Results 1 to 10 of about 74 (72)
Energies, 2019 In this paper, the impact of a double-sided press-pack insulated-gate-bipolar-transistor (PP IGBT) cooling structure on its thermal impedance distribution is studied and explored. A matrix thermal impedance network model is built by considering the multi-
Yao Chang +6 more
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Research on Long-term Reliability of Silver Sintered Press-Pack IGBT Modules
Power Electronic Devices and Components, 2022 Owing to the advantages of short-circuit failure mode, double-sided heat dissipation, and low thermal resistance, press-pack insulated gate bipolar transistors (PP-IGBTs) are widely used in high-power-density applications, such as high-voltage direct ...
Renkuan Liu +8 more
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Review on Failure Mode and Mechanism of Press-Pack IGBT and Thyristor Devices
Zhongguo dianli, 2023 High voltage and large capacity press-pack insulated gate bipolar transistor (IGBT) devices and thyristor devices are the core devices in high-voltage DC transmission projects, which are of great significance for the efficient use of energy.
Haoze LUO +5 more
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Thermal Resistance Distribution Experiment of Parallel Sub-Module in Press-Pack IGBT Device
Zhongguo dianli, 2020 In the rigid Press-Pack IGBT module, the pressure distribution of parallel chips determines the contact thermal resistance and contact electrical resistance directly.
Lubin HAN, Lin LIANG, Yong KANG
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Performance limits of high voltage press-pack SiC IGBT and SiC MOSFET devices
Power Electronic Devices and Components, 2022 Considering the switching frequency limit and electromagnetic interference, the selection of high voltage SiC IGBT and SiC MOSFET is confusing due to punch-through effect and bipolar characteristics of SiC IGBT.
Lubin Han +4 more
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Influence of UnevenTemperature on Current Distribution in Paralleled Multi-Chips Press Pack IGBT
Zhongguo dianli, 2020 The multi-chip parallel press pack IGBT device is a key component in flexible DC transmission equipment. Due to manufacturing processes, loop parasitic parameters and thermal coupling, the internal stress distribution of the device is imbalance ...
Zhenyu DENG +6 more
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Thermal Load Application Method for Temperature Cycle Test of Power Module PP-IGBT
Zhongguo dianli, 2023 Temperature cycling test is an important test method to study the thermal fatigue aging characteristics of power module press pack insulated gate bipolar transistor (PP-IGBT) devices. Therefore, taking the PP-IGBT of flexible direct converter valve power
Biaojun LI +3 more
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A Review of Thermal Design for IGBT Module
Zhongguo dianli, 2020 In this paper, the thermal characteristics and thermal design of IGBT module are reviewed. Firstly, the thermal network model and its dependence on the packaging material’s thermal performance and dimensions are addressed.
Guoyou LIU +5 more
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IEEE Access, 2023 Stress imbalance significantly affects the performance of a press-pack insulated gate bipolar transistor (IGBT). Time-variant loads and conditions lead to the stress fluctuations, exacerbating the impacts.
Hangyang Li +6 more
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The Journal of Engineering, 2019 Press-pack insulated gate bipolar transistor (IGBT) device is the key component in the voltage source converter high voltage direct current (VSC-HVDC) due the advantage of the short-circuit failure.
Ran Yao +9 more
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