Results 251 to 260 of about 392,204 (294)

Radiation induced defects in KBr:Tl+ crystals

Journal of Physics and Chemistry of Solids, 1982
Abstract The defects produced in KBr:Tl + crystals during x -irradiation at 77 K were studied using thermoluminescence (TL), thermally stimulated currents (TSC), and absorption and emission spectra. Three main glow peaks at 165, 193 and 258 K were observed both in the TL and in the TSC curves.
M. Roth, A. Halperin
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Radiation Defects in Oxide Compounds

Crystal Research and Technology, 1999
Yttrium-aluminum garnets, strontium and barium lanthanum gallates, lithium niobate and tantalate as-grown crystals and doped by diffusion with rare-earth (Nd, Dy, Er, Tm, Ho, Pr, Ce) and metal transition elements (Mn, Cr) were investigated optically and using Electron Spin Resonance method before and after gamma, electron and proton irradiation.
S. M. Kaczmarek, R. Jablonski, Z. Moroz, I. Pracka, T. Lukasiewicz   +4 more
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Radiation induced defects in diamond

Radiation Effects, 1971
Abstract A critical review of radiation damage in diamond is presented, focusing on important specific centres rather than attempting a review of the whole field. The proposed models for these centres are examined and often found wanting. Phenomena observed in ion bombardment of diamond is discussed and found to probably be due to amorphous or graphite
C. D. Clark, E. W. J. Mitchell
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Radiation-induced defects in GaN

Physica Scripta, 2010
Radiation-induced defects in n-type GaN irradiated by 2 MeV electrons at room temperature were studied by electron paramagnetic resonance (EPR).
N T Son, C G Hemmingsson, N Morishita, T Ohshima, T Paskova, K R Evans, A Usui, J Isoya, B Monemar, E Janzén   +9 more
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Radiation defects in BaLaGa3O7 crystals

Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy, 1998
Abstract The effect of γ -exposure from a 60 Co source on the electron spin resonance (ESR), absorption and thermoluminescence of BaLaGa 3 O 7 (BLGO) single crystals undoped and doped with Nd − ions was investigated. A radiation defect connected with the shifting of a short-wave absorption edge is described.
Ryszard Jabłoński, Sławomir Kaczmarek, Marek Berkowski   +2 more
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Radiation defects in electron-irradiated InP crystals

physica status solidi (a), 1982
The results are presented of formation and annealing of defects in InP crystals at 1 to 50 MeV electron irradiation. The recovery of electrical properties in the range of 77 to 970 K during annealing processes is studied. Five low temperature annealing states in n-InP and the reverse annealing in p-InP are observed at 77 to 300 K. Pour annealing stages
E. Yu. Brailovskii, F. K. Karapetyan, I. G. Megela, V. P. Tartachnik   +3 more
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Radiation Defects in LiBaF3 Perovskites

2000
We investigated the electron paramagnetic resonance (EPR), recombination afterglow, thermostimulated luminescence (TSL) and absorption of LiBaF3 perovskites crystals X-irradiated at 80 K The self-trapped hole centre VK(F2-) oriented along the [110] axis and electron F type (FA) centres are identified.
P. Kulis, I. Tale, M. Springis, U. Rogulis, J. Trokss, A. Veispals, H.-J. Fitting   +6 more
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Radiation damage and point defects

Philosophical Magazine, 2013
Sir Alan Cottrell has made huge seminal contributions to our basic understanding of radiation damage processes in both fissile and non-fissile materials. Much of this ground-breaking work was accomplished in the mid-1950s when Cottrell was working at Birmingham University and later at Harwell Laboratory. It is interesting to relate the earlier progress
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The Effects of Defects on Channeling Radiation

physica status solidi (b), 1986
AbstractThe spectral features of the electromagnetic radiation emitted from relativistically fast positrons and electrons channeled along major crystallographic directions and planes are very sensitive to the interatomic potential assumed between theprojectile and the target crystal.
Anand P. Pathak, Prasanna K. J. Balagari
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Radiation damage, defects and surfaces

Surface Science, 1979
Abstract The status of radiation damage and defects in bulk metallic, covalent and ionic systems is reviewed, including damage production processes, defect configurations and defect migration mechanisms. These results are then considered in the vicinity of a surface. The physical surface and the electronic surface can alter bulk defect processes, but
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