Results 261 to 270 of about 2,199,437 (323)

Stability of TPU/PP Blends Exposed to UV Radiation for Industrial Applications. [PDF]

open access: yesPolymers (Basel)
Vargas-Isaza C   +4 more
europepmc   +1 more source

Proton radiation hardness and its loss mechanism of Cu2ZnSn(S,Se)4 thin film solar cells

Applied Physics Letters, 2023
Kesterite Cu2ZnSn(S,Se)4 (CZTSSe) have proven to be promising materials for photovoltaic applications. The current state-of-the-art CZTSSe photovoltaic device improvements in efficiency have been hampered by difficulties in increasing open circuit ...
Yunteng Zhao   +12 more
semanticscholar   +1 more source

In Situ Radiation Hardness Study of Amorphous Zn-In-Sn-O Thin-Film Transistors with Structural Plasticity and Defect Tolerance.

ACS Applied Materials and Interfaces, 2023
Solution-processed metal-oxide thin-film transistors (TFTs) with different metal compositions are investigated for ex situ and in situ radiation hardness experiments against ionizing radiation exposure. The synergetic combination of structural plasticity
Dongil Ho   +8 more
semanticscholar   +1 more source

γ-ray Radiation Hardness of CsPbBr3 Single Crystals and Single-Carrier Devices.

ACS Applied Materials and Interfaces, 2022
The superior environmental stability of all-inorganic metal halide perovskites compared to their organic-inorganic counterparts makes them more promising in practical applications.
Lei Gao, Jia‐Lin Sun, Qiang Li, Q. Yan
semanticscholar   +1 more source

Radiation hardness of gallium nitride

IEEE Transactions on Nuclear Science, 2002
Gallium nitride (GaN) light emitting diodes (LEDs) were irradiated at room temperature with electrons in the range 300-1400 keV. A threshold energy of 440 keV was observed, corresponding to a gallium atom displacement energy of 19/spl plusmn/2 eV. This value of the displacement energy compares with that of silicon carbide but is smaller than that of ...
Ionascut-Nedelcescu, A.   +5 more
openaire   +1 more source

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