Results 151 to 160 of about 1,801 (215)
Some of the next articles are maybe not open access.
2015
Many industrial applications require control of power such as in variable speed drives, light-intensity controllers, temperature regulators etc. They are controlled by Power devices such as four-layer devices, semiconductor controlled rectifiers (SCRs) etc.
K. M. Gupta, Nishu Gupta
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Many industrial applications require control of power such as in variable speed drives, light-intensity controllers, temperature regulators etc. They are controlled by Power devices such as four-layer devices, semiconductor controlled rectifiers (SCRs) etc.
K. M. Gupta, Nishu Gupta
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2012
Power semiconductor devices are one of the core constituent elements of state-of-the-art power electronic applications. They are employed in a plethora of applications ranging from DC–DC converters, rectifiers, inverters, AC–AC converters, and so on.
Dongsheng Ma, Rajdeep Bondade
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Power semiconductor devices are one of the core constituent elements of state-of-the-art power electronic applications. They are employed in a plethora of applications ranging from DC–DC converters, rectifiers, inverters, AC–AC converters, and so on.
Dongsheng Ma, Rajdeep Bondade
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2004
The most important step in the history of semiconductor devices was the discovery of the transistor effect in a semiconductor material by Bardeen and Brattain [1] and Shockley [2] at the end of the 1940s. This invention stimulated the further development of power semiconductor devices.
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The most important step in the history of semiconductor devices was the discovery of the transistor effect in a semiconductor material by Bardeen and Brattain [1] and Shockley [2] at the end of the 1940s. This invention stimulated the further development of power semiconductor devices.
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2015
In this chapter, the characteristics of high-voltage SiC IGBT, SiC MOSFET, SiC junction gate field-effect transistor (JFET), and low-voltage SiC MOSFET are discussed.
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In this chapter, the characteristics of high-voltage SiC IGBT, SiC MOSFET, SiC junction gate field-effect transistor (JFET), and low-voltage SiC MOSFET are discussed.
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1986
The converter valves used in solid state based on power electronic systems are designated power semiconductor devices. Here they will be abbreviated as power semiconductors. The most important power semiconductors are silicon diodes, thyristors, and power transistors [3.9, 3.15, 3.16, 3.26, 3.27].
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The converter valves used in solid state based on power electronic systems are designated power semiconductor devices. Here they will be abbreviated as power semiconductors. The most important power semiconductors are silicon diodes, thyristors, and power transistors [3.9, 3.15, 3.16, 3.26, 3.27].
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Advances in power semiconductor devices
Microelectronics Journal, 2004Vitezslav Benda, E. M. Sankara Narayanan
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Statistical Characterization for Loss Distributions of Power Semiconductor Devices
IEEE Transactions on Power Electronics, 2021Ke Ma, Ye Zhu, Jiayang Lin
exaly

