Results 1 to 10 of about 2,585 (168)

Electric Field Analysis of Press-Pack IGBTs [PDF]

E3S Web of Conferences, 2018
High voltage IGBT module is the ideal option for the VSC-HVDC power transmission application. At present, wire-bonded technology and press-pack technology are available packaging technologies for high voltage IGBT.
Xinling Tang, Yan Pan, Yanfang Chen, Pengyu Fu, Zhibin Zhao   +4 more
doaj   +4 more sources

Cryogenic DC Circuit Breaker Based on High‐Power Press‐Pack IGBT [PDF]

IET Electric Power Applications
The application of cryogenic and superconducting technologies could revolutionise aircraft electric propulsion systems by substantially increasing their power density and energy efficiency.
Zhongying Wang, Jiawen Xi, Xianwu Zeng, Stefan Steinhoff, Emelie Nilsson, Jean‐Francois Rouquette, Edwin Calderon, Ravi Kiran Surapaneni, Ludovic Ybanez, Xiaoze Pei   +9 more
doaj   +3 more sources

Inductance extraction of Press-Pack IGBT by Considering Displacement Current [PDF]

E3S Web of Conferences, 2018
Taking the displacement current generated by charges accumulation into consideration, this paper presents a inductance extraction method for press-pack IGBT where conductor might not form a closed loop in simulation.
Li Jinyuan, Chen Zhongyuan, Zhang Lei, NI Chouwei, ZHAO Zhibin   +4 more
doaj   +3 more sources

Power Cycle Testing of Press-Pack IGBT Chips [PDF]

, 2014
In this thesis the power cycling capability of individual press-pack IGBT chips is investigated. Press-pack is a packaging technology used for power semiconductors. For press-packs, both thermal and electrical contact to the semiconductor chip is obtained by the application of force on the package. Press-pack IGBTs is claimed by the manufacturers to be
Frank, Øyvind Bjerke
core   +6 more sources

Performance limits of high voltage press-pack SiC IGBT and SiC MOSFET devices

Power Electronic Devices and Components, 2022
Considering the switching frequency limit and electromagnetic interference, the selection of high voltage SiC IGBT and SiC MOSFET is confusing due to punch-through effect and bipolar characteristics of SiC IGBT.
Lubin Han, Lin Liang, Yijian Wang, Xinling Tang, Song Bai   +4 more
doaj   +2 more sources

Integrated Rogowski Coil Sensor for Press-Pack Insulated Gate Bipolar Transistor Chips [PDF]

Sensors, 2020
Recently, the press-pack insulated gate bipolar transistor (IGBT) has usually been used in direct current (DC) transmission. The press-pack IGBT (PPI) adopts a parallel layout of boss chips, and the currents of each chip will be uneven in the process of ...
Chaoqun Jiao, Zuoming Zhang, Zhibin Zhao, Xiumin Zhang   +3 more
doaj   +2 more sources

Press Pack IGBTs for MVDC-breaker Applications [PDF]

ISPS'23 Proceedings, 2023
With the rising demand for higher power densities and robust system control, the need for using press pack IGBT (PPI) devices in medium voltage (MV) applications is also increasing. So far PPI manufacturers have majorly focused on devices with paralleling of IGBTs/diodes inside a single housing, that drives thousands of Amperes and is used for high ...
Koushik Sasmal, Michael Stelte, Jens Przybilla, Christof Drilling, Claus Panzer   +4 more
openaire   +2 more sources

A 3D Thermal Network Model for Monitoring Imbalanced Thermal Distribution of Press-Pack IGBT Modules in MMC-HVDC Applications [PDF]

Energies, 2019
In this paper, the impact of a double-sided press-pack insulated-gate-bipolar-transistor (PP IGBT) cooling structure on its thermal impedance distribution is studied and explored. A matrix thermal impedance network model is built by considering the multi-
Yao Chang, Wuhua Li, Haoze Luo, Xiangning He, Francesco Iannuzzo, Frede Blaabjerg, Weixing Lin   +6 more
doaj   +2 more sources

Cryogenic Power Electronics: Press-Pack IGBT Modules [PDF]

IOP Conference Series: Materials Science and Engineering, 2020
Abstract With the goal of enabling high-power-density cryogenic power converter technology and superconducting power applications for future aircraft and shipboard power systems, the dynamic and static performances of a press-pack IGBT module (T0160NB45A) at ambient and cryogenic conditions are reported. Compared to the wire-bond IGBT’s,
C Park, M J Mauger, T Damle, J Huh, S Steinhoff, L Graber   +5 more
openaire   +2 more sources

Press-pack IGBTs for HVDC and FACTs

CSEE Journal of Power and Energy Systems, 2017
The popularity of insulated gate bipolar transistors (IGBTs) for use in high-voltage direct current (HVDC) transmission and flexible AC transmission systems (FACTS) is increasing. Unfortunately, for these applications wire-bond IGBT technology has a number of shortcomings, such as insufficient current ratings for the most powerful schemes, and ...
Robin Simpson, Ashley Plumpton, Michael Varley, Charles Tonner, Paul Taylor, Xiaoping Dai   +5 more
openaire   +2 more sources