Results 201 to 210 of about 48,619 (333)

Reconfigurable, Non‐Volatile Switching in WO3 Film for Resistive Memory and Multistate Programming Toward Energy‐Efficient Neuromorphic Computing Applications

Advanced Electronic Materials, EarlyView.
WO3${\rm WO}_3$ based resistive switching device was precisely controlled and shows the reconfigurable, non‐volatile switching which can be programmable to multi‐resistance states for memory applications. The memory device can also be utilised for low energy neuromorphic application.
Keval Hadiyal, Nagarajan Raghavan, Ramesh Mohan Thamankar   +2 more
wiley   +1 more source

Fundamental Challenges, Physical Implementations, and Integration Strategies for Ising Machines in Large‐Scale Optimization Tasks

Advanced Electronic Materials, EarlyView.
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley   +1 more source

Uranium Doped Gallium Nitride Epitaxial Thin Films

Advanced Electronic Materials, EarlyView.
Uranium was controllably added to gallium nitride using molecular beam epitaxy. The uranium atoms segregated into vertically oriented regions with higher doping levels. Concentrations up to a few percent were achieved without showing significant degradation in the crystalline quality or optical characteristics. Low electrical resistivity was maintained
J. Pierce Fix, Sabin Regmi, Aaron G. Penders, Sohail Shah, Kevin D. Vallejo, Volodymyr B. Buturlim, Belief Rifore, Krzysztof Gofryk, Mukesh Bachhav, Nicholas J. Borys, Brelon J. May   +10 more
wiley   +1 more source

Quantum heat engine based on photon-assisted Cooper pair tunneling [PDF]

, 2016
Patrick P. Hofer, J.-R. Souquet, Aashish A. Clerk   +2 more
openalex   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Topological Materials and Related Applications

Advanced Electronic Materials, EarlyView.
This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti, Roberto Mantovan, Emanuele Longo, Harold J. W. Zandvliet, Pantelis Bampoulis, Yu Pan, Fan Li, Xia Wang, Payton Downey, Alessandro Molle   +9 more
wiley   +1 more source

Large-scale analogue quantum simulation using atom dot arrays. [PDF]

Nature
Donnelly MB, Chung Y, Garreis R, Plugge S, Pye D, Kiczynski M, Támara-Isaza J, Munia MM, Sutherland S, Voisin B, Kranz L, Hsueh YL, Huq AMS, Myers CR, Rahman R, Keizer JG, Gorman SK, Simmons MY.   +17 more
europepmc   +1 more source

SPICE‐Compatible Compact Modeling of Cuprate‐Based Memristors Across a Wide Temperature Range

Advanced Electronic Materials, EarlyView.
A physics‐guided compact model for YBCO memristors is introduced, incorporating carrier trapping, field‐induced detrapping, and a differential balance equation to describe their switching dynamics. The model is compared with experiments and implemented in LTspice, allowing realistic circuit‐level simulations.
Thomas Günkel, Aleix Barrera, Lluís Balcells, Narcís Mestres, Enrique Miranda, Anna Palau, Jordi Suñé   +6 more
wiley   +1 more source

Non‐volatile Sliding Ferroelectric Memory Effect in Ultrathin γ‐InSe

Advanced Electronic Materials, EarlyView.
Room‐temperature sliding ferroelectricity in γ‐InSe enables a two‐dimensional FeFET with a 6.8 V memory window, above 104 conductance modulation, longer than 10‐years retention and above 103 cycles fatigue resistance. An ultrathin (4.8 nm) γ‐InSe ferroelectric tunnel junction exhibits reversible high/low resistance switching with TER of 105 at room ...
Yue Li, Luoyang Ding, Zhixiong Li, Feng Chen, Xiaoyao Weng, Min Zhu, Siyuan Wan, Yangbo Zhou   +7 more
wiley   +1 more source

Quantum medicine: A quantum-mechanical framework for redox biology, disease and precision medicine. [PDF]

Clin Transl Med
Sung JY, Cheong JH.
europepmc   +1 more source