Results 71 to 80 of about 946 (248)
Visualisation techniques of Random Telegraph Signals in MOSFETS
In the study of LF noise in MOSFETS, it has become clear that Random Telegraph Signals (RTS) are dominant. When a MOSFET is subjected to large-signal excitation, the RTS noise is influenced. In this paper, we present different visualizations of the transient behaviour of the RTS.
van der Wel, A.P. +4 more
openaire +2 more sources
Spontaneous helical alignment of smooth muscle cells is induced within resistance‐vessel‐sized channels patterned within a hydrogel. The extent of the cells’ orientation angle is dependent on the presence and composition of ECM proteins lining the channel wall and cell seeding density.
Victoria D. Vest +5 more
wiley +1 more source
Exploration of the non-zero universe in instantaneous noise-based logic [PDF]
Instantaneous noise-based logic (INBL) leverages the products and superpositions of uncorrelated noise signals to construct a 2^N-dimensional Hilbert space (‘hyperspace’).
Nasir Kenarangui +2 more
doaj +1 more source
New Source of Random Telegraph Signal in CMOS Image Sensors
This paper presents a new source of Random Telegraph Signal (RTS) due to meta-stable Shockley-Read-Hall (SRH) generation mechanism at depleted oxide interfaces in CMOS Image Sensors (CIS). The study investigates the nature of RTS, distinguishing between those caused by MOSFET conductance fluctuations (MOSFET-RTS) and those caused by discrete variations
Goiffon, Vincent +4 more
openaire +2 more sources
The Y supersaturation in the [Ba‐Cu(I/II)‐O] transient liquid composition is the driving force toward YBCO nucleation and growth in TLAG. Tuning the initial (Ba:Cu) molar ratio in the ink composition determines the YBCO epitaxial nucleation through supersaturation control.
Lavinia Saltarelli +12 more
wiley +1 more source
Analysis of leakage current noise in thin-gate dielectric devices [PDF]
In MOSFETs, the gate leakage current induced by direct tunneling through the gate oxide layer has become a critical factor affecting device reliability and power consumption.
Bing Ding +3 more
doaj +1 more source
Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics
The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades +7 more
wiley +1 more source
2D α‐Co(OH)2 interleaved with Mo species displays an appealing dual functionality for the production and use of green hydrogen.Mo incorporation greatly benefits the electrochemical behaviour in Oxygen Evolution Reaction for H2 production, while the magnetocaloric response at liquid H2 temperature paves the way for alternative cryogenic refrigerants ...
Daniel Muñoz‐Gil +14 more
wiley +1 more source
This study demonstrates a self‐assembly process to generate free‐standing piezoelectric nanomembranes, forming ultracompact microtubular acoustic wave sensors and actuators. The miniaturized 3D piezoelectric platform reported in this work can be applied in telecommunication, energy harvesting, and acoustofluidics. Moreover, the 3D self‐assembly can add
Raphaël C. L‐M. Doineau +9 more
wiley +1 more source
Radiation hardness of MALTA2 monolithic CMOS imaging sensors on Czochralski substrates
MALTA2 is the latest full-scale prototype of the MALTA family of Depleted Monolithic Active Pixel Sensors (DMAPS) produced in Tower Semiconductor 180 nm CMOS sensor imaging technology. In order to comply with the requirements of high energy physics (HEP)
Milou van Rijnbach +31 more
doaj +1 more source

