Results 311 to 320 of about 72,269 (350)
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VLSI Processing, Radiation, and Hardening
IEEE Transactions on Nuclear Science, 1978Process-induced radiation damage to silicon dioxide films is expected to be commonplace for VLSI circuit fabrication. This might be expected to be most serious for the production of radiation-hardened VLSI. In this paper, the oxide damage due to ion processing is reviewed and the radiation levels associated with advanced lithographic techniques are ...
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Radiation hardening in Zircaloy-2
Radiation Effects, 1973Abstract Annealed Zircaloy-2 was exposed to fast neutron fluences in the range 0.46 to 6.71 × 1019 nvt, E > 1 MeV, at temperatures of up to 450°C. The level of radiation hardening, as measured by the change in yield stress after irradiation, increased with irradiation temperature at least up to 380°C.
K. U. Snowden, K. Veevers
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Radiation Hardening Applications
1972Two approaches to the fabrication of radiation-hard dielectrics, utilizing silicon nitride, have been studied; silicon nitride sandwich structure and silicon oxynitride. Radiation-resistant devices investigated to date have included capacitors (MNS and MNOS), MNOS-FETs, bipolar transistors and operational amplifiers.
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Radiation and anneal hardening in vanadium
Journal of Nuclear Materials, 1972Abstract The tensile properties at room temperature in vanadium irradiated to a fast neutron fluence of 8.2 × 10 19 n/cm 2 at about 200 °C were investigated in terms of changes in microstructure with the irradiation and subsequent heat treatment.
K. Shiraishi, K. Fukaya, Y. Katano
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The avenue of FDSOI radiation hardening
2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2014Advanced FDSOI technology has inherent resistance to transient ionizing radiation effects and better Single Event Effect (SEE) tolerance. In the meantime, total dose hardening is now the biggest challenging for the cutting-edge FDSOI technology. Three TID hardening techniques are discussed in this paper. The effects of buried oxide modification, device
Kai Zhao, Zhongli Liu, Fang Yu
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Radiation Hardened Bandgap References
2015As a key component in the proposed multistage noise-shaping (MASH) \(\Delta\Sigma\) time-to-digital converter (TDC) system, the total ionizing dose (TID) radiation tolerance of the bandgap reference in deep-submicron -complementary metal–oxide–semiconductor (CMOS) technology is generally limited by the radiation-introduced leakage current in diodes. An
Ying Cao, Paul Leroux, Michiel Steyaert
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Radiation Hardening of Diagnostic Components
1996The peculiarity of the diagnostic system in fusion reactor in particular consist in rather hard radiation environment for some diagnostic components located near the plasma. Intense fluxes of neutron and gamma radiation can result in electric property degradation of conductors and insulating materials, in the change of optical properties of lenses ...
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Radiation Hardening, Reliability and Redundancy
2018There are at least three factors that affect spacecraft orbit life. These are (1) the amount of radiation protection provided for the orbit altitude of the spacecraft, (2) the reliability of the components and of the spacecraft system and (3) the redundancy built into the spacecraft.
George Sebestyen +3 more
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Radiation‐Hardened Optoelectronic Components
Aircraft Engineering and Aerospace Technology, 1992HONEYWELL has developed the world's first range of radiation‐hardened LEDs and photodiodes which operate effectively during and after radiation exposure. The components have many applications for position and object sensing in missiles, aircraft, spacecraft, nuclear installations and hard military environments, where standard components have been ...
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