Results 231 to 240 of about 27,266 (287)

A memristor-based unified PUF and TRNG chip with a concealable ability for advanced edge security. [PDF]

Sci Adv
Li X, Lin B, Gao B, Lu Y, Yang S, Su Z, Shen TY, Tang J, Qian H, Wu H.   +9 more
europepmc   +1 more source

Harnessing Physical Entropy Noise in Structurally Metastable 1T' Molybdenum Ditelluride for True Random Number Generation. [PDF]

Nano Lett
Liu Y, Liu P, Wen Y, Liang Z, Liu S, Song L, Pei J, Fan X, Ma T, Wang G, Gao S, Pun KP, Chen X, Hu G.   +13 more
europepmc   +1 more source

Memristive True Random Number Generator for Security Applications. [PDF]

Sensors (Basel)
Zhao X, Chen LW, Li K, Schmidt H, Polian I, Du N.   +5 more
europepmc   +1 more source

In-situ physical adjoint computing in multiple-scattering electromagnetic environments for wave control. [PDF]

Nat Commun
Guillamon J, Wang CZ, Lin Z, Kottos T.
europepmc   +1 more source

Chaos-Based Color Image Encryption with JPEG Compression: Balancing Security and Compression Efficiency. [PDF]

Entropy (Basel)
Zhang W, Zheng X, Xing M, Yang J, Yu H, Zhu Z.   +5 more
europepmc   +1 more source

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Random Telegraph Noise in Carbon Nanotube Peapod Transistors

Fullerenes, Nanotubes and Carbon Nanostructures, 2005
Abstract We investigated the switching of resistance between two discrete values, known as random telegraph noise (RTN), observed in carbon nanotube peapod transistors [single‐walled carbon nanotubes (SWNTs), C60‐peapods, and Cs‐encapsulated SWNTs (so‐called Cs‐peapods)]. By analyzing the features of the RTN, we suggest that this noise for SWNTs is due
Jhang, S., Lee, S., Lee, D., Park, Y., Jeong, G., Hirata, T., Hatakeyama, R., Dettlaff, U., Roth, S., Kabir, M., Campbell, E.   +10 more
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Random Telegraph Noise in Flash Memories

2020
We review the impact of random telegraph noise (RTN) on the operation of NOR and NAND Flash memories. We begin with a comprehensive set of experimental data for the RTN distribution within Flash arrays, including cycling and temperature dependences, moving then to the physical interpretation of the phenomenon and model description.
A. Sottocornola Spinelli, C. Monzio Compagnoni, A. L. Lacaita   +2 more
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Random Telegraph Noise Under Switching Operation

2020
This chapter deals with random telegraph noise (RTN) under switching operation. We measured and modeled RTN by using ring oscillator-based (RO-based) test chips. They were fabricated in three different processes of 65 nm bulk, 65 nm FDSOI, and 40 nm bulk.
Kazutoshi Kobayashi, Mahfuzul Islam, Takashi Matsumoto, Ryo Kishida   +3 more
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RANDOM TELEGRAPH NOISE IN MICROSTRUCTURES

Noise in Physical Systems and 1/F Fluctuations, 1998
The theory of random current switchings in conductors with S -type current-voltage characteristic is presented. In the range of bistability, the mean time spent by the system in the low-current state before a transition to the high-current state occurs, {bar {tau}}{sub l} , decreases with voltage, and that for the high-current state, {bar {tau}}{sub h}
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Macroscopic Random Telegraph Noise

Fluctuation and Noise Letters, 2019
It is proposed that macroscopic telegraph noise in superconductors is due to dynamic coexistence of ordered and disordered vortex phases (DP and OP) created by edge contamination mechanism. A novel, robust, with bias insensitive rates, macroscopic telegraph noise in low Ca-doped manganites is ascribed to the dynamic current redistribution assisted by ...
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