Results 291 to 300 of about 72,269 (350)
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Radiation hardening of silicon detectors
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1999Abstract The radiation hardness of high grade silicon detectors is summarized in terms of an increase of the diode reverse current, evolution of the full depletion voltage and charge collection efficiency. With the aim of improving their radiation tolerance, detectors have been produced from non-standard, float-zone silicon containing various atomic ...
F Lemeilleur
exaly +2 more sources
Radiation hardening in vanadium
Journal of Nuclear Materials, 1970Abstract The effects of neutron irradiation on the tensile properties of 99.9 wt % pure vanadium are investigated in the fluence range 8 × 10 17 to 4 × 10 19 n / cm −2 ( E >1 MeV ). Vanadium is shown to display typical radiation and anneal hardening like other bodycentered cubic (bcc) transition metals.
G.R. Smolik, C.W. Chen
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Radiation Hardening in Platinum
physica status solidi (b), 1968AbstractSome measurements of the hardening introduced by fast neutrons in pure platinum are reported. It is found that the change in yield stress of neutron irradiated platinum varies as (Φt)1/2, in agreement with a lattice hardening mechanism. The rate of increase in damage, as observed with field ion microscopy in irradiated platinum, is compared ...
J. M. Galligan, M. J. Attardo
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IEEE Transactions on Nuclear Science, 1970
The requirement for radiation hardened registers has been identified for use with existing digital equipment to assure system survivability in nuclear radiation environments. The major problem has been that all semiconductor registers cannot be guaranteed to maintain their information after ionizing radiation transients above 5×109 rads (Si)/sec.
D. Hampel, K. J. Prost
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The requirement for radiation hardened registers has been identified for use with existing digital equipment to assure system survivability in nuclear radiation environments. The major problem has been that all semiconductor registers cannot be guaranteed to maintain their information after ionizing radiation transients above 5×109 rads (Si)/sec.
D. Hampel, K. J. Prost
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International Journal of Electronics, 2008
Historically, specialized foundry processes have been utilized to produce radiation hardened microelectronics. Radiation hardness by design techniques have been shown to be capable of producing devices of sufficient hardness to resist the deleterious effects of the natural radiation environment of space utilizing standard commercial processes.
J. W. Gambles +2 more
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Historically, specialized foundry processes have been utilized to produce radiation hardened microelectronics. Radiation hardness by design techniques have been shown to be capable of producing devices of sufficient hardness to resist the deleterious effects of the natural radiation environment of space utilizing standard commercial processes.
J. W. Gambles +2 more
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Technology development for the radiation hardening of robots
Proceedings 1999 IEEE/RSJ International Conference on Intelligent Robots and Systems. Human and Environment Friendly Robots with High Intelligence and Emotional Quotients (Cat. No.99CH36289), 2003A radiation tolerant KAEROT/m2 system is being developed by a team composed of engineers and scientists from the Korea Atomic Energy Research Institute (KAERI) and Inventors' Enterprise Inc. The team is developing radiation tolerant data acquisition and control boards for CANDU reactor inspection. This paper outlines the work performed to harden a data
O. U. Youk +4 more
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Radiation-hardened phototransistor
IEEE Transactions on Nuclear Science, 1991A radiation-hardened, monolithic, silicon bipolar phototransistor has been developed and produced. Common emitter current gain at 2 mA collector current is 225 and remains above 140 after irradiation of 1 E13 n/sq cm or 1 Mrad(Si). Device photoresponse to 820 nm light decreases about 30% after 1 Mrad(Si) exposure and 55% after 1 E13 n/sq cm irradiation
W.T. Matzen, R.A. Hawthorne, W.T. Kilian
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Nonvolatile radiation hardened DICE latch
2015 15th Non-Volatile Memory Technology Symposium (NVMTS), 2015Spintronic-based integrated circuits have been widely considered as potential candidates for space application, due to the fact that their core devices (e.g. magnetic tunnel junction, MTJ) are intrinsic insensitive to radiation effects. However, their CMOS peripheral circuits are still vulnerable to radiation effects.
Tingting Pang +5 more
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