Results 81 to 90 of about 610,695 (319)

Studies on silicon quantum dots prepared at different working pressure

Results in Physics, 2017
This research work describes the synthesis and characterization of Si quantum dots of thickness 20 nm prepared on glass/quartz substrate by Physical Vapour Condensation Technique at the working pressure of 5 and 10 Torr with fixed substrate temperature ...
Faisal A. Al-Agel, Jamal Suleiman, Shamshad A. Khan   +2 more
doaj  

Proton-Prompted Ligand Exchange to Achieve High-Efficiency CsPbI3 Quantum Dot Light-Emitting Diodes

Nano-Micro Letters
Highlights A new proton-promoted in situ ligand exchange strategy based on CsPbI3 quantum dots. The ligand exchange strategy maintains the quantum confinement effect of quantum dots and significantly improves the stability and photophysical properties of
Yanming Li, Ming Deng, Xuanyu Zhang, Lei Qian, Chaoyu Xiang   +4 more
doaj   +1 more source

Telecom O-Band Quantum Dots Fabricated by Droplet Etching

Crystals
We present a novel growth technique for fabricating low-density InAs/GaAs quantum dots that emit in the telecom O-band. This method combines local droplet etching on GaAs surfaces using gallium with Stranski–Krastanov growth initiated by InAs deposition.
Nikolai Spitzer, Elias Kersting, Meret Grell, Danial Kohminaei, Marcel Schmidt, Nikolai Bart, Andreas D. Wieck, Arne Ludwig   +7 more
doaj   +1 more source

Single PbS colloidal quantum dot transistors

Nature Communications, 2023
Colloidal quantum dots are sub-10 nm semiconductors treated with liquid processes, rendering them attractive candidates for single-electron transistors operating at high temperatures.
Kenji Shibata, Masaki Yoshida, Kazuhiko Hirakawa, Tomohiro Otsuka, Satria Zulkarnaen Bisri, Yoshihiro Iwasa   +5 more
doaj   +1 more source

Ultra‐Fast Non‐Volatile Resistive Switching Devices with Over 512 Distinct and Stable Levels for Memory and Neuromorphic Computing

Advanced Functional Materials, EarlyView.
A materials and device design concept that comprises a self‐assembled ultra‐thin epitaxial ion‐transporting layer, an amorphous oxide overcoat oxygen‐blocking layer, and a partial filament formed during an electroforming step is proposed for low‐current multilevel resistive switching devices.
Ming Xiao, Markus Hellenbrand, Nives Strkalj, Babak Bakhit, Zhuotong Sun, Nikolaos Barmpatsalos, Dovydas Joksas, Hongyi Dou, Zedong Hu, Ping Lu, Samip Karki, Sundar Kunwar, Jonathan D. Major, Aiping Chen, Haiyan Wang, Quanxi Jia, Adnan Mehonic, Judith L. MacManus‐Driscoll   +17 more
wiley   +1 more source

Electrical manipulation of an electronic two-state system in Ge/Si quantum dots [PDF]

, 2009
We calculate that the electron states of strained self-assembled Ge/Si quantum dots provide a convenient two-state system for electrical control. An electronic state localized at the apex of the quantum dot is nearly degenerate with a state localized at the base of the quantum dot.
arxiv   +1 more source

Growth and Characterization of Quantum Dots and Quantum Dots Devices [PDF]

, 2003
Quantum dot nanostructures were investigated experimentally and theoretically for potential applications for optoelectronic devices. We have developed the foundation to produce state-of-the-art compound semiconductor nanostructures in a variety of materials: In(AsSb) on GaAs, GaSb on GaAs, and In(AsSb) on GaSb. These materials cover a range of energies
CEDERBERG, JEFFREY G., BIEFELD, ROBERT M., SCHNEIDER, H.C., CHOW, WENG W.   +3 more
openaire   +3 more sources

2D Covalent Moiré Superlattice from Fluorinating Twisted Bilayer Graphene

Advanced Functional Materials, EarlyView.
A novel class of moiré materials, termed covalent moiré superlattice is proposed, which can be synthesized by functionalizing moiré van der Waals materials. By fluorinating twisted bilayer graphene, the weak van der Waals interactions between twisted graphene layers are transformed into strong covalent bonds, making the moiré superlattice effects ...
Depeng Ji, Qiaoling Xu, Lede Xian
wiley   +1 more source

Wetting of Surface Grafted Hydrophilic‐b‐Hydrophobic Block Copolymer Brushes

Advanced Functional Materials, EarlyView.
The wetting properties of surface grafted diblock copolymer brushes are influenced by the thickness of the hydrophilic bottom block and the hydrophobic top block. The surface adapts in presence of water and the contact angles of the bottom block shine through. Abstract The wetting of diblock copolymer brushes by water is studied.
Benjamin Leibauer, Andres de los Santos Pereira, Diego Fernando Dorado Daza, Y. Wang, A.S. Hazrah, Ognen Pop‐Georgievski, Hans‐Jürgen Butt, Rüdiger Berger   +7 more
wiley   +1 more source

Phonon impact on optical control schemes of quantum dots: The role of quantum dot geometry and symmetry [PDF]

, 2017
Phonons strongly influence the optical control of semiconductor quantum dots. When modeling the electron-phonon interaction in several theoretical approaches the quantum dot geometry is approximated by a spherical structure, though typical self-assembled quantum dots are strongly lens-shaped.
arxiv   +1 more source