Results 11 to 20 of about 2,624 (204)

A Universal PCB Rogowski Coils Turns Arrangement Method for Anti‐Interference From Adjacent Conductors in Press‐Pack IGBT [PDF]

open access: goldIET Power Electronics
The high‐power press‐pack insulate gate bipolar transistor (IGBT) is the core device of a high‐voltage converter. The current sharing and aging characteristics of many parallel chips in IGBT are critical issues regarding its operational reliability.
Litong Wang   +5 more
doaj   +3 more sources

Modelling and analysis on short-circuit failure for press-pack IGBT devices used in VSC-HVDC converter

open access: goldThe Journal of Engineering, 2019
Press-pack insulated gate bipolar transistor (IGBT) device is the key component in the voltage source converter high voltage direct current (VSC-HVDC) due the advantage of the short-circuit failure.
Ran Yao   +9 more
doaj   +2 more sources

Optimized Design in Current, Temperature and Stress Distributions for Paralleled Chips in Press-Pack IGBT Modules

open access: diamondCSEE Journal of Power and Energy Systems
In a press-pack insulated gate bipolar transistor (IGBT), a compact packaging structure forms a strong electromagnetic coupling, thermal coupling, and stress coupling, threatening current sharing, temperature sharing, and stress sharing of paralleled ...
Lubin Han, Lin Liang, Yong Kang
doaj   +2 more sources

Research on Long-term Reliability of Silver Sintered Press-Pack IGBT Modules

open access: goldPower Electronic Devices and Components, 2022
Owing to the advantages of short-circuit failure mode, double-sided heat dissipation, and low thermal resistance, press-pack insulated gate bipolar transistors (PP-IGBTs) are widely used in high-power-density applications, such as high-voltage direct ...
Renkuan Liu   +8 more
doaj   +2 more sources

Mechanical Stress Analysis in High Power Press Pack IGBT

open access: yesZhongguo dianli, 2020
Mechanical stress is one of the key factors affecting the electrical characteristics, thermal characteristics and reliability of high-voltage high-power press-pack IGBT devices.
Xinling TANG   +7 more
doaj   +2 more sources

Application of Silver Sintering Technology in Press-pack IGBTs

open access: yes机车电传动, 2021
Silver sintering technology which has the characteristics of low temperature connection, low thermal resistance, low stress and high melting point, has gradually become the application trend of interface reliability-connection in insulated gate bipolar ...
Tingchang SHI   +5 more
doaj   +1 more source

Reliability modelling and analysis on MMC for VSC-HVDC by considering the press-pack IGBT and capacitors failure

open access: goldThe Journal of Engineering, 2019
Modular multi-level converter (MMC) with press-packing IGBT devices is the popular and key equipment of VSC-HVDC system, its reliability is directly related to the equipment safe operation.
Li Hui   +6 more
doaj   +2 more sources

Influence of the clamping force on the power cycling lifetime reliability of press pack IGBT sub-module

open access: goldThe Journal of Engineering, 2019
The clamping force is the most important parameter of Press Pack IGBTs (PP IGBTs) as it not only affects the electrical, thermal, and mechanical characteristic, but also the long lifetime reliability.
Erping Deng   +5 more
doaj   +2 more sources

Accelerate Aging Test Method for Press-Pack IGBT Power Module

open access: yesZhongguo dianli, 2022
Since reliability test of Press-pack IGBT (PPI) still not been researched enough, based on its application in industry, A cycle aging test methods aimed at VSC-HVDC power unit are proposed.
Biaojun LI   +3 more
doaj   +2 more sources

Study of Thermal Characteristics on Press-pack IGBT Modules

open access: yes机车电传动, 2013
Thermal characteristics of press-pack IGBT modules were studied by utilizing three kinds of approaches. The thermal model was constructed, and static thermal resistance was analyzed by computation and finite-element simulation, as well as experimental ...
DOU Ze-chun   +5 more
doaj   +1 more source

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