Results 241 to 250 of about 27,266 (287)
Some of the next articles are maybe not open access.
Defect-Based Compact Modeling of Random Telegraph Noise
2020This chapter handles compact modeling of RTN and BTI with the main focus on the statistical component of reliability. A comprehensive overview of the State-of-the-Art(SotA) BTI distribution models will be given. Of these, the Exponential-Poisson distribution, describing BTI from the defect-centric point of view, is considered as the SotA.
Weckx, Pieter +4 more
openaire +2 more sources
Shot-Noise-Induced Random Telegraph Noise in Shuttle Current
Physical Review Letters, 2002Random telegraph noise in the electric current produced by shot noise is predicted for an array of movable colloid particles by Monte Carlo and molecular dynamics calculations. The electron transport is attributed to the shuttle mechanism where moving colloid particles carry charges. The colloid-particle motion induced by the source-drain voltage shows
openaire +3 more sources
Random Telegraph Noise in Laser-Assisted Collisions
Europhysics Letters (EPL), 1987We present a treatment of potential scattering of a charged particle in a laser field undergoing jumplike fluctuations in amplitude, phase or frequency. Our method allows the inclusion of these three types of noise in a unified way for the case of random telegraph and, more generally, of pre-Gaussian statistics.
Francken, Philippe, Joachain, Charles
openaire +1 more source
Random telegraph noise analysis in time domain
Review of Scientific Instruments, 2000A new procedure for analysis of random telegraph signals in time domain has been developed and applied to the analysis of voltage fluctuations in the current induced dissipative state in superconducting thin films. The procedure, based entirely on the difference in the statistical properties of discrete Marcovian telegraph fluctuations and Gaussian ...
Y. Yuzhelevski, M. Yuzhelevski, G. Jung
openaire +1 more source
Random telegraphic noise in double barrier systems
Applied Physics Letters, 1993A random telegraphic noise (RTN) in a resonant tunneling device (RTD) has been found through a self-consistent particle Monte Carlo (MC) simulation with model quantum dynamics. The onset of RTN coincides with the onset of tunneling conduction, and with the onset of the low-current valley region of the current-voltage (I-V) characteristic.
R. E. Salvino, F. A. Buot
openaire +1 more source
Spectrum of anomalous random telegraph noise
Journal of Applied Physics, 1993The alternate capture and emission of electrons at an individual defect site generates discrete switching in resistance, referred to as a random telegraph signal (RTS). Recent experiments indicate that some defects might have two mutually exclusive emission modes with distinct emission rates, which result in the anomalous RTS: a rapid-switching RTS ...
openaire +1 more source
Random telegraph noise of deep-submicrometer MOSFETs
IEEE Electron Device Letters, 1990The random telegraph noise exhibited by deep-submicrometer MOSFETs with very small channel area ( >
K.K. Hung, P.K. Ko, C. Hu, Y.C. Cheng
openaire +1 more source
Resistive Switching Devices Producing Giant Random Telegraph Noise
IEEE Electron Device Letters, 2022Resistive switching (RS) has been studied for several applications such as information storage and bio-inspired computing, although reliability issues still prevent their massive use. In this work, we present a novel observation of trapping activity that imposes giant random conductance fluctuations, up to 3 orders of magnitude, resembling RTN in RS ...
Thales Becker +5 more
openaire +2 more sources
On the amplitude of random telegraph noise
Proceedings of Technical Program of 2012 VLSI Technology, System and Application, 2012A simple physical model is developed to show that the “hole-in-the-inversion-layer” model for RTN is in fact correct. This simple model allows RTN amplitude for future devices to be predicted intuitively and quantitatively. The model provides additional incite into the physics of RTN in MOSFETs.
K. P. Cheung +3 more
openaire +1 more source
Random telegraph noise in a nickel nanoconstriction
Journal of Applied Physics, 2003Nickel nanoconstrictions about 20 nm wide produced by electron beam lithography in a 60 nm nickel film exhibit resistivities in the kΩ range with a nonlinear and asymmetric I–V characteristic. Noise spectra of the contacts sometimes deviate from 1/f behavior due to random telegraph fluctuations at room temperature with a frequency in the 10 Hz range ...
O. Céspedes +4 more
openaire +1 more source