Results 81 to 90 of about 277 (105)
We generated traps inside gate oxide in gate–drain overlap region of recess channel type dynamic random access memory (DRAM) cell transistor through Fowler–Nordheim (FN) stress, and observed gate induced drain leakage (GIDL) current both in time ...
Heesang Kim +8 more
core +1 more source
RTS Noise Characterization in Single-Photon Avalanche Diodes
Random telegraph signal (RTS) behavior is reported and characterized in the dark count rate of single-photon avalanche Diodes (SPADs). The RTS is observed in a SPAD fabricated in 0.8-mu m CMOS technology and in four proton-irradiated SPADs designed and ...
Fishburn, Matthew +4 more
core +1 more source
Euclid is an ESA mission to map the geometry of the dark Universe with a planned launch date in 2020. Euclid is optimised for two primary cosmological probes, weak gravitational lensing and galaxy clustering. They are implemented through two science instruments on-board Euclid, a visible imager (VIS) and a near-infrared spectro-photometer (NISP), which
Kohley, R. +8 more
openaire +2 more sources
Automatic Detection and Correction of Random Telegraph Signal Artifacts in Earth Observation Images [PDF]
Satellite optical and infrared images can be degraded by a piecewise-constant random artifact called random telegraph signal (RTS), which is caused by unstable semiconductor defects in the photodetector. In this letter, we aim at proposing new techniques
Sylvain Lucas +2 more
exaly +2 more sources
Evidence of a Novel Source of Random Telegraph Signal in CMOS Image Sensors [PDF]
This letter reports a new source of dark current random telegraph signal in CMOS image sensors due to meta-stable Shockley-Read-Hall generation mechanism at oxide interfaces.
Vincent Goiffon +2 more
exaly +2 more sources
Modeling random telegraph noise under switched bias conditions using cyclostationary rts noise [PDF]
In this paper, we present measurements and simulation of random telegraph signal (RTS) noise in n-channel MOSFETs under periodic large signal gate-source excitation (switched bias conditions).
L K J Vandamme, Bram Nauta
exaly +3 more sources
Localization of Dark Current Random Telegraph Signal sources in pinned photodiode CMOS Image Sensors [PDF]
This work presents an analysis of Dark Current Random Telegraph Signal (DC-RTS) in CMOS Image Sensors (CIS). The objective is to provide new insight on RTS in modern CIS by determining the localization of DC-RTS centers and the oxide interfaces involved.
Clementine Durnez +2 more
exaly +2 more sources
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1/f Noise and RTS(Random Telegraph Signal) Errors in Sense Amplifiers
2007 IEEE Workshop on Microelectronics and Electron Devices, 2007The modeling of noise in the frequency domain gives the mean square noise current of a transistor as a function of frequency. RTS in nanoscale devices is easiest modeled as an instantaneous fluctuation in threshold voltage due to the capture and emission of traps.
Drake A. Miller +2 more
openaire +1 more source
Journal of Instrumentation, 2015
CMOS Active pixel sensors (CMOS APS) are attractive for use in the innermost layers of charged particle trackers, due to their good tradeoffs among the key performances. However, CMOS APS can be greatly influenced by random telegraph signal (RTS) noise, which can cause particle tracking or energy calculation failures.
R. Zheng +9 more
openaire +1 more source
CMOS Active pixel sensors (CMOS APS) are attractive for use in the innermost layers of charged particle trackers, due to their good tradeoffs among the key performances. However, CMOS APS can be greatly influenced by random telegraph signal (RTS) noise, which can cause particle tracking or energy calculation failures.
R. Zheng +9 more
openaire +1 more source
Subthreshold Leakage Due to 1/F Noise and Rts(Random Telegraph Signals)
2007 IEEE Workshop on Microelectronics and Electron Devices, 2007An analysis of subthreshold leakage predicts a Gaussian or Normal distribution on large devices but a distorted distribution is possible on small devices. 1/f noise due to RTS signals on large well behaved devices will have a Gaussian distribution and cause a Gaussian current distribution under normal and subthreshold operating conditions.
Drake A. Miller +2 more
openaire +1 more source

