Results 101 to 110 of about 25,276 (306)

Flexible Ag2Se‐Based Thermoelectrics: Fundamentals, Processing, and Device Applications

Advanced Materials, EarlyView.
Ag2Se‐based thermoelectrics are reviewed from fundamental transport mechanisms to flexible device integration. Crystal structure, defect chemistry, and band features are correlated with performance optimization strategies and scalable fabrication routes.
Jie Qin, Yuchen Yang, Huangshui Ma, Yong Du, Min Hong, Qinfei Ke   +5 more
wiley   +1 more source

Improvement of the radiation hardness of SIMOX buried layers using nitrogen implantation

, 2005
An investigation of hardening the buried oxides (BOX) in separation by implanted oxygen (SIMOX) silicon-on-insulator (SOI) wafers to total-dose irradiation has been made by implanting nitrogen into the BOX layers with a constant dose at different ...
Zheng ZS, Zhang EX, Liu ZL, Ma HZ, Zhang ZX, Zheng, ZS, Chinese Acad Sci, Inst Semicond, Microelect R&D Ctr, Beijing 100083, Peoples R China. 电子邮箱地址: zszheng@red.semi.ac.cn, Zhang GQ, Li GH, Wang X, Li N   +9 more
core  

Improved neutron radiation hardness for Si detectors: Application of low resistivity starting material and or manipulation of N-eff by selective filling of radiation-induced traps at low temperatures

, 1999
Radiation-induced electrical changes in both space charge region (SCR) of Si detectors and bulk material (BM) have been studied for samples of diodes and resistors made on Si materials with different initial resistivities. The space charge sign inversion
Dezillie B, Eremin V, Li Z, Li CJ, Bruzzi M, Pandey SU, Dezillie B,Brookhaven Natl Lab,Upton,NY 11973 USA., Pirollo S   +7 more
core   +1 more source

Hydrogenated Amorphous Silicon Charge-Selective Contact Devices on a Polyimide Flexible Substrate for Dosimetry and Beam Flux Measurements

Sensors
Hydrogenated amorphous silicon (a-Si:H) devices on flexible substrates are currently being studied for application in dosimetry and beam flux measurements. The necessity of in vivo dosimetry requires thin devices with maximal transparency and flexibility.
Mauro Menichelli, Saba Aziz, Aishah Bashiri, Marco Bizzarri, Clarissa Buti, Lucio Calcagnile, Daniela Calvo, Mirco Caprai, Domenico Caputo, Anna Paola Caricato, Roberto Catalano, Massimo Cazzanelli, Roberto Cirio, Giuseppe Antonio Pablo Cirrone, Federico Cittadini, Tommaso Croci, Giacomo Cuttone, Giampiero de Cesare, Paolo De Remigis, Sylvain Dunand, Michele Fabi, Luca Frontini, Catia Grimani, Mariacristina Guarrera, Hamza Hasnaoui, Maria Ionica, Keida Kanxheri, Matthew Large, Francesca Lenta, Valentino Liberali, Nicola Lovecchio, Maurizio Martino, Giuseppe Maruccio, Giovanni Mazza, Anna Grazia Monteduro, Arianna Morozzi, Augusto Nascetti, Stefania Pallotta, Andrea Papi, Daniele Passeri, Maddalena Pedio, Marco Petasecca, Giada Petringa, Francesca Peverini, Pisana Placidi, Matteo Polo, Alberto Quaranta, Gianluca Quarta, Silvia Rizzato, Federico Sabbatini, Leonello Servoli, Alberto Stabile, Cinzia Talamonti, Jonathan Emanuel Thomet, Luca Tosti, Monica Setia Vasquez Mora, Mattia Villani, Richard James Wheadon, Nicolas Wyrsch, Nicola Zema   +59 more
doaj   +1 more source

Radiation Hardness Study of Single-Photon Avalanche Diode for Space and High Energy Physics Applications. [PDF]

Sensors (Basel), 2022
Wu ML, Ripiccini E, Kizilkan E, Gramuglia F, Keshavarzian P, Fenoglio CA, Morimoto K, Charbon E.   +7 more
europepmc   +1 more source

Direct Synthesis of High‐Valence Protein@UiO‐66 Composites: Linking Crystallization Pathways to Protein Encapsulation

Advanced Materials, EarlyView.
This work reports a direct, biocompatible method to synthesize UiO‐66, enabling one‐step encapsulation of proteins without compromising crystallinity or activity. Using advanced in situ and ex situ techniques, the study reveals that proteins integrate concurrently with MOF growth, forming crystalline protein@UiO‐66 nanoparticles, and provide insight ...
Jesús Cases Díaz, Jana Glatz, Elisa Merced Olivas, Ramon Pons, Joseph P. Patterson, Mónica Giménez‐Marqués   +5 more
wiley   +1 more source

Sensitivity of Total-Dose Radiation Hardness of SIMOX Buried Oxides to Doses of Nitrogen Implantation into Buried Oxides

, 2005
In order to improve the total-dose radiation hardness of the buried oxides(BOX) in the structure of separa tion-by-implanted-oxygen(SIMOX) silicon-on-insulator(SOI), nitrogen ions are implanted into the buried oxides with two different doses,2 × 1015 and
Zheng Zhongshan, Liu Zhongli, Li Guohua, Zhang Guoqiang, Zhang Zhengxuan, Li Ning, Zhang Enxia, Ma Hongzhi, Wang Xi   +8 more
core  

Studying radiation hardness of a cadmium tungstate crystal based radiation detector

, 2016
The given article considers radiation hardness of an X-ray detector used in production of non-destructive testing instruments and inspection systems. In the course of research, experiments were carried out to estimate radiation hardness of a detector ...
Shtein, Mikhail Mikhailovich, Tkacheva, T. V., Stepanov, Sergey Aleksandrovich, Usachev, E. Yu., Smekalin, Leonid Fedorovich, Zatonov, Ivan Andreevich   +5 more
core   +1 more source

Elephant‐Skin‐Inspired Porous Cementitious Tiles with Programmable Crack Networks for Passive Cooling

Advanced Materials, EarlyView.
Elephant‐skin‐inspired crack networks are programmed in porous diatomaceous earth (DE)‐cement composites using substrate‐guided, stress‐concentration induced fracture. The resulting crack lattices act as capillary conduits that redistribute water, while the porous matrix stores moisture.
Qingya Huang, Kun‐Hao Yu, Ji Yoon Bae, Yunchan Lee, Dorit Aviv, Shu Yang   +5 more
wiley   +1 more source

Radiation hardness characteristic of N-implanted and F-implanted SIMOX/NMOSFET

, 2007
Radiation hardness of SIMOX(separation by implanted oxygen)/NMOSFET by implanting N and F ion has been carefully studied in this paper.Both N and F ion implantation can reduce hole traps in the buried oxide and the interfacial regions,which consequently ...
WANG Ningjuan, ZHANG GuoQiang, LIU Zhongli, YU Fang, LI Ning, Zheng Zhongshan, LI Guohua   +6 more
core