Results 1 to 10 of about 139 (129)
Electric Field Analysis of Press-Pack IGBTs [PDF]
E3S Web of Conferences, 2018 High voltage IGBT module is the ideal option for the VSC-HVDC power transmission application. At present, wire-bonded technology and press-pack technology are available packaging technologies for high voltage IGBT.
Xinling Tang +4 more
doaj +2 more sources
Integrated Rogowski Coil Sensor for Press-Pack Insulated Gate Bipolar Transistor Chips [PDF]
Sensors, 2020 Recently, the press-pack insulated gate bipolar transistor (IGBT) has usually been used in direct current (DC) transmission. The press-pack IGBT (PPI) adopts a parallel layout of boss chips, and the currents of each chip will be uneven in the process of ...
Chaoqun Jiao +3 more
doaj +2 more sources
Energies, 2019 In this paper, the impact of a double-sided press-pack insulated-gate-bipolar-transistor (PP IGBT) cooling structure on its thermal impedance distribution is studied and explored. A matrix thermal impedance network model is built by considering the multi-
Yao Chang +6 more
doaj +3 more sources
Research on Long-term Reliability of Silver Sintered Press-Pack IGBT Modules
Power Electronic Devices and Components, 2022 Owing to the advantages of short-circuit failure mode, double-sided heat dissipation, and low thermal resistance, press-pack insulated gate bipolar transistors (PP-IGBTs) are widely used in high-power-density applications, such as high-voltage direct ...
Renkuan Liu +8 more
doaj +3 more sources
Application of Silver Sintering Technology in Press-pack IGBTs
机车电传动, 2021 Silver sintering technology which has the characteristics of low temperature connection, low thermal resistance, low stress and high melting point, has gradually become the application trend of interface reliability-connection in insulated gate bipolar ...
Tingchang SHI +5 more
doaj +1 more source
Study of Thermal Characteristics on Press-pack IGBT Modules
机车电传动, 2013 Thermal characteristics of press-pack IGBT modules were studied by utilizing three kinds of approaches. The thermal model was constructed, and static thermal resistance was analyzed by computation and finite-element simulation, as well as experimental ...
DOU Ze-chun +5 more
doaj +1 more source
Review on Failure Mode and Mechanism of Press-Pack IGBT and Thyristor Devices
Zhongguo dianli, 2023 High voltage and large capacity press-pack insulated gate bipolar transistor (IGBT) devices and thyristor devices are the core devices in high-voltage DC transmission projects, which are of great significance for the efficient use of energy.
Haoze LUO +5 more
doaj +1 more source
Thermal Resistance Distribution Experiment of Parallel Sub-Module in Press-Pack IGBT Device
Zhongguo dianli, 2020 In the rigid Press-Pack IGBT module, the pressure distribution of parallel chips determines the contact thermal resistance and contact electrical resistance directly.
Lubin HAN, Lin LIANG, Yong KANG
doaj +1 more source
Performance limits of high voltage press-pack SiC IGBT and SiC MOSFET devices
Power Electronic Devices and Components, 2022 Considering the switching frequency limit and electromagnetic interference, the selection of high voltage SiC IGBT and SiC MOSFET is confusing due to punch-through effect and bipolar characteristics of SiC IGBT.
Lubin Han +4 more
doaj +1 more source
Influence of UnevenTemperature on Current Distribution in Paralleled Multi-Chips Press Pack IGBT
Zhongguo dianli, 2020 The multi-chip parallel press pack IGBT device is a key component in flexible DC transmission equipment. Due to manufacturing processes, loop parasitic parameters and thermal coupling, the internal stress distribution of the device is imbalance ...
Zhenyu DENG +6 more
doaj +1 more source