Results 21 to 30 of about 5,062,277 (278)
Robust Offset-Cancellation Sensing-Circuit-Based Spin-Transfer-Torque Nonvolatile Flip-Flop
IEEE Access, 2020 Nonvolatile flip-flop (NV-FF) based systems can be effectively implemented in battery-limited internet of things (IoT) applications due to their zero standby power consumption and instant ON/OFF characteristics. Among various NV-FFs, spin-transfer-torque
Taehui Na
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Time to Digital Sensing for Multilevel RRAM Cells
IEEE Access, 2021 Memristors offer the possibility of implementing multilevel cells in Resistive RAMs providing high-density non-volatile data storage solutions. However the writing and reading processes when these devices are integrated into a crossbar is a problem that ...
Amadeo Gracia De Herranz +1 more
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Variational sums for additive processes [PDF]
Proceedings of the American Mathematical Society, 1976 Let X ( t ) , 0 ≦ t ≦ T X(t),0 \leqq t \leqq T , be an additive process, and let X n k {X_{nk}} be the k k th increment of X ( t )
Hudson, William N., Mason, J. David
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Ultra-Low Power Oscillator Collapse Physical Unclonable Function Based on FinFET
IEEE Access, 2021 The main purpose of this paper is to achieve ultra-low power Physical Unclonable Function (PUF) to meet the requirements for Internet of Things (IoT) applications.
Amin A. Zayed +3 more
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Simulation of between repeat variability in real time PCR reactions [PDF]
, 2012 While many decisions rely on real time quantitative PCR (qPCR) analysis few attempts have hitherto been made to quantify bounds of precision accounting for the various sources of variation involved in the measurement process.
Goetghebeur, Els +3 more
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IEEE Access, 2022 Design-space exploration for low-power manycore design is a daunting and time-consuming task which requires some complex tools and frameworks to achieve. In the presence of process variation, the problem becomes even more challenging, especially the time
Sohaib Majzoub +4 more
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Stabilization of multiple resistance levels by current-sweep in SiOx-based resistive switching memory [PDF]
, 2015 Using current-sweep measurements, the set process in SiOx-based resistive random access memory (RRAM) has been found to consist of multiple resistance-reduction steps.
Byun, Kwangsub +4 more
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IEEE Access, 2022 NAND flash memory is becoming smaller and denser to have a larger storage capacity as technologies related to fine processes are developed. As a side effect of high-density integration, the memory can be vulnerable to circuit-level noise such as random ...
Minyoung Hwang +5 more
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Compensation for Uneven Surfaces When Building Laser Deposited Structures [PDF]
, 2004 Direct Laser Deposition (DLD) is a blown-powder laser deposition process that can be used to quickly produce, modify or repair fully-dense metallic parts by a layered manufacturing method. However, uneven substrate surfaces often cause variation in the
Fearon, E., Watkins, K. G.
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Hybrid Gate-Level Leakage Model for Monte Carlo Analysis on Multiple GPUs
IEEE Access, 2014 This paper proposes a hybrid gate-level leakage model for the use with the Monte Carlo (MC) analysis approach, which combines a lookup table (LUT) model with a first-order exponential-polynomial model (first-order model, herein).
Jinwook Kim, Young Hwan Kim
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