusion Carrier Stored (CS) layer (DCS‐IGBT) and the Insulated Gate Bipolar Transistor with the Buried CS layer (BCS‐IGBT).
Rui Jin +6 more
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Effects on the Surface and Luminescence Properties of GaAs by SF6 Plasma Passivation
Crystals, 2018 The passivation effects of the SF6 plasma on a GaAs surface has been investigated by using the radio frequency (RF) plasma method. The RF’s power, chamber pressure, and plasma treatment time are optimized by photoluminescence (PL), atomic force ...
Yumeng Xu +6 more
doaj +1 more source
Journal of Science: Advanced Materials and DevicesIn this study, we fabricated vertical Schottky barrier diodes (SBDs) based on wide bandgap semiconductor beta-phase gallium oxide (β-Ga2O3) and silicon carbide (SiC), respectively, and conducted proton irradiation experiments to analyze the radiation ...
Young Jo Kim +7 more
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