Results 191 to 200 of about 164,680 (351)

‘Oxygen Bound to Magnesium’ as High Voltage Redox Center Causes Sloping of the Potential Profile in Mg‐Doped Layered Oxides for Na‐Ion Batteries

open access: yesAdvanced Functional Materials, EarlyView.
Na‐ion batteries ‐ Impact of doping on the oxygen redox: The sloping potential of NaMg0.1Ni0.4Mn0.5O2 above 4.0 V is caused by a new redox center (arising from the ‘O bound to Mg’), having a higher potential but being more irreversible compared to the ‘O bound to Ni’.
Yongchun Li   +12 more
wiley   +1 more source

Enhancing Plum Wine Safety and Aroma Using Pulsed Electric Field Pretreatment. [PDF]

open access: yesMolecules
Li J   +5 more
europepmc   +1 more source

Joint Control of Radiated and Surface Waves via Space‐Time Coding Metasurfaces

open access: yesAdvanced Functional Materials, EarlyView.
A unified space‐time coding metasurface platform enables simultaneous control of radiated and surface‐confined waves across multiple harmonics. Demonstrated functionalities include multi‐frequency beam shaping; surface‐wave excitation, and hybrid multiplexing.
Zihao Dai   +6 more
wiley   +1 more source

Energy‐Efficient Bulk Photoalignment of Main‐Chain Liquid Crystalline Polymers Enabled by In Situ Monitoring

open access: yesAdvanced Functional Materials, EarlyView.
In situ monitoring of bulk photoalignment reveals how molecular weight, azobenzene content, cooling rate, and thickness govern ordering in main‐chain liquid crystalline polymers. Optimized copolymers exceed conventional thickness limits, maintaining stable alignment up to 130 µm with high energy efficiency and reversible optical patterning.
Jaechul Ju   +3 more
wiley   +1 more source

Universal Neuromorphic Element: NbOx Memristor with Co‐Existing Volatile, Non‐Volatile, and Threshold Switching

open access: yesAdvanced Functional Materials, EarlyView.
A W/NbOx/Pt memristor demonstrates the coexistence of volatile, non‐volatile, and threshold switching characteristics. Volatile switching serves as a reservoir computing layer, providing dynamic short‐term processing. Non‐volatile switching, stabilized through ISPVA, improves reliable long‐term readout. Threshold switching operates as a leaky integrate
Ungbin Byun, Hyesung Na, Sungjun Kim
wiley   +1 more source

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