Results 81 to 90 of about 2,532 (143)

Radiation hardness of MALTA2 monolithic CMOS imaging sensors on Czochralski substrates

open access: yesEuropean Physical Journal C: Particles and Fields
MALTA2 is the latest full-scale prototype of the MALTA family of Depleted Monolithic Active Pixel Sensors (DMAPS) produced in Tower Semiconductor 180 nm CMOS sensor imaging technology. In order to comply with the requirements of high energy physics (HEP)
Milou van Rijnbach   +31 more
doaj   +1 more source

Low‐ and High‐Frequency Noise in LEDs

open access: yesphysica status solidi (a), Volume 222, Issue 17, September 2025.
The results of optical noise measurements for commercially available blue light‐emitting diodes in a range from kHz to MHz are reported. The noise spectra decomposition into components according to the theoretical model is performed. The coincidence of the experimental results with 1/fγ model for the low‐frequency range is proved and a fitting is made.
Danylo Bohomolov   +2 more
wiley   +1 more source

A novel and precise time domain description of MOSFET low frequency noise due to random telegraph signals

open access: yes, 2010
Nowadays, random telegraph signals play an important role in integrated circuit performance variability, leading for instance to failures in memory circuits.
da Silva R.   +5 more
core   +1 more source

Classifying Power Quality Issues in Railway Electrification Systems Using a Nonsubsampled Contourlet Transform Approach

open access: yesEngineering Reports, Volume 7, Issue 8, August 2025.
Railway electrification systems indeed have unique challenges due to variable power demand and dynamic train operations. Power quality (PQ) monitoring for high‐speed trains (HSTs) is essential to guarantee the effectual and unfailing operation of the ESs.
Pampa Sinha   +6 more
wiley   +1 more source

Evaluation of a gate capacitance in the sub-aF range for a chemical field-effect transistor with a silicon nanowire channel

open access: yes, 2011
An evaluation of the gate capacitance of a field-effect transitor (FET) whose channel length and width are several ten nanometer, is a key point for sensors applications. However, experimental and precise evaluation of capacitance in the aF range or less
Clement, Nicolas   +3 more
core   +4 more sources

RTS noise reduction of CMOS image sensors using amplifier-selection pixels [PDF]

open access: yes, 2013
This paper describes a RTS (random telegraph signal) noise reduction technique for an active pixel CMOS image sensor (CIS) with in-pixel selectable dual source-follower amplifiers.
Kagawa, Kiichiro   +4 more
core   +1 more source

Finite-temperature Fermi-edge singularity in tunneling studied using random telegraph signals

open access: yes, 1996
We show that random telegraph signals in metal-oxide-silicon transistors at millikelvin temperatures provide a powerful means of investigating tunneling between a two-dimensional electron gas and a single defect state.
A.B. Fowler   +36 more
core   +1 more source

Deep neural network analysis models for complex random telegraph signals. [PDF]

open access: yesSci Rep, 2023
Robitaille M   +4 more
europepmc   +1 more source

Time-resolved charge detection with cross-correlation techniques

open access: yes, 2009
We present time-resolved charge sensing measurements on a GaAs double quantum dot with two proximal quantum point contact (QPC) detectors. The QPC currents are analyzed with cross-correlation techniques, which enables us to measure dot charging and ...
B. Küng   +8 more
core   +1 more source

A Compact and Power-Efficient Noise Generator for Stochastic Simulations. [PDF]

open access: yesIEEE Trans Circuits Syst I Regul Pap, 2023
Zhao H, Sarpeshkar R, Mandal S.
europepmc   +1 more source

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