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Power Semiconductor Devices for Smart Grid and Renewable Energy Systems
Proceedings of the IEEE, 2017Modern civilization is related to the increased use of electric energy for industry production, human mobility, and comfortable living. Highly efficient and reliable power electronic systems, which convert and process electric energy from one form to the
A. Huang
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Review of SiC based Power Semiconductor Devices and their Applications
2019 2nd International Conference on Intelligent Computing, Instrumentation and Control Technologies (ICICICT), 2019Silicon based Power Semiconductor Devices are extensively used in power electronic applications for the last few decades. Recent developments in power electronics require devices with high power rating, switching frequency and operating temperature but ...
Raksha Adappa +3 more
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Real-Time, In Situ Degradation Monitoring in Power Semiconductor Converters
Applied Power Electronics Conference, 2019This paper develops a methodology to identify a power semiconductor assembly’s spatiotemporal dynamic thermal response changes with degradation, and for subsequent extraction of these varying properties to estimate degradation in actively switching ...
Timothy A. Polom +3 more
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A Survey of EMI Research in Power Electronics Systems With Wide-Bandgap Semiconductor Devices
IEEE Journal of Emerging and Selected Topics in Power Electronics, 2020Wide-bandgap (WBG) power semiconductor devices have become increasingly popular due to their superior characteristics compared to their Si counterparts.
Boyi Zhang, Shuo Wang
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IEEE transactions on power electronics, 2018
The layout of a low-permittivity material is designed in a power semiconductor module to reduce parasitic common-mode (CM) capacitance and hence attenuate the CM current.
Jongwon Shin, Chi-Ming Wang, E. Dede
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The layout of a low-permittivity material is designed in a power semiconductor module to reduce parasitic common-mode (CM) capacitance and hence attenuate the CM current.
Jongwon Shin, Chi-Ming Wang, E. Dede
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An Overview of Wide Bandgap Power Semiconductor Device Packaging Techniques for EMI Reduction
2018 IEEE Symposium on Electromagnetic Compatibility, Signal Integrity and Power Integrity (EMC, SI & PI), 2018Wide band gap (WBG) power semiconductor devices have been increasingly desirable due to their superior characteristics compared to their Si counterparts.
Boyi Zhang, Shuo Wang
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Characterization of Wide Bandgap Power Semiconductor Devices
, 2018At the heart of modern power electronics converters are power semiconductor switching devices. The emergence of wide bandgap (WBG) semiconductor devices, including silicon carbide and gallium nitride, promises power electronics converters with higher ...
Fei Wang, Zheyu Zhang, E. Jones
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Pulsed power technology based on semiconductor opening switches: A review.
Review of Scientific Instruments, 2020This paper presents a systematized review of the research on the production of nanosecond high-power pulses using solid-state generators based on an inductive energy store and a semiconductor opening switch that have been performed in the past 25 years ...
S. Rukin
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Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs
IEEE transactions on power electronics, 2020As a promising ultra-wide bandgap semiconductor, the β-phase of Ga2O3 has attracted more and more interest in the field of power electronics due to its ultra-wide bandgap (4.8 eV), high theoretical breakdown electric field (8 MV/cm), and large Baliga's ...
Hongpeng Zhang +7 more
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High-Density Power Conversion and Wide-Bandgap Semiconductor Power Electronics Switching Devices
Proceedings of the IEEE, 2019Power electronics switching devices made on wide-bandgap (WBG) semiconductors are known to have the potential to make a transformative impact on 21st century energy economy.
K. Shenai
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