Results 11 to 20 of about 13,721,918 (142)
Mechanical Stress Analysis in High Power Press Pack IGBT
Zhongguo dianli, 2020 Mechanical stress is one of the key factors affecting the electrical characteristics, thermal characteristics and reliability of high-voltage high-power press-pack IGBT devices.
Xinling TANG +7 more
doaj +2 more sources
The Journal of Engineering, 2019 Press-pack insulated gate bipolar transistor (IGBT) device is the key component in the voltage source converter high voltage direct current (VSC-HVDC) due the advantage of the short-circuit failure.
Ran Yao +9 more
doaj +2 more sources
Reliability study and modelling of IGBT press-pack power modules
2017 IEEE Applied Power Electronics Conference and Exposition (APEC), 2017 The IGBT press-pack provides low inductance and simple module stack for high power and high voltage applications. In this work, the reliability of IGBT Press-Pack power modules is experimentally tested under RBSOA conditions to investigate their limitation and current scalability.
Long, H.Y. +3 more
openaire +3 more sources
Accelerate Aging Test Method for Press-Pack IGBT Power Module
Zhongguo dianli, 2022 Since reliability test of Press-pack IGBT (PPI) still not been researched enough, based on its application in industry, A cycle aging test methods aimed at VSC-HVDC power unit are proposed.
Biaojun LI +3 more
doaj +2 more sources
High Power Press-pack IGBT and Its Application in Pulsed Magnetic-field Generator
Kongzhi Yu Xinxi Jishu, 2017 In some special field of high voltage and high current, the application of conventional IGBT will increase the complexity of system structure and difficulties of control. Therefore, this paper introduced a new type of power press-pack IGBT device.
CHEN Jun +3 more
doaj +2 more sources
Thermal Design and Simulation of High Power Press-pack IGBT Module
Kongzhi Yu Xinxi Jishu, 2016 With the improvement of packaging power level of IGBT module, power density and operating temperature on chip will rise, which may lead to an increasing affect of thermal stress on long-term reliability of the device.
XIAO Hongxiu, DOU Zechun, PENG Yongdian
doaj +2 more sources
CSEE Journal of Power and Energy SystemsIn a press-pack insulated gate bipolar transistor (IGBT), a compact packaging structure forms a strong electromagnetic coupling, thermal coupling, and stress coupling, threatening current sharing, temperature sharing, and stress sharing of paralleled ...
Lubin Han, Lin Liang, Yong Kang
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Research on the Press-pack IGBT with High SCSOA
Kongzhi Yu Xinxi Jishu, 2017 DC breaker is one of the main equipment of HVDC system converter station. As an essential component of DC breaker, the electrical performance and reliability of the press-pack IGBT (insulated gate bipolar transistor) are particularly important.
LENG Guoqing +5 more
doaj +2 more sources
Inductance extraction of Press-Pack IGBT by Considering Displacement Current
E3S Web of Conferences, 2018 Taking the displacement current generated by charges accumulation into consideration, this paper presents a inductance extraction method for press-pack IGBT where conductor might not form a closed loop in simulation.
Li Jinyuan +4 more
doaj +3 more sources
Design and Key Technologies of High-power Press-pack IGBT Device
Kongzhi Yu Xinxi Jishu, 2016 It presented the advantages of high-power press-pack IGBT device with respect to conventional soldering device. In the aspect of device design, insulation and blocking failure mechanism were analyzed as well as optimized solution which increasing the ...
DOU Zechun +5 more
doaj +2 more sources