Results 11 to 20 of about 17,691,121 (147)

Review on Failure Mode and Mechanism of Press-Pack IGBT and Thyristor Devices

open access: yesZhongguo dianli, 2023
High voltage and large capacity press-pack insulated gate bipolar transistor (IGBT) devices and thyristor devices are the core devices in high-voltage DC transmission projects, which are of great significance for the efficient use of energy.
Haoze LUO   +5 more
doaj   +2 more sources

Thermal Resistance Distribution Experiment of Parallel Sub-Module in Press-Pack IGBT Device

open access: yesZhongguo dianli, 2020
In the rigid Press-Pack IGBT module, the pressure distribution of parallel chips determines the contact thermal resistance and contact electrical resistance directly.
Lubin HAN, Lin LIANG, Yong KANG
doaj   +2 more sources

Modelling and analysis on short-circuit failure for press-pack IGBT devices used in VSC-HVDC converter

open access: yesThe Journal of Engineering, 2019
Press-pack insulated gate bipolar transistor (IGBT) device is the key component in the voltage source converter high voltage direct current (VSC-HVDC) due the advantage of the short-circuit failure.
Ran Yao   +9 more
doaj   +2 more sources

Mechanical Stress Analysis in High Power Press Pack IGBT

open access: yesZhongguo dianli, 2020
Mechanical stress is one of the key factors affecting the electrical characteristics, thermal characteristics and reliability of high-voltage high-power press-pack IGBT devices.
Xinling TANG   +7 more
doaj   +2 more sources

Accelerate Aging Test Method for Press-Pack IGBT Power Module

open access: yesZhongguo dianli, 2022
Since reliability test of Press-pack IGBT (PPI) still not been researched enough, based on its application in industry, A cycle aging test methods aimed at VSC-HVDC power unit are proposed.
Biaojun LI   +3 more
doaj   +2 more sources

High Power Press-pack IGBT and Its Application in Pulsed Magnetic-field Generator

open access: yesKongzhi Yu Xinxi Jishu, 2017
In some special field of high voltage and high current, the application of conventional IGBT will increase the complexity of system structure and difficulties of control. Therefore, this paper introduced a new type of power press-pack IGBT device.
CHEN Jun   +3 more
doaj   +2 more sources

Influence of UnevenTemperature on Current Distribution in Paralleled Multi-Chips Press Pack IGBT

open access: yesZhongguo dianli, 2020
The multi-chip parallel press pack IGBT device is a key component in flexible DC transmission equipment. Due to manufacturing processes, loop parasitic parameters and thermal coupling, the internal stress distribution of the device is imbalance ...
Zhenyu DENG   +6 more
doaj   +2 more sources

A Review of Thermal Design for IGBT Module

open access: yesZhongguo dianli, 2020
In this paper, the thermal characteristics and thermal design of IGBT module are reviewed. Firstly, the thermal network model and its dependence on the packaging material’s thermal performance and dimensions are addressed.
Guoyou LIU   +5 more
doaj   +2 more sources

Optimized Design in Current, Temperature and Stress Distributions for Paralleled Chips in Press-Pack IGBT Modules

open access: yesCSEE Journal of Power and Energy Systems
In a press-pack insulated gate bipolar transistor (IGBT), a compact packaging structure forms a strong electromagnetic coupling, thermal coupling, and stress coupling, threatening current sharing, temperature sharing, and stress sharing of paralleled ...
Lubin Han, Lin Liang, Yong Kang
doaj   +2 more sources

Thermal Design and Simulation of High Power Press-pack IGBT Module

open access: yesKongzhi Yu Xinxi Jishu, 2016
With the improvement of packaging power level of IGBT module, power density and operating temperature on chip will rise, which may lead to an increasing affect of thermal stress on long-term reliability of the device.
XIAO Hongxiu, DOU Zechun, PENG Yongdian
doaj   +2 more sources

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