Results 71 to 80 of about 2,511 (146)

From Junk DNA to Genomic Treasure: Impacts of Transposable Element DNA, RNA, and Protein in Mammalian Development and Disease

open access: yesWIREs RNA, Volume 16, Issue 4, July/August 2025.
Transposable elements shape development and disease at every level of the central dogma by functioning as regulatory DNA, functional RNA, and, in some cases, protein, thus transforming our view of them from junk to essential genomic players. ABSTRACT Transposable elements (TEs) have hijacked cellular machineries to replicate and spread throughout host ...
Ten D. Li   +2 more
wiley   +1 more source

Evaluation of a gate capacitance in the sub-aF range for a chemical field-effect transistor with a silicon nanowire channel

open access: yes, 2011
An evaluation of the gate capacitance of a field-effect transitor (FET) whose channel length and width are several ten nanometer, is a key point for sensors applications. However, experimental and precise evaluation of capacitance in the aF range or less
Clement, Nicolas   +3 more
core   +1 more source

Ultra‐Sensitive Short‐Wave Infrared Single‐Photon Detection Using a Silicon Single‐Electron Transistor

open access: yesAdvanced Electronic Materials, Volume 11, Issue 6, May 2025.
This paper presents an innovative approach for short‐wave infrared single‐photon detection, achieving a remarkable noise‐equivalent power of 10⁻19 W Hz−1/2 using silicon single‐electron transistors. The detection relies on shift in SET current peaks and occurrence of random telegraph signals under light irradiation, unlocks new possibilities for ...
Pooja Sudha   +3 more
wiley   +1 more source

The Discrete Noise of Magnons

open access: yes, 2018
Magnonics is a rapidly developing subfield of spintronics, which deals with devices and circuits that utilize spin currents carried by magnons - quanta of spin waves. Magnon current, i.e.
Balandin, A. A.   +4 more
core   +1 more source

One-by-one trap activation in silicon nanowire transistors

open access: yes, 2010
Flicker or 1/f noise in metal-oxide-semiconductor field-effect transistors (MOSFETs) has been identified as the main source of noise at low frequency. It often originates from an ensemble of a huge number of charges trapping and detrapping.
A Fujiwara   +17 more
core   +1 more source

A novel and precise time domain description of MOSFET low frequency noise due to random telegraph signals

open access: yes, 2010
Nowadays, random telegraph signals play an important role in integrated circuit performance variability, leading for instance to failures in memory circuits.
da Silva R.   +5 more
core   +1 more source

Deep neural network analysis models for complex random telegraph signals. [PDF]

open access: yesSci Rep, 2023
Robitaille M   +4 more
europepmc   +1 more source

Finite-temperature Fermi-edge singularity in tunneling studied using random telegraph signals

open access: yes, 1996
We show that random telegraph signals in metal-oxide-silicon transistors at millikelvin temperatures provide a powerful means of investigating tunneling between a two-dimensional electron gas and a single defect state.
A.B. Fowler   +36 more
core   +1 more source

Post-processing of real-time quantum event measurements for an optimal bandwidth. [PDF]

open access: yesSci Rep, 2023
Kerski J   +9 more
europepmc   +1 more source

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