Results 251 to 260 of about 489,904 (300)

Design of a SiC MOSFET Gate Driver Chip Based on Adaptive Active Drive Technology. [PDF]

open access: yesMicromachines (Basel)
Li Q   +8 more
europepmc   +1 more source

An experimental investigation of unique high stepup boost converter for electric vehicle and solar photovoltaic.

open access: yesSci Rep
Mariprasath T   +7 more
europepmc   +1 more source

High-Resolution MEMS Inclinometer Based on Pull-In Voltage

open access: yesJournal of Microelectromechanical Systems, 2015
High-resolution pull-in-based microelectromechanical system (MEMS) inclinometers are presented in this paper. Pull-in is characterized by the sudden loss of stability in electrostatically actuated parallel-plate structures, and since pull-in voltage is stable and easy to measure, it enables an effective transduction mechanism that does not require ...
Filipe Serra Alves   +2 more
exaly   +4 more sources

Micromechanical voltage reference using the pull-in of a beam

IEEE Transactions on Instrumentation and Measurement, 2001
The pull-in voltage of a single-side anchored freestanding beam, under lateral deflection, has been investigated for application as a DC voltage reference. Two sets of electrodes, along side the tip, are used for parallel-plate type of electrostatic actuation of the 200 /spl mu/m long beam in the plane of the wafer.
E Cretu, L A Rocha, R F Wolffenbuttel
exaly   +3 more sources

Pull-in Voltage of Electrostatically-Actuated Microbeams in Terms of Lumped Model Pull-in Voltage Using Novel Design Corrective Coefficients

Sensing and Imaging, 2011
In this paper, we present a study of the static and dynamic responses of a fixed–fixed and cantilever microbeam (using both the lumped and the distributed models) to a DC and a step DC voltage. A Galerkin-based step by step linearization method and a Galerkin-based reduced order model have been used to solve the governing static and dynamic equations ...
Ghader Rezazadeh   +2 more
exaly   +2 more sources

Compensation of temperature effects on the pull-in voltage of microstructures

Sensors and Actuators A: Physical, 2004
Abstract The pull-in voltage of a suspended microstructure has been investigated for use as on-chip voltage reference in a compatible MEMS-IC process. Pull-in is detected using capacitive displacement measurement. The stability is affected by an initial parasitic charge build-up and a temperature sensitivity of −149 μV/K.
L A Rocha, E Cretu, R F Wolffenbuttel
exaly   +2 more sources

Optimal Design of an Electrostatically Actuated Micro-Beam for Maximum Pull-In Voltage

open access: yes44th AIAA/ASME/ASCE/AHS/ASC Structures, Structural Dynamics, and Materials Conference, 2003
We consider optimizing the shape of a capacitive micro-beam for maximum pull-in voltage. The problem is discretized using finite elements. The normal flow algorithm is used to trace the nonlinear voltage displacement curve and find the pull-in point. Optimal width and thickness distributions are obtained for different beam boundary conditions using a ...
Mostafa M. Abdalla   +3 more
openaire   +2 more sources

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