Results 41 to 50 of about 7,048,832 (98)

Review of power semiconductor device reliability for power converters

, 2017
The investigation shows that power semiconductor devices are the most fragile components of power electronic systems.Improving the reliability of power devices is the basis of a reliable power electronic system, and in recent years, many studies have ...
Bo Wang, Jie Cai, Xiong Du, Luowei Zhou
semanticscholar   +1 more source

Thermal Analysis of Power Semiconductor Device in Steady-State Conditions

Energies, 2019
Electronic devices can be damaged in an undesirable manner if the junction temperature achieves high values in order to cause thermal runaway and melting.
Adrian Plesca
doaj   +1 more source

Novel copper particle paste with self-reduction and self-protection characteristics for die attachment of power semiconductor under a nitrogen atmosphere

Materials & Design (1980-2015), 2018
A novel die-attach material, Cu particle paste with self-reduction and self-protection characteristics, was designed by simply adding ascorbic acid (AA) into Cu paste.
Yue Gao, Wanli Li, Chuantong Chen, Hao Zhang, J. Jiu, Cai-Fu Li, S. Nagao, K. Suganuma   +7 more
semanticscholar   +1 more source

Characterisation and Modeling of Gallium Nitride Power Semiconductor Devices Dynamic On-State Resistance

IEEE transactions on power electronics, 2018
Gallium nitride high-electron-mobility transistors (GaN-HEMTs) suffer from trapping effects that increases device on-state resistance ($R_\mathrm{DS(on)}$) above its theoretical value. This increase is a function of the applied dc bias when the device is
Ke Li, Paul L. Evans, Christopher Mark Johnson   +2 more
semanticscholar   +1 more source

Structural Design and Experimental Investigation of a 1.65 µm Tapered Semiconductor Laser with InGaAlAs MQWs (On InP)

Photonics
This paper presents the design and fabrication of a 1.65 μm tapered semiconductor laser based on an InGaAlAs multiple quantum well structure (grown) on InP.
Yuan Feng, Weichen Geng, Jinghang Yang, Zhipeng Wei, Jilong Tang, Cong Zhang, Huimin Jia, Lijun Guo   +7 more
doaj   +1 more source

Enhance Reliability of Semiconductor Devices in Power Converters

Electronics, 2020
As one of the most vulnerable components to temperature and temperature cycling conditions in power electronics converter systems in these application fields as wind power, electric vehicles, drive system, etc., power semiconductor devices draw great ...
M. Nguyen, S. Kwak
semanticscholar   +1 more source

Formation of extended defects in heavy-ion-degraded SiC power MOSFETs

APL Materials
Silicon carbide (SiC) power devices offer distinct advantages over silicon-based technology and are envisioned to be of great benefit also for space applications.
Corinna Martinella, Marianne Etzelmüller Bathen, Augustinas Galeckas, Ulrike Grossner   +3 more
doaj   +1 more source

Diamond semiconductor performances in power electronics applications

Diamond and related materials, 2020
This paper proposes a system-level comparison between diamond and SiC power devices. It highlights the benefits of diamond semiconductors for power electronics applications.
Gaetan Perez, A. Maréchal, G. Chicot, P. Lefranc, P. Jeannin, D. Eon, N. Rouger   +6 more
semanticscholar   +1 more source

Performance optimization of planar photonic crystal bound states in the continuum cavities: mitigating finite-size effects

Frontiers of Optoelectronics
Bound states in the continuum (BICs) offer a promising solution to achieving high-quality factor (Q factor) cavities. However, finite-size effects severely deteriorate the BIC mode in practical applications.
Ran Hao, Bilin Ye, Jinhong Xu, Yonggang Zou   +3 more
doaj   +1 more source

Research on Junction Temperature Smooth Control of SiC MOSFET Based on Body Diode Conduction Loss Adjustment

Energies
In a converter of actual working condition, the change in the current and voltage of the power device will cause the junction temperature to fluctuate greatly. This device is subjected to high thermal stress due to the change in the junction temperature.
Junke Wu, Yunpeng Wei, Yuntao Wu, Zhou Wang, Xingyu Li, Xiangnan Wei   +5 more
doaj   +1 more source