Results 261 to 270 of about 149,749 (307)

Radiation defects in feldspars

Physics and Chemistry of Minerals, 1982
Various radiation defects were characterized and analyzed by electron paramagnetic resonance (EPR) in 15 feldspars of different compositions after X-ray irradiation. A hole center on oxygen adjacent to two aluminum ions is formed in most feldspars, except those with very high An content.
B. Speit, G. Lehmann
openaire   +1 more source

Interaction of radiation defects with the surface of silicon

Physica Status Solidi (a), 1984
The formation and annealing processes of radiation defects in bulk crystals and thin (≈ 1.2 μm) epitaxial layers of Si are studied. Czochralski grown (pulled) and vacuum float-zone n-type Si crystals with ϱ = 1 to 2 Ωcm as well as n-type Si epitaxial layers (∂ ≈ 1 Ωcm) grown on substrates of p-type Si, 400 pm thick (ϱ ≈ 10 Ωcm) are used.
V. I. Kuznetsov, P . F Lugakov, A. V Tsikunov   +2 more
openaire   +1 more source

Defect in Radiation Signal Transduction in Ataxia-telangiectasia

International Journal of Radiation Biology, 1994
Exposure of mammalian cells to ionizing radiation causes a delay in progression through the cycle at several checkpoints. Cells from patients with ataxia-telangiectasia (A-T) ignore these checkpoint controls postirradiation. The tumour suppressor gene product p53 plays a key role at the G1/S checkpoint preventing the progression of cells into S phase ...
Lavin, M. F., Khanna, K. K., Beamish, H., Teale, B., Hobson, K., Watters, D.   +5 more
openaire   +4 more sources

Radiation induced defects in KBr:Tl+ crystals

Journal of Physics and Chemistry of Solids, 1982
Abstract The defects produced in KBr:Tl + crystals during x -irradiation at 77 K were studied using thermoluminescence (TL), thermally stimulated currents (TSC), and absorption and emission spectra. Three main glow peaks at 165, 193 and 258 K were observed both in the TL and in the TSC curves.
M. Roth, A. Halperin
openaire   +1 more source

Radiation Defects Created in n‐Type 4H‐SiC by Electron Irradiation in the Energy Range of 1–10 MeV

Physica Status Solidi (A) Applications and Materials Science, 2019
Radiation damage produced in 4H–SiC n–epilayers by electrons of different energies is presented. Junction Barrier Schottky power SiC diodes were irradiated with 1.05, 2.1, 5 and 10 MeV electrons with doses up to 600 kGy.
Pavel Hazdra, J Vobecký
exaly   +2 more sources

Radiation induced defects in diamond

Radiation Effects, 1971
Abstract A critical review of radiation damage in diamond is presented, focusing on important specific centres rather than attempting a review of the whole field. The proposed models for these centres are examined and often found wanting. Phenomena observed in ion bombardment of diamond is discussed and found to probably be due to amorphous or graphite
C. D. Clark, E. W. J. Mitchell
openaire   +1 more source

Radiation-induced defects in GaN

Physica Scripta, 2010
Radiation-induced defects in n-type GaN irradiated by 2 MeV electrons at room temperature were studied by electron paramagnetic resonance (EPR).
N T Son, C G Hemmingsson, N Morishita, T Ohshima, T Paskova, K R Evans, A Usui, J Isoya, B Monemar, E Janzén   +9 more
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Radiation Defects in Oxide Compounds

Crystal Research and Technology, 1999
Yttrium-aluminum garnets, strontium and barium lanthanum gallates, lithium niobate and tantalate as-grown crystals and doped by diffusion with rare-earth (Nd, Dy, Er, Tm, Ho, Pr, Ce) and metal transition elements (Mn, Cr) were investigated optically and using Electron Spin Resonance method before and after gamma, electron and proton irradiation.
S. M. Kaczmarek, R. Jablonski, Z. Moroz, I. Pracka, T. Lukasiewicz   +4 more
openaire   +1 more source

Radiation defects in BaLaGa3O7 crystals

Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy, 1998
Abstract The effect of γ -exposure from a 60 Co source on the electron spin resonance (ESR), absorption and thermoluminescence of BaLaGa 3 O 7 (BLGO) single crystals undoped and doped with Nd − ions was investigated. A radiation defect connected with the shifting of a short-wave absorption edge is described.
Ryszard Jabłoński, Sławomir Kaczmarek, Marek Berkowski   +2 more
openaire   +1 more source

Annealing of Radiation Defects in Semiconductors

Journal of Applied Physics, 1959
Radiation induced defects studied through changes in conductivity and Hall coefficient have been observed to anneal in a number of different temperature ranges. Only those processes occurring above 80°K and involving defects created by electron irradiation have been considered in this paper.
W. L. Brown, W. M. Augustyniak, T. R. Waite   +2 more
openaire   +1 more source