Results 261 to 270 of about 390,014 (300)

Radiation damage and point defects

Philosophical Magazine, 2013
Sir Alan Cottrell has made huge seminal contributions to our basic understanding of radiation damage processes in both fissile and non-fissile materials. Much of this ground-breaking work was accomplished in the mid-1950s when Cottrell was working at Birmingham University and later at Harwell Laboratory. It is interesting to relate the earlier progress
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The Effects of Defects on Channeling Radiation

physica status solidi (b), 1986
AbstractThe spectral features of the electromagnetic radiation emitted from relativistically fast positrons and electrons channeled along major crystallographic directions and planes are very sensitive to the interatomic potential assumed between theprojectile and the target crystal.
Anand P. Pathak, Prasanna K. J. Balagari
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Radiation damage, defects and surfaces

Surface Science, 1979
Abstract The status of radiation damage and defects in bulk metallic, covalent and ionic systems is reviewed, including damage production processes, defect configurations and defect migration mechanisms. These results are then considered in the vicinity of a surface. The physical surface and the electronic surface can alter bulk defect processes, but
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RADIATION INDUCED DEFECTS IN BIPOLAR POWER TRANSISTORS: INFLUENCE OF RADIATION ENERGY

Astroparticle, Particle and Space Physics, Detectors and Medical Physics Applications, 2004
The results of a study on the radiation-induced defects in a bipolar power transistor exposed to electrons of different energies are reported. The devices have been irradiated with electron beams of energies ranging from 2.2 up to 8.6 MeV and different doses from 0.2 to 5 × 10^13 electrons/cm2 (0.8-25 kGy).
P. Fuochi, M. Lavalle, G. Lulli, E. Gombia, PRUDENZIATI, Maria, M. Mc Ewen   +5 more
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Radiation-Induced Defects in Radiation Hard and Soft Oxides

Acta Physica Sinica (Overseas Edition), 1994
The point defects of Pb and E' in radiation hard and soft Si-SiO2 samples were examined using electron spin resonance (ESR). The experimental results showed that these defects were correlated with the ways of oxidation process, the dosage of 60Co radiation and the radiation bias field.
Liu Chang-shi, Ma Zhong-quan, Zhao Yuan-fu   +2 more
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Defect in Radiation Signal Transduction in Ataxia-telangiectasia

International Journal of Radiation Biology, 1994
Exposure of mammalian cells to ionizing radiation causes a delay in progression through the cycle at several checkpoints. Cells from patients with ataxia-telangiectasia (A-T) ignore these checkpoint controls postirradiation. The tumour suppressor gene product p53 plays a key role at the G1/S checkpoint preventing the progression of cells into S phase ...
Lavin, M. F., Khanna, K. K., Beamish, H., Teale, B., Hobson, K., Watters, D.   +5 more
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Redistribution of point defects during radiation defect annealing in GaAs

Radiation Effects, 1981
Abstract The processes of migration and redistribution of point defects, generated in GaAs as a result of irradiation and released during annealing of the main isolated radiation defects, were studied. It was found that some point defects, generated during irradiation, migrate at significant distances and deposit at neutral impurity inclusions ...
T. I. Kolchenko, V. M. Lomako
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Radiation Defect Engineering

International Journal of High Speed Electronics and Systems, 2005
Kozlovski Vitali, Abrosimova Vera
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Radiation-induced defects in amorphous Pd80Si20

Zeitschrift f�r Physik B Condensed Matter, 1980
Irradiation of the metallic glass Pd80Si20 with high energy Ar-ions at low temperatures resulted in electrical resistance increases of about 5% at a measuring temperature of 10 K after fluences of 3·1015 Ar/cm2 indicating that defects were created by radiation damage. Annealing experiments were performed up to 150°C showing a smooth recovery throughout
G. Schumacher, S. Klaum�nzer, S. Rentzsch, G. Vogl   +3 more
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Hydroxyl defects in germanium-doped quartz: Defect dynamics and radiation effects

Physical Review B, 1995
Irradiation effects on near-infrared absorption bands have been studied in a variety of Ge-doped cultured quartz crystals. The irradiation was done at 77, 300, and finally again at 77 K in a sequence. Extended radiation doses upon final irradiation at 77 K exhibited the presence of a defect center absorbing at 3400 cm{sup {minus}1}, which increased ...
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