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Reliability Assessment of Power Semiconductor Devices for a 13-Level Boost Inverter Topology
IEEE transactions on power electronics, 2023Over the past few decades, research on multilevel inverters (MLIs) has been growing in the power electronics field. The MLI is preferred over the conventional two-level converters due to its improved performance.
M. Siddique +2 more
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Theoretical Study on the Generation of Switching Stress Waves in Power Semiconductor Devices
IEEE transactions on power electronics, 2023Appropriate condition monitoring methods can evaluate the status of power semiconductor devices in time. The traditional methods of condition monitoring are based primarily on the identification of electrical, magnetic, and thermal parameters.
Xuefeng Geng +7 more
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Brief Review of Development and Techniques for High Power Semiconductor Lasers
Acta Optica Sinica, 2021Laser is called the fastest knife the most accurate ruler and the brightest light Together with the atomic energy computer and semiconductor they are called the four new inventions in the 20th century High power semiconductor lasers are widely used in
宁永强 Ning Yong-qiang +9 more
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Statistical Characterization for Loss Distributions of Power Semiconductor Devices
IEEE transactions on power electronics, 2021Advanced loss characterizations of power semiconductor devices are becoming crucial for the reliability evaluation and improvement of power electronics systems.
K. Ma, Jiayang Lin, Ye Zhu
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Reliability Enhancement of a Power Semiconductor With Optimized Solder Layer Thickness
IEEE transactions on power electronics, 2020This article deals with the reliability of a power semiconductor exposing to the severe thermal stresses. The importance of solder joint thickness on the power semiconductor's useful lifetime is demonstrated in this article.
E. R. +5 more
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Scripta Materialia, 2020
For overcoming the heat dissipation problem of GaN-based high-power semiconductor devices, GaN wafers were bonded on polycrystalline and single-crystalline diamond wafers by using Mo/Au nano-layer at room temperature.
Kang L. Wang +4 more
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For overcoming the heat dissipation problem of GaN-based high-power semiconductor devices, GaN wafers were bonded on polycrystalline and single-crystalline diamond wafers by using Mo/Au nano-layer at room temperature.
Kang L. Wang +4 more
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Wide Band Gap Semiconductor Devices for Power Electronic Converters
2023 Fourth International Symposium on 3D Power Electronics Integration and Manufacturing (3D-PEIM), 2023Wide Band Gap (WBG) semiconductors provide superior material qualities that could allow for the functioning of prospective power devices at higher temperatures, voltages, and switching rates than is now possible with Si technology.
S. S. H. Rafin, Roni Ahmed, O. Mohammed
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Semiconductor Contact‐Electrification‐Dominated Tribovoltaic Effect for Ultrahigh Power Generation
Advances in Materials, 2022The semiconductor direct‐current triboelectric nanogenerator (SDC‐TENG) based on the tribovoltaic effect is promising for developing a new semiconductor energy technology with high power density. Here, the first SDC‐TENG built using gallium nitride (GaN)
Zhi Zhang +7 more
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Substrate-Less Power Semiconductor Packaging for the Potential of Recyclability
IEEE Journal of Emerging and Selected Topics in Power ElectronicsRecyclability is being pursued in power electronics. Power semiconductor devices and modules are some of the core components, featuring high material and energy costs in fabrication, but with limited service lifetime.
Jinxiao Wei +9 more
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Automated Heatsink Optimization for Air-Cooled Power Semiconductor Modules
IEEE transactions on power electronics, 2019Heatsink design is critical for power density and reliability enhancement of power semiconductor modules. In this letter, an automated design and optimization methodology for air-cooled heatsinks are proposed based on genetic algorithm and finite element
Tong Wu +4 more
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