Results 11 to 20 of about 139 (129)

Thermal Load Application Method for Temperature Cycle Test of Power Module PP-IGBT

open access: yesZhongguo dianli, 2023
Temperature cycling test is an important test method to study the thermal fatigue aging characteristics of power module press pack insulated gate bipolar transistor (PP-IGBT) devices. Therefore, taking the PP-IGBT of flexible direct converter valve power
Biaojun LI   +3 more
doaj   +1 more source

A Review of Thermal Design for IGBT Module

open access: yesZhongguo dianli, 2020
In this paper, the thermal characteristics and thermal design of IGBT module are reviewed. Firstly, the thermal network model and its dependence on the packaging material’s thermal performance and dimensions are addressed.
Guoyou LIU   +5 more
doaj   +1 more source

Time-Variant Reliability Optimization for Stress Balance in Press-Pack Insulated Gate Bipolar Transistors

open access: yesIEEE Access, 2023
Stress imbalance significantly affects the performance of a press-pack insulated gate bipolar transistor (IGBT). Time-variant loads and conditions lead to the stress fluctuations, exacerbating the impacts.
Hangyang Li   +6 more
doaj   +1 more source

Modelling and analysis on short-circuit failure for press-pack IGBT devices used in VSC-HVDC converter

open access: yesThe Journal of Engineering, 2019
Press-pack insulated gate bipolar transistor (IGBT) device is the key component in the voltage source converter high voltage direct current (VSC-HVDC) due the advantage of the short-circuit failure.
Ran Yao   +9 more
doaj   +1 more source

Mechanical Stress Analysis in High Power Press Pack IGBT

open access: yesZhongguo dianli, 2020
Mechanical stress is one of the key factors affecting the electrical characteristics, thermal characteristics and reliability of high-voltage high-power press-pack IGBT devices.
Xinling TANG   +7 more
doaj   +1 more source

Accelerate Aging Test Method for Press-Pack IGBT Power Module

open access: yesZhongguo dianli, 2022
Since reliability test of Press-pack IGBT (PPI) still not been researched enough, based on its application in industry, A cycle aging test methods aimed at VSC-HVDC power unit are proposed.
Biaojun LI   +3 more
doaj   +1 more source

Press-pack IGBTs for HVDC and FACTs

open access: yesCSEE Journal of Power and Energy Systems, 2017
The popularity of insulated gate bipolar transistors (IGBTs) for use in high-voltage direct current (HVDC) transmission and flexible AC transmission systems (FACTS) is increasing. Unfortunately, for these applications wire-bond IGBT technology has a number of shortcomings, such as insufficient current ratings for the most powerful schemes, and ...
Robin Simpson   +5 more
openaire   +1 more source

Cryogenic Power Electronics: Press-Pack IGBT Modules [PDF]

open access: yesIOP Conference Series: Materials Science and Engineering, 2020
Abstract With the goal of enabling high-power-density cryogenic power converter technology and superconducting power applications for future aircraft and shipboard power systems, the dynamic and static performances of a press-pack IGBT module (T0160NB45A) at ambient and cryogenic conditions are reported. Compared to the wire-bond IGBT’s,
C Park   +5 more
openaire   +1 more source

Fault-tolerant design approach for reliable offshore multi-megawatt variable frequency converters

open access: yesJournal of Ocean Engineering and Science, 2016
Inverters play a key role in realizing reliable multi-megawatt power electronic converters used in offshore applications, as their failure leads to production losses and impairs safety.
N. Vedachalam   +2 more
doaj   +1 more source

Overview of monitoring methods of press‐pack insulated gate bipolar transistor modules under different package failure modes

open access: yesIET Power Electronics, 2023
Press‐pack insulated gate bipolar transistor modules (PP‐IGBTs) have been widely used in high‐voltage and high‐power‐density applications, such as high‐voltage direct‐current (HVDC) converters, because of their advantages of low thermal resistance ...
Renkuan Liu   +5 more
doaj   +1 more source

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