Results 131 to 140 of about 250,697 (304)
Radiation hardening of MOS devices by boron [PDF]
, 1974 A technique is described for radiation hardening of MOS devices and specifically for stabilizing the gate threshold potential at room temperature of a radiation subjected MOS field-effect device with a semiconductor substrate, an insulating layer of ...
Danchenko, V.
core +1 more source
Advanced Functional Materials, EarlyView.A fully transparent, all‐metal‐oxide neuromorphic transistor using a sodium‐embedded alumina (SEA) electrolyte is demonstrated. By precisely tuning the thermal annealing process, the chemical composition of the SEA layer is controlled, allowing for the deterministic realization of both short‐term and long‐term synaptic plasticity within the same device
Yonghyun Albert Kwon +7 more
wiley +1 more source
IET Power ElectronicsThe lack of an MMC reliability evaluation approach that incorporates data on essential components' health monitoring in the already related research prevents reliability from being further improved.
Zhonghao Dongye +6 more
doaj +1 more source
Advanced Functional Materials, EarlyView.The role of novel thiophene‐based ligands with halogen substitutions in enhancing the chiroptical and optoelectronic properties of 2D chiral HOIPs has been investigated. By tailoring ligand design, enhanced CD and CPL properties are achieved, with improved CPL discrimination in photodetectors.
Boesung Kwon +4 more
wiley +1 more source
Present Problems of Reliability of Power Semiconductor Devices
Acta Polytechnica, 2000 The paper presents an overview of the main causes of failures of modern switching devices as power MOSFETs, IGBTs, GTOs. The attention is paid to problems of both homogeneity of semiconductor structures and operating conditions, especially at high ...
V. Benda
doaj
Advanced Functional Materials, EarlyView.Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand +13 more
wiley +1 more source
Advanced Functional Materials, EarlyView.We report phosphine‐oxide interlayers for wide‐bandgap perovskite solar cells, in which tuned P = O Lewis basicity enables selective passivation of buried NiOx/perovskite interfaces and introduces interfacial dipoles that strengthen the built‐in field.
JeeHee Hong +6 more
wiley +1 more source
Diode step stress program for JANTX1N4570A [PDF]
The effect of power/temperature step stress when applied to a variety of semiconductor devices was evaluated. Performance of the zener diode JANTX1N4570A manufactured by Siemens and Motorola is reported.
core +1 more source
Atomic Layer Deposition in Transistors and Monolithic 3D Integration
Advanced Functional Materials, EarlyView.Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu +5 more
wiley +1 more source
Multi‐Functional ZnO–Te Heterojunction Devices Enabling Compact Frequency Quadrupler
Advanced Functional Materials, EarlyView.Wafer‐scale ZnO–Te heterojunction devices featuring tunable double negative differential transconductance (D‐NDT) are demonstrated at ≤ 200°C. Leveraging this unique characteristic, a single‐stage frequency quadrupler is realized, achieving a 64%–75% reduction in device count.
Jae Hyeon Jun +8 more
wiley +1 more source