Results 301 to 310 of about 72,269 (350)

Radiation-Hardened Microelectronics

AT&T Technical Journal, 1991
Many nuclear power, defense, and space applications require radiation-hardened integrated circuits. In 1986, Sandia's expertise in microelectronics radiation hardening was combined with ATT the new process is running at AT&T's Allentown, Pennsylvania, MOS V production facility, and the technology has been transferred to Sandia's Microelectronics ...
James L. Jorgensen, David S. Yaney
openaire   +1 more source

Transistor sizing for radiation hardening

2004 IEEE International Reliability Physics Symposium. Proceedings, 2004
This paper presents an efficient and accurate numerical analysis technique to simulate single event upsets (SEUs) in logic circuits. Experimental results that show the method is accurate to within 10% of the results obtained using SPICE are provided.
null Quming Zhou, K. Mohanram
openaire   +1 more source

Radiation Hardened by Design

2015
The major work introduced in this book is to develop a megagray-radiation-tolerant ps-resolution time-to-digital converter (TDC) for a light detection and ranging (LIDAR) application. In this chapter, major radiation effects in complementary metal–oxide–semiconductor (CMOS) integrated circuits (ICs) are introduced. The total ionizing dose (TID) effects
Ying Cao, Paul Leroux, Michiel Steyaert
openaire   +1 more source

On the saturation of radiation hardening

Physics Letters A, 1969
Abstract A model of saturation of radiation hardening is given. This model suggests that saturation of the thermal hardening component should occur at different fluence levels than would the athermal component.
openaire   +1 more source

Radiation Hardened by Design Sense Amplifier

2019
This paper presents a fully symmetrical radiation hardened sense amplifier is designed in and 32 nm FinFET Double gate PTM technology to tolerate single node upset and multiple-node upset.circuit. A 9 pC charge is used at critical node of the sense amplifier to analyse Single Event Transient.
Avinash Verma, Gaurav Kaushal
openaire   +1 more source

Radiation-hardened microelectronics for accelerators

IEEE Transactions on Nuclear Science, 1988
Ionization and displacement phenomena in semiconducting materials are reviewed. How these basic effects lead to changes in the electrical characteristics of transistors and diodes and the functionality of integrated circuits are discussed. The fundamental radiation limits for various semiconductor technologies are summarized.
J.E. Gover, T.A. Fischer
openaire   +1 more source

Radiation Hardened CMOS/SOS

IEEE Transactions on Nuclear Science, 1975
This paper reports the results of experiments designed to optimize the total dose ionizing radiation hardness of CMOS/SOS devices. Type 4007 inverter circuits were fabricated with variations in the process, including wet versus dry gate oxidation. Tolerable values (e. g.
K. G. Aubuchon, E. Harari
openaire   +1 more source

Radiation-hardening of semiconductor parts

2002
Abstract ‘Radiation-hardening’ derives from military terminology (see Section 4.1). The term has acquired a wide variety of meanings, depending on the user group and radiation environment concerned. That environment may present a variety of levels of total ionizing dose, transient dose rate, neutrons, or single-event upsets.
Andrew Holmes-Siedle, Len Adams
openaire   +1 more source

Radiation Hardening by Process

2017
This chapter describes the approaches for optimization of semiconductor device fabrication processes and structures to mitigate radiation effects in advanced silicon-based technologies, primarily complementary metal oxide semiconductor (CMOS). It discusses effects and mitigation approaches related to insulators, active device regions, and process ...
openaire   +1 more source

Radiation anneal hardening in molybdenum

Physica Status Solidi (a), 1974
Yield stress measurements have been performed on irradiated and annealed-irradiated high purity (5 wt ppm interstitials) and intermediate purity (27 wt ppm interstitials) molybdenum single crystals of (100), (110), and (491) orientations. Radiation anneal hardening which is the additional increment in yield stress over that observed in irradiated ...
D. F. Hasson, K. J. Arsenault
openaire   +1 more source