The Laccase-like Property of GHK-Cu and Its Applications in Colorimetric Sensing of Phenolic Compounds. [PDF]
Chen JS, Zhu H, Chai TQ, Yang FQ.
europepmc +1 more source
Nuclear pore links Fob1‐dependent rDNA damage relocation to lifespan control
Damaged rDNA accumulates at a specific perinuclear interface that couples nucleolar escape with nuclear envelope association. Nuclear pores at this site help inhibit Fob1‐induced rDNA instability. This spatial organization of damage handling supports a functional link between nuclear architecture, rDNA stability, and replicative lifespan in yeast.
Yamato Okada +5 more
wiley +1 more source
NiO/CuO@Graphene oxide-modified electrode for sensitive detection of an antidiabetic drug. [PDF]
Labeeb EN +3 more
europepmc +1 more source
Nanoparticle modified paper-based analytical sensor for calcium determination in human nasal secretions and its association with olfactory dysfunction. [PDF]
Imam MS +11 more
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Argon Ion Treatment of Multi-Material Layered Surface-Electrode Traps for Noise Mitigation. [PDF]
Palani D +7 more
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Spatiotemporal Confinements of Distance-Dependent Emitters for Enhancing Plasmonic Signals. [PDF]
Aslan Y +6 more
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Graphene Quantum Dot-Based Gold-Nickel Micromotors for Sensitive Detection of Ferric Ions. [PDF]
Yurdabak Karaca G.
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CMOS Image Sensors and the Quanta Image Sensor
2018 International Conference on Optical MEMS and Nanophotonics (OMN), 2018This paper briefly reviews CMOS image sensor invention and development. The focus of the paper is on a possible successor - the Quanta Image Sensor – a photon-counting image sensor that operates at room temperature without avalanche multiplication. Experimental results with 1Mpixel array devices are described.
Eric R Fossum
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Jot devices and the Quanta Image Sensor
2014 IEEE International Electron Devices Meeting, 2014The Quanta Image Sensor (QIS) concept and recent work on its associated jot device are discussed. A bipolar jot and a pump-gate jot are described. Both have been modelled in TCAD. As simulated, the pump-gate jot has a full well of 200e- and conversion gain of 480uV/e-.
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