Results 11 to 20 of about 4,301 (207)
Energies, 2019 In this paper, the impact of a double-sided press-pack insulated-gate-bipolar-transistor (PP IGBT) cooling structure on its thermal impedance distribution is studied and explored. A matrix thermal impedance network model is built by considering the multi-
Yao Chang +6 more
doaj +3 more sources
CSEE Journal of Power and Energy SystemsIn a press-pack insulated gate bipolar transistor (IGBT), a compact packaging structure forms a strong electromagnetic coupling, thermal coupling, and stress coupling, threatening current sharing, temperature sharing, and stress sharing of paralleled ...
Lubin Han, Lin Liang, Yong Kang
doaj +2 more sources
IET Power ElectronicsThe high‐power press‐pack insulate gate bipolar transistor (IGBT) is the core device of a high‐voltage converter. The current sharing and aging characteristics of many parallel chips in IGBT are critical issues regarding its operational reliability.
Litong Wang +5 more
doaj +2 more sources
3D Lumped Thermal Model for Compliant Press‐Pack IGBT Submodule in MMC
IET Power Electronics, Volume 19, Issue 1, January/December 2026.We present a 3D lumped thermal model for compliant press‐pack IGBT submodules in MMCs. The model accounts for double‐sided cooling and thermal coupling, achieving high accuracy and efficiency, making it suitable for real‐time condition monitoring. ABSTRACT The compliant press‐pack IGBT is widely used in modular multilevel converters (MMCs).
Shuguo Gao +5 more
wiley +2 more sources
Cryogenic Power Electronics: Press-Pack IGBT Modules [PDF]
IOP Conference Series: Materials Science and Engineering, 2020 Abstract With the goal of enabling high-power-density cryogenic power converter technology and superconducting power applications for future aircraft and shipboard power systems, the dynamic and static performances of a press-pack IGBT module (T0160NB45A) at ambient and cryogenic conditions are reported. Compared to the wire-bond IGBT’s,
C Park +5 more
openaire +1 more source
Thermal Resistance Distribution Experiment of Parallel Sub-Module in Press-Pack IGBT Device
Zhongguo dianli, 2020 In the rigid Press-Pack IGBT module, the pressure distribution of parallel chips determines the contact thermal resistance and contact electrical resistance directly.
Lubin HAN, Lin LIANG, Yong KANG
doaj +1 more source
Performance limits of high voltage press-pack SiC IGBT and SiC MOSFET devices
Power Electronic Devices and Components, 2022 Considering the switching frequency limit and electromagnetic interference, the selection of high voltage SiC IGBT and SiC MOSFET is confusing due to punch-through effect and bipolar characteristics of SiC IGBT.
Lubin Han +4 more
doaj +1 more source
Influence of UnevenTemperature on Current Distribution in Paralleled Multi-Chips Press Pack IGBT
Zhongguo dianli, 2020 The multi-chip parallel press pack IGBT device is a key component in flexible DC transmission equipment. Due to manufacturing processes, loop parasitic parameters and thermal coupling, the internal stress distribution of the device is imbalance ...
Zhenyu DENG +6 more
doaj +1 more source
IEEE transactions on industry applications, 2022 In this article, a fully coupled multiphysical model of multichip press-pack insulated gate bipolar transistor (PPI) considering surface roughness is proposed.
C. Zhan +7 more
semanticscholar +1 more source
Thermal Load Application Method for Temperature Cycle Test of Power Module PP-IGBT
Zhongguo dianli, 2023 Temperature cycling test is an important test method to study the thermal fatigue aging characteristics of power module press pack insulated gate bipolar transistor (PP-IGBT) devices. Therefore, taking the PP-IGBT of flexible direct converter valve power
Biaojun LI +3 more
doaj +1 more source