Results 231 to 240 of about 1,956,567 (332)

Unveiling the Werner-Type Cluster Chemistry of Heterometallic 4f/Post-Transition Metals: A {Dy₃Bi₈} Complex Exhibiting Quantum Tunneling Steps in the Hysteresis Loops and its 1-D Congener. [PDF]

Inorg Chem
Baka KH, Liu D, Paul S, Wernsdorfer W, Tang J, Chibotaru LF, Stamatatos TC.   +6 more
europepmc   +1 more source

Study of Resistive Switching Dynamics and Memory States Equilibria in Analog Filamentary Conductive‐Metal‐Oxide/HfOx ReRAM via Compact Modeling

Advanced Electronic Materials, EarlyView.
A physics‐based compact model for Conductive‐Metal‐Oxide/HfOx ReRAM, accounting for ion dynamics, electronic conduction, and thermal effects, is presented. Accurate and versatile simulations of analog non‐volatile conductance modulation and memory state stabilization enable reliable circuit‐level studies, advancing the optimization of neuromorphic and ...
Matteo Galetta, Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Stephan Menzel, Antonio La Porta, Tommaso Stecconi, Folkert Horst, Bert Jan Offrein, Valeria Bragaglia   +9 more
wiley   +1 more source

Role of Potassium Ions Quantum Tunneling in the Pathophysiology of Phantom Limb Pain. [PDF]

Brain Sci, 2020
Alrabayah M, Qaswal AB, Suleiman A, Khreesha L.   +3 more
europepmc   +1 more source

A Quantum Measurement Approach to Tunnelling [PDF]

, 1993
openaire   +1 more source

Metal–Insulator–Insulator–Metal (MIIM) Ag/SnO2/Al2O3/Ag Diodes Fabricated by Ultraprecise Dispensing and Atomic Layer Deposition

Advanced Electronic Materials, EarlyView.
This study introduces a new method for fabricating MIIM diodes using ultra‐precise dispensing printing techniques combined with ALD. Thus, it provides a practical alternative to traditional lithography. The fabricated diode, with a contact area of 5.4 µm × 4.0 µm exhibits a tunneling current in the microampere range, a zero‐bias responsivity of −1.31 A/
Aboubacar Savadogo, Klaus Huska, Rohit D. Chavan, Thomas Nyachoti Nyangonda, Jan Feßler, Bernard Odhiambo Aduda, Ulrich Wilhelm Paetzold, Uli Lemmer, Mohamed Hussein   +8 more
wiley   +1 more source

Unconventional Breathing Currents Far beyond the Quantum Tunneling Distances in Large-Gapped Nanoplasmonic Systems. [PDF]

Nano Lett
Satheesh A, Yang CM, Gaidhane V, Sood N, Goel N, Bozkurt S, Singh KK, Bhalla N.   +7 more
europepmc   +1 more source

Reconfigurable, Non‐Volatile Switching in WO3 Film for Resistive Memory and Multistate Programming Toward Energy‐Efficient Neuromorphic Computing Applications

Advanced Electronic Materials, EarlyView.
WO3${\rm WO}_3$ based resistive switching device was precisely controlled and shows the reconfigurable, non‐volatile switching which can be programmable to multi‐resistance states for memory applications. The memory device can also be utilised for low energy neuromorphic application.
Keval Hadiyal, Nagarajan Raghavan, Ramesh Mohan Thamankar   +2 more
wiley   +1 more source

Analysis of Magnetic Switching in Magnetically Coupled Dual Free Layers Within Magnetic Tunnel Junctions (MTJ) for STT MRAM

Advanced Electronic Materials, EarlyView.
A magnetic tunnel junction (MTJ) with two free layers shows four magnetization reversal phases governed by interlayer magnetic coupling (Jcpl). Phase 2 (sequential reversal) reduces write current (Iw) by 50% for 30‐nm‐diameter MTJs compared to Phase 4 (coherent reversal), while Jcpl also boosts thermal stability.
Shujun Ye, Koichi Nishioka
wiley   +1 more source

High‐Performance and Energy‐Efficient Sub‐5 nm 2D Double‐Gate MOSFETs Based on Silicon Arsenide Monolayers

Advanced Electronic Materials, EarlyView.
Sub‐5 nm double‐gate MOSFETs based on 2D SiAs monolayers are investigated using quantum transport simulations. By engineering source‐drain underlap regions, the devices achieve exceptional on‐currents of up to 1206 µA µm−1, surpassing the ITRS 2028 high‐performance targets.
Dogukan Hazar Ozbey, Engin Durgun
wiley   +1 more source