Results 301 to 310 of about 2,059,339 (331)
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IEEE Transactions on Circuits and Systems Part 1: Regular Papers, 2019
With downscaling of process technology, conventional memories encounter challenges, such as soaring static power, low reliability, and charge sharing effect induced by radiation effects.
Bi Wang +7 more
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With downscaling of process technology, conventional memories encounter challenges, such as soaring static power, low reliability, and charge sharing effect induced by radiation effects.
Bi Wang +7 more
semanticscholar +1 more source
Journal of Applied Physics, 2019
A series of Yb-doped silica glasses containing equimolar amounts of P2O5 and Al2O3 were prepared using a sol–gel method combined with high-temperature sintering. Raman spectroscopy confirmed the formation of AlPO4 join with a P/Al ratio of 1.
Fan Wang +6 more
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A series of Yb-doped silica glasses containing equimolar amounts of P2O5 and Al2O3 were prepared using a sol–gel method combined with high-temperature sintering. Raman spectroscopy confirmed the formation of AlPO4 join with a P/Al ratio of 1.
Fan Wang +6 more
semanticscholar +1 more source
IEEE Transactions on Reliability, 2019
This paper presents two novel memory cell designs that can completely tolerate double-node upsets. First, a layout dependent cell is proposed. Since the cell has many redundant storage nodes, the cell achieves the following robustness: 1) In the case of ...
Aibin Yan +4 more
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This paper presents two novel memory cell designs that can completely tolerate double-node upsets. First, a layout dependent cell is proposed. Since the cell has many redundant storage nodes, the cell achieves the following robustness: 1) In the case of ...
Aibin Yan +4 more
semanticscholar +1 more source
Radiation-Hardening Techniques for Spin Orbit Torque-MRAM Peripheral Circuitry
IEEE transactions on magnetics, 2018Magnetic random access memory (MRAM) is experimentally proved intrinsically immune to radiation effects including heavy-ion irradiation and total ion dose as the data are represented by the spin instead of charges.
Bi Wang +5 more
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Design of CMOS integrated circuits for radiation hardening and its application to space electronics
International Conference on ASIC, 2019This paper addresses some design tricks that allow canceling - or at least reducing - the sensitivity of silicon integrated circuits to radiation effects. Both analog and digital circuits are here addressed.
Y. Deval, H. Lapuyade, F. Rivet
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SET analysis and radiation hardening techniques for CMOS LNA topologies
Semiconductor Science and Technology, 2018This paper analyses the effects of single-event transients (SETs) on CMOS low noise amplifiers (LNA) designed for a 0.18 μ m technology. Two well-known topologies, the common-source and common-gate cascodes, have been analysed when heavy ions strike the ...
S. Mateos-Angulo +4 more
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A radiation-hardening Ta/Ta2O5-x/Al2O3/InGaZnO4 memristor for harsh electronics
Applied Physics Letters, 2018In this work, the electrical characteristics of Ta/Ta2O5-x/Al2O3/InGaZnO4 memristor devices under radiation are studied. The measured I-V curves indicate that this type of device has excellent stability and uniformity after radiation with a total ...
Jingjuan Wang +14 more
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Radiation effects and hardening of electronic components and systems: an overview
Indian Journal of Physics, 2023Arindam Ray
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Journal of Inorganic and Organometallic Polymers and Materials, 2020
A. Kozlovskiy +5 more
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A. Kozlovskiy +5 more
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Overview of Radiation Effects on Silica-Based Optical Fibers and Fiber Sensors
IEEE Transactions on Nuclear ScienceThis review focuses on silica-based optical fibers (OFs), guiding light through the total internal reflection (TIR) mechanism, that are currently used in telecommunications and sensor networks.
S. Girard +14 more
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