Results 21 to 30 of about 17,691,121 (147)

Research on the Press-pack IGBT with High SCSOA

open access: yesKongzhi Yu Xinxi Jishu, 2017
DC breaker is one of the main equipment of HVDC system converter station. As an essential component of DC breaker, the electrical performance and reliability of the press-pack IGBT (insulated gate bipolar transistor) are particularly important.
LENG Guoqing   +5 more
doaj   +2 more sources

Inductance extraction of Press-Pack IGBT by Considering Displacement Current

open access: yesE3S Web of Conferences, 2018
Taking the displacement current generated by charges accumulation into consideration, this paper presents a inductance extraction method for press-pack IGBT where conductor might not form a closed loop in simulation.
Li Jinyuan   +4 more
doaj   +3 more sources

Time-Variant Reliability Optimization for Stress Balance in Press-Pack Insulated Gate Bipolar Transistors

open access: yesIEEE Access, 2023
Stress imbalance significantly affects the performance of a press-pack insulated gate bipolar transistor (IGBT). Time-variant loads and conditions lead to the stress fluctuations, exacerbating the impacts.
Hangyang Li   +6 more
doaj   +2 more sources

Thermal Load Application Method for Temperature Cycle Test of Power Module PP-IGBT

open access: yesZhongguo dianli, 2023
Temperature cycling test is an important test method to study the thermal fatigue aging characteristics of power module press pack insulated gate bipolar transistor (PP-IGBT) devices. Therefore, taking the PP-IGBT of flexible direct converter valve power
Biaojun LI   +3 more
doaj   +2 more sources

Design and Key Technologies of High-power Press-pack IGBT Device

open access: yesKongzhi Yu Xinxi Jishu, 2016
It presented the advantages of high-power press-pack IGBT device with respect to conventional soldering device. In the aspect of device design, insulation and blocking failure mechanism were analyzed as well as optimized solution which increasing the ...
DOU Zechun   +5 more
doaj   +2 more sources

Integrated Rogowski Coil Sensor for Press-Pack Insulated Gate Bipolar Transistor Chips. [PDF]

open access: yesSensors (Basel), 2020
Recently, the press-pack insulated gate bipolar transistor (IGBT) has usually been used in direct current (DC) transmission. The press-pack IGBT (PPI) adopts a parallel layout of boss chips, and the currents of each chip will be uneven in the process of ...
Jiao C, Zhang Z, Zhao Z, Zhang X.
europepmc   +2 more sources

Power Cycle Testing of Press-Pack IGBT Chips [PDF]

open access: yes, 2014
In this thesis the power cycling capability of individual press-pack IGBT chips is investigated. Press-pack is a packaging technology used for power semiconductors. For press-packs, both thermal and electrical contact to the semiconductor chip is obtained by the application of force on the package. Press-pack IGBTs is claimed by the manufacturers to be
Frank, Øyvind Bjerke
core   +4 more sources

Performance limits of high voltage press-pack SiC IGBT and SiC MOSFET devices

open access: yesPower Electronic Devices and Components, 2022
Considering the switching frequency limit and electromagnetic interference, the selection of high voltage SiC IGBT and SiC MOSFET is confusing due to punch-through effect and bipolar characteristics of SiC IGBT.
Lubin Han   +4 more
doaj   +1 more source

Short-Circuit Capability Optimization of Press-Pack IGBT by Improving Active Edge Heat Dissipation

open access: yes, 2023
Press-pack insulated gate bipolar transistor (PP-IGBT) device has been widely used in VSC-HVdc converters. Research on the optimization method of short-circuit capability is crucial to improve the short-circuit robustness and reliability of PP-IGBT ...
Francesco Iannuzzo   +11 more
core   +1 more source

Deformation analysis of Press-pack IGBT using thermal mechanical coupling method [PDF]

open access: yes, 2022
Press-pack Insulated Gate Bipolar Transistors (PP IGBT) are becoming increasingly used in HVDC and FACT applications. Due to its unique packaging, its reliability issues have also attracted increasing attention in the engineering field.
Dai, Siyang   +5 more
core   +1 more source

Home - About - Disclaimer - Privacy