Results 41 to 50 of about 27,266 (287)
A Complex Model via Phase-Type Distributions to Study Random Telegraph Noise in Resistive Memories
A new stochastic process was developed by considering the internal performance of macro-states in which the sojourn time in each one is phase-type distributed depending on time.
Juan E. Ruiz-Castro +3 more
doaj +1 more source
Suppression of Decoherence and Disentanglement by the Exchange Interaction
Entangled qubit pairs can serve as a quantum memory or as a resource for quantum communication. The utility of such pairs is measured by how long they take to disentangle or decohere. To answer the question of whether qubit-qubit interactions can prolong
Alex Lang +7 more
core +1 more source
Harvesting random telegraph noise for true random number generation
Peer ...
F.J. Rubio-Barbero +4 more
openaire +3 more sources
Magnonics is a rapidly developing subfield of spintronics, which deals with devices and circuits that utilize spin currents carried by magnons - quanta of spin waves. Magnon current, i.e.
Balandin, A. A. +4 more
core +1 more source
Novel readout circuit architecture for CMOS image sensors minimizing RTS noise [PDF]
This letter presents a novel readout architecture and its associated readout sequence for complementary metal–oxide– semiconductor (CMOS) image sensors (CISs) based on switch biasing techniques in order to reduce noisy pixel numbers induced by in-pixel
Magnan, Pierre +1 more
core +1 more source
Conduction Mechanism Analysis of Abrupt- and Gradual-Switching InGaZnO Memristors
In this work, two types of InGaZnO (IGZO) memristors were fabricated to confirm the conduction mechanism and degradation characteristics of memristors with different electrode materials.
Woo Sik Choi +3 more
doaj +1 more source
An idea of designing novel sensors is proposed by creating appropriate Schottky barriers and vacancies between isomorphous Core‐CuOii/ Shell‐CuOi secondary microspheres and enhancing catalytic and spill‐over effects, and electronegativity via spontaneous biphasic separation, self‐assembly, and trace‐Ni‐doping.
Bala Ismail Adamu +8 more
wiley +1 more source
Low Frequency Noise Reduction Using Multiple Transistors With Variable Duty Cycle Switched Biasing
Randomization of the trap state of defects present at the gate Si-SiO2 interface of MOSFET is responsible for the low-frequency noise phenomena such as random telegraph signal (RTS) and 1/f noise.
Kapil Jainwal, Kushal Shah, Mukul Sarkar
doaj +1 more source
Equivalent qubit dynamics under classical and quantum noise
We study the dynamics of quantum systems under classical and quantum noise, focusing on decoherence in qubit systems. Classical noise is described by a random process leading to a stochastic temporal evolution of a closed quantum system, whereas quantum ...
H. J. Charmichael +7 more
core +1 more source
Synchrotron Radiation for Quantum Technology
Materials and interfaces underpin quantum technologies, with synchrotron and FEL methods key to understanding and optimizing them. Advances span superconducting and semiconducting qubits, 2D materials, and topological systems, where strain, defects, and interfaces govern performance.
Oliver Rader +10 more
wiley +1 more source

