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PUSH-PULL VOLTAGE BUFFER DEVICES ON BIPOLAR TRANSISTORS
Herald of Khmelnytskyi National University. Technical sciences, 2022The article proposes linear push-pull buffer devices on bipolar transistors. A highly linear push-pull voltage buffer device with parametric zero shift compensation is considered. A variant of the construction of a highly linear push-pull voltage buffer device on bipolar transistors with a minimum value of the input current is proposed.
Olexiy AZAROV, Оlexiy STAKHOV
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Control of the output transistors gating voltage for high voltage push-pull pulser
Instruments and Experimental Techniques, 2016The schematic design is proposed to control the output of high voltage MOSFET switches of a push-pull high voltage pulser for mass spectrometry applications. The design provides a way to form symmetrical opening and closing gating pulses for the output MOSFET transistors.
V. V. Filatov +3 more
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A Class of RF-MEMS Switches with Low Pull-In Voltage
Journal of Circuits, Systems and ComputersThis paper presents a class comprising three series of Ohmic switches, elucidating their design principles, simulation outcomes and the findings derived from measuring the initial batch of manufactured samples. The design of the membranes employs meandered beams to achieve a small actuation voltage.
Tagliapietra, Girolamo, Iannacci, Jacopo
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Dynamic voltage restorer using push-pull inverter
2011 2nd Power Electronics, Drive Systems and Technologies Conference, 2011Proliferation of the voltage-sensitive loads in the distribution systems has made the voltage quality an important issue. The main factors considering the voltage quality are the voltage sags and voltage swells. There are many available solutions to improve voltage quality.
Mohammad Farhadi Kangarlu +2 more
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Effect of stress on the pull-in voltage of membranes for MEMS application
Journal of Micromechanics and Microengineering, 2009In this work, the effect of process residual stress has been studied on three different designs of membranes for RF MEMS switch application. Expressions for the pull-in voltage of stressed membranes have been developed by simple modification of existing relation for unstressed membranes.
Jaibir Sharma, Amitava DasGupta
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Analytical investigation of the pull-in voltage in capacitive mechanical sensors
SPIE Proceedings, 2011A MEMS capacitive sensor is basically an electrostatic transducer and an analytical approach to evaluate the pull-in voltage associated with a clamped circular plate or a circular membrane due to a bias voltage is presented. The approach is based on a linearized uniform approximation of the nonlinear electrostatic force due to a bias voltage and the ...
J. Lardiès +2 more
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Pull-In Voltage Calculations for-MEMS Sensors with Cantilevered Beams
The 3rd International IEEE-NEWCAS Conference, 2005., 2005MEMS sensors, such as acoustic, noise and vibration transducers often employ a diaphragm or cantilevered structure as part of a variable capacitance sensor geometry. A bias voltage is necessary to ensure a linear force-capacitance range of operation.
S. Chowdhury, M. Ahmadi, W.C. Miller
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Improvement of pull-in voltage of electromechanical microbeams using topology optimization
2008The electrostatic actuation devices used in MEMS are generally based on capacitive systems in which one electrode is mobile and the other one is fixed. Applying voltage between the electrodes generates an electrostatic force which tends to reduce the gap between the electrodes.
Lemaire, Etienne +3 more
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Frequency pulling in a low-voltage medium-power gyrotron
Physics of Plasmas, 2018Many recent biomedical applications use medium-power frequency-tunable terahertz (THz) sources, such as sensitivity-enhanced nuclear magnetic resonance, THz imaging, and biomedical treatment. As a promising candidate, a low-voltage gyrotron can generate watt-level, continuous THz-wave radiation. In particular, the frequency-pulling effect in a gyrotron,
Li Luo +3 more
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The determination of the pull-in voltage from the condition of bridge stability
International Journal of Nanomanufacturing, 2010An analytical expression for the pull-in voltage is deduced for an RF micro-electromechanical system (MEMS) switch, by tacking into account the presence of a dielectric layer deposited on the coplanar waveguide. The model allows investigation of the influence of the dielectric permittivity and the geometry of the device on the displacement d of the ...
E.R. Neagu +4 more
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