Results 11 to 20 of about 17,760,529 (147)
Electric Field Analysis of Press-Pack IGBTs [PDF]
E3S Web of Conferences, 2018 High voltage IGBT module is the ideal option for the VSC-HVDC power transmission application. At present, wire-bonded technology and press-pack technology are available packaging technologies for high voltage IGBT.
Xinling Tang +4 more
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Application of Silver Sintering Technology in Press-pack IGBTs
机车电传动, 2021 Silver sintering technology which has the characteristics of low temperature connection, low thermal resistance, low stress and high melting point, has gradually become the application trend of interface reliability-connection in insulated gate bipolar ...
Tingchang SHI +5 more
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Study of Thermal Characteristics on Press-pack IGBT Modules
机车电传动, 2013 Thermal characteristics of press-pack IGBT modules were studied by utilizing three kinds of approaches. The thermal model was constructed, and static thermal resistance was analyzed by computation and finite-element simulation, as well as experimental ...
DOU Ze-chun +5 more
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The Journal of Engineering, 2019 Press-pack insulated gate bipolar transistor (IGBT) device is the key component in the voltage source converter high voltage direct current (VSC-HVDC) due the advantage of the short-circuit failure.
Ran Yao +9 more
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Mechanical Stress Analysis in High Power Press Pack IGBT
Zhongguo dianli, 2020 Mechanical stress is one of the key factors affecting the electrical characteristics, thermal characteristics and reliability of high-voltage high-power press-pack IGBT devices.
Xinling TANG +7 more
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CSEE Journal of Power and Energy SystemsIn a press-pack insulated gate bipolar transistor (IGBT), a compact packaging structure forms a strong electromagnetic coupling, thermal coupling, and stress coupling, threatening current sharing, temperature sharing, and stress sharing of paralleled ...
Lubin Han, Lin Liang, Yong Kang
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High Power Press-pack IGBT and Its Application in Pulsed Magnetic-field Generator
Kongzhi Yu Xinxi Jishu, 2017 In some special field of high voltage and high current, the application of conventional IGBT will increase the complexity of system structure and difficulties of control. Therefore, this paper introduced a new type of power press-pack IGBT device.
CHEN Jun +3 more
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Inductance extraction of Press-Pack IGBT by Considering Displacement Current
E3S Web of Conferences, 2018 Taking the displacement current generated by charges accumulation into consideration, this paper presents a inductance extraction method for press-pack IGBT where conductor might not form a closed loop in simulation.
Li Jinyuan +4 more
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IEEE Access, 2023 Stress imbalance significantly affects the performance of a press-pack insulated gate bipolar transistor (IGBT). Time-variant loads and conditions lead to the stress fluctuations, exacerbating the impacts.
Hangyang Li +6 more
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Thermal Design and Simulation of High Power Press-pack IGBT Module
Kongzhi Yu Xinxi Jishu, 2016 With the improvement of packaging power level of IGBT module, power density and operating temperature on chip will rise, which may lead to an increasing affect of thermal stress on long-term reliability of the device.
XIAO Hongxiu, DOU Zechun, PENG Yongdian
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