Results 291 to 300 of about 2,059,339 (331)

New technologies for radiation-hardening analog to digital converters

, 1982
M. K. Gauthier
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Laser Surface Hardening of Carburized Steels: A Review of Process Parameters and Application in Gear Manufacturing. [PDF]

Materials (Basel)
Kluczyński J, Jasik K, Łuszczek J, Pokropek J.   +3 more
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Advancements in High-Resolution Computed Tomography: Revolutionising Bone Health Micro-Research. [PDF]

Bioengineering (Basel)
Lindtner R, Kampik L, Putzer D, Klosterhuber M, Pallua AK, Streif W, Schirmer M, Degenhart G, Arora R, Pallua JD.   +9 more
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Dataset for the Study of Radiation-Hardened 60V Trench MOSFETs

De-Xin Chen, Ying Wang, H. C. Huang, Yan-Xing Song, Meng-Tian Bao, Fei Cao   +5 more
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Non-contrast photon counting computed tomography of the head: optimized modeling of off-focal radiation to reduce calvarium-related tissue inhomogeneity. [PDF]

BMC Med Imaging
Michael AE, Petersilka M, Schoenbeck D, Woeltjen MM, Niehoff JH, Moenninghoff C, Kurzendorfer T, Borggrefe J, Goertz L, Kroeger JR.   +9 more
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A Soft Error Self-Resilience Radiation-Hardened 14T SRAM for Aerospace Applications

G. V. S. R. Anjaneyulu, Asisa Kumar Panigrahy, Mukku Pavan Kumar, Shams Ul Haq, Abdolreza Darabi, Erfan Abbasian, Priyanka Sharma, M. Durga Prakash   +7 more
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Effect of Post-Printing Methods on the Microstructure and Mechanical Properties of Ti6Al4V Titanium Alloy Samples Fabricated Using Laser Powder Bed Fusion. [PDF]

Materials (Basel)
Żaba K, Rusz S, Haslik-Sopata A, Kuczek Ł, Różycka I, Balcerzak M, Trzepieciński T.   +6 more
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Investigation of Radiation Hardening by Back-Channel Adjustment in PDSOI MOSFETs

IEEE Transactions on Nuclear Science, 2021
Total ionizing dose (TID) degradation is caused by radiation-induced charge buildup in oxides. Radiation hardening of silicon-on-insulator (SOI) devices with deep submicrometer nodes or nanonodes is mainly concerned with the field oxide and buried oxide.
Chunmei Liu, Huilong Zhu, Xin Xie, Zhiyuan Hu, Dawei Bi, Zhengxuan Zhang, S. Zou   +6 more
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Total-Ionizing-Dose Radiation-Induced Electric Field Redistribution Model and Hardening Method for SGT MOSFET

IEEE Transactions on Electron Devices, 2023
In this article, an analytical model for the total-ionizing-dose (TID) radiation-induced electric field redistribution (RIER) in the drift region is established based on the Poisson equation, which explains the “slow-fast-slow” degradation trend of ...
M. Ren, Shuping Zhang, Junjie Tu, Lin Tao, Ziyi Zhou, Yining Wu, Zehong Li, Bo Zhang   +7 more
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SRAM Radiation Hardening Through Self-Refresh Operation and Error Correction

IEEE transactions on device and materials reliability, 2020
In Space applications, the scaling of transistors has made integrated circuits (ICs) more susceptible to soft errors, caused by radiation strikes. When a soft error causes a bit flip in a memory device, this event is referred to as a Single Event Upset ...
Sharma Ruchi, Loi Van, Taegeun Le, Yoo Tony, Tae-Hyoung, Tae-Hyoung Kim, I. Chang   +6 more
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