III-nitride power semiconductor technology toward carbon peaking and carbon neutrality goals
机车电传动, 2023 Guided by the national development strategy of China about carbon peaking and carbon neutrality, it is necessary to use clean energy and electricity in energy consumption, and power semiconductor technology plays a crucial part in this 2 processes.
LUO Zhuoran +3 more
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The gain and carrier density in semiconductor lasers under steady-state and transient conditions [PDF]
, 1992 The carrier distribution functions in a semiconductor crystal in the presence of a strong optical field are obtained. These are used to derive expressions for the gain dependence on the carrier density and on the optical intensity-the gain suppression ...
Chen, T. R., Yariv, Amnon, Zhao, Bin
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Passivation Effect on ZnO Films by SF6 Plasma Treatment
Crystals, 2019 The passivation effects of SF6 plasma on zinc oxide (ZnO) films prepared by magnetron sputtering were researched. After the SF6 plasma passivation of ZnO films, the grain size increases, there is low surface roughness, and a small amount of Zn-F bonds ...
Yumeng Xu +3 more
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Comparison of active dual‐gate and passive mixers for terahertz applications
IET Circuits, Devices and Systems, 2021 The authors propose four versions of a dual‐gate active down‐conversion mixer for H‐band applications. The mixer operates at a local oscillator (LO) frequency of 240 GHz.
Christopher M. Grötsch +4 more
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Machine Learning Algorithm for Efficient Design of Separated Buffer Super-Junction IGBT
Micromachines, 2023 An improved structure for an Insulated Gate Bipolar Transistor (IGBT) with a separated buffer layer is presented in order to improve the trade-off between the turn-off loss (Eoff) and on-state voltage (Von).
Ki Yeong Kim +4 more
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Fast detector of the ellipticity of infrared and terahertz radiation based on HgTe quantum well structures [PDF]
, 2008 We report a fast, room temperature detection scheme for the polarization ellipticity of laser radiation, with a bandwidth that stretches from the infrared to the terahertz range. The device consists of two elements, one in front of the other, that detect
A. F. G. van der Meer +23 more
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Broader, flatter optical spectra of passively mode-locked semiconductor lasers for a wavelength-division multiplexing source [PDF]
, 1997 Using the time domain master equation for a complex electric-field pulse envelope, we find analytical results for the optical spectra of passively mode-locked semiconductor lasers. The analysis includes the effect of optical nonlinearity of semiconductor
Eliyahu, Danny +2 more
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Brief Review of Photocatalysis and Photoresponse Properties of ZnO–Graphene Nanocomposites
Energies, 2021 As a typical wide bandgap semiconductor, ZnO has received a great deal of attention from researchers because of its strong physicochemical characteristics. During the past few years, great progress has been made in the optoelectronic applications of ZnO,
Chenhao Gao +10 more
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Applied Sciences, 2021 A new analytical model to analyze and optimize the electrical characteristics of 4H-SiC trench-gate metal-oxide-semiconductor field-effect transistors (TMOSFETs) with a grounded bottom protection p-well (BPW) was proposed.
Jee-Hun Jeong, Ogyun Seok, Ho-Jun Lee
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Semiconductor quantum dots devices: Recent advances and application prospects [PDF]
, 2006 In this paper, a brief review will be given on recent advances in semiconductor quantum dots based optoelectronic devices. The focus will be on two major application areas, i.e., telecom devices and high power light sources, where some device examples ...
Akiyama +28 more
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