Results 251 to 260 of about 390,014 (300)

Radiation defects in feldspars

Physics and Chemistry of Minerals, 1982
Various radiation defects were characterized and analyzed by electron paramagnetic resonance (EPR) in 15 feldspars of different compositions after X-ray irradiation. A hole center on oxygen adjacent to two aluminum ions is formed in most feldspars, except those with very high An content.
B. Speit, G. Lehmann
openaire   +1 more source

Radiation induced defects in KBr:Tl+ crystals

Journal of Physics and Chemistry of Solids, 1982
Abstract The defects produced in KBr:Tl + crystals during x -irradiation at 77 K were studied using thermoluminescence (TL), thermally stimulated currents (TSC), and absorption and emission spectra. Three main glow peaks at 165, 193 and 258 K were observed both in the TL and in the TSC curves.
M. Roth, A. Halperin
openaire   +1 more source

Radiation Defects in Oxide Compounds

Crystal Research and Technology, 1999
Yttrium-aluminum garnets, strontium and barium lanthanum gallates, lithium niobate and tantalate as-grown crystals and doped by diffusion with rare-earth (Nd, Dy, Er, Tm, Ho, Pr, Ce) and metal transition elements (Mn, Cr) were investigated optically and using Electron Spin Resonance method before and after gamma, electron and proton irradiation.
S. M. Kaczmarek, R. Jablonski, Z. Moroz, I. Pracka, T. Lukasiewicz   +4 more
openaire   +1 more source

Radiation induced defects in diamond

Radiation Effects, 1971
Abstract A critical review of radiation damage in diamond is presented, focusing on important specific centres rather than attempting a review of the whole field. The proposed models for these centres are examined and often found wanting. Phenomena observed in ion bombardment of diamond is discussed and found to probably be due to amorphous or graphite
C. D. Clark, E. W. J. Mitchell
openaire   +1 more source

Radiation-induced defects in GaN

Physica Scripta, 2010
Radiation-induced defects in n-type GaN irradiated by 2 MeV electrons at room temperature were studied by electron paramagnetic resonance (EPR).
N T Son, C G Hemmingsson, N Morishita, T Ohshima, T Paskova, K R Evans, A Usui, J Isoya, B Monemar, E Janzén   +9 more
openaire   +1 more source

Radiation defects in BaLaGa3O7 crystals

Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy, 1998
Abstract The effect of γ -exposure from a 60 Co source on the electron spin resonance (ESR), absorption and thermoluminescence of BaLaGa 3 O 7 (BLGO) single crystals undoped and doped with Nd − ions was investigated. A radiation defect connected with the shifting of a short-wave absorption edge is described.
Ryszard Jabłoński, Sławomir Kaczmarek, Marek Berkowski   +2 more
openaire   +1 more source

Chornobyl, radiation, neural tube defects, and microcephaly

European Journal of Medical Genetics, 2018
Pregnant women residing in areas impacted by the Chornobyl ionizing radiation of the Rivne Province in Ukraine have persistent higher levels of incorporated cesium-137. In these areas the neural tube defects and microcephaly rates are significantly higher than in areas with lower maternal cesium-137 incorporated levels.
Wladimir, Wertelecki, Lyubov, Yevtushok, Illia, Kuznietsov, Oleksandr, Komov, Serhii, Lapchenko, Diana, Akhmedzanova, Lyubov, Ostapchuk   +6 more
openaire   +2 more sources

Radiation defects in germanium. radiation defects annealed at ∼260°C in n-type germanium

Radiation Effects and Defects in Solids, 1992
Abstract Point defects produced by neutron, electron or γ-ray irradiation were studied by electrical measurements. The defect levels were analyzed by DLTS technique. Annealing of radiation induced defects at about 260°C was obtained in 20 min isochronal annealings.
N. Fukuoka, H. Yamaji, M. Honda, K. Atobe   +3 more
openaire   +1 more source

Radiation defects in electron-irradiated InP crystals

physica status solidi (a), 1982
The results are presented of formation and annealing of defects in InP crystals at 1 to 50 MeV electron irradiation. The recovery of electrical properties in the range of 77 to 970 K during annealing processes is studied. Five low temperature annealing states in n-InP and the reverse annealing in p-InP are observed at 77 to 300 K. Pour annealing stages
E. Yu. Brailovskii, F. K. Karapetyan, I. G. Megela, V. P. Tartachnik   +3 more
openaire   +1 more source

Radiation Defects in LiBaF3 Perovskites

2000
We investigated the electron paramagnetic resonance (EPR), recombination afterglow, thermostimulated luminescence (TSL) and absorption of LiBaF3 perovskites crystals X-irradiated at 80 K The self-trapped hole centre VK(F2-) oriented along the [110] axis and electron F type (FA) centres are identified.
P. Kulis, I. Tale, M. Springis, U. Rogulis, J. Trokss, A. Veispals, H.-J. Fitting   +6 more
openaire   +1 more source