Results 61 to 70 of about 2,718 (178)

A novel and precise time domain description of MOSFET low frequency noise due to random telegraph signals

, 2010
Nowadays, random telegraph signals play an important role in integrated circuit performance variability, leading for instance to failures in memory circuits.
da Silva R., GILSON INACIO WIRTH, LUCAS BRUSAMARELLO, Machlup, Press W., ROBERTO DA SILVA   +5 more
core   +1 more source

Ultra‐Sensitive Short‐Wave Infrared Single‐Photon Detection Using a Silicon Single‐Electron Transistor

Advanced Electronic Materials, Volume 11, Issue 6, May 2025.
This paper presents an innovative approach for short‐wave infrared single‐photon detection, achieving a remarkable noise‐equivalent power of 10⁻19 W Hz−1/2 using silicon single‐electron transistors. The detection relies on shift in SET current peaks and occurrence of random telegraph signals under light irradiation, unlocks new possibilities for ...
Pooja Sudha, Shogo Miyagawa, Arup Samanta, Daniel Moraru   +3 more
wiley   +1 more source

Displacement Damage Effects in Pinned Photodiode CMOS Image Sensors [PDF]

, 2012
This paper investigates the effects of displacement damage in Pinned Photodiode (PPD) CMOS Image Sensors (CIS) using proton and neutron irradiations. The DDD ranges from 12 TeV/g to ${1.2 times 10^{6}}$ TeV/g.
Bardoux, Alain, Corbière, Franck, Girard, Sylvain, Goiffon, Vincent, Magnan, Pierre, Virmontois, Cédric   +5 more
core   +3 more sources

Impact of Light Excitation on Liquid Gate‐All‐Around Silicon Nanowire Field‐Effect Transistor Biosensors with Bowtie Antenna

Advanced Materials Technologies, Volume 10, Issue 5, March 4, 2025.
A key role of a bowtie antenna under 940 nm LED excitations is demonstrated to activate two‐level random telegraph signal (RTS) in high‐quality liquid‐gated gate‐all‐around Si nanowire field‐effect transistors. Noise spectroscopy data reflect good tunability of RTS parameters and the opportunity for their optimization. These findings open prospects for
Yongqiang Zhang, Kai Li, Nazarii Boichuk, Denys Pustovyi, Valeriia Chekubasheva, Hanlin Long, Mykhailo Petrychuk, Svetlana Vitusevich   +7 more
wiley   +1 more source

Total Ionizing Dose Radiation-Induced Dark Current Random Telegraph Signal in Pinned Photodiode CMOS Image Sensors [PDF]

, 2018
In this work, several studies on Total Ionizing Dose effects on Pinned Photodiode CMOS images sensors are presented. More precisely, the evolution of a parasitic signal called Random Telegraph Signal is analysed through several photodiode designs.
Durnez, Clémentine, Goiffon, Vincent, Le Roch, Alexandre, Magnan, Pierre, Marcandella, Claude, Paillet, Philippe, Rizzolo, Serena, Rubaldo, Laurent, Virmontois, Cédric   +8 more
core   +1 more source

Electrophysiological Alterations in the Progression of Parkinson's Disease and the Therapeutic Effect of Tetrabenazine on Rats With Levodopa‐Induced Dyskinesia

CNS Neuroscience &Therapeutics, Volume 31, Issue 2, February 2025.
The distinct neural electrophysiological patterns in the PD and LID states. The abnormal functional connectivity and information flow direction in PD state. The cumulative effects of chronic l‐dopa administration on functional connectivity and information flow direction in LID states.
Yuewei Bi, Pengfei Wang, Min Li, Zhuyong Wang, Siyuan Lv, Yong Yang, Wangming Zhang   +6 more
wiley   +1 more source

Finite-temperature Fermi-edge singularity in tunneling studied using random telegraph signals

, 1996
We show that random telegraph signals in metal-oxide-silicon transistors at millikelvin temperatures provide a powerful means of investigating tunneling between a two-dimensional electron gas and a single defect state.
A.B. Fowler, A.K. Geim, B. A. Muzykantskii, B. Golding, B. Vinter, B.I. Altshuler, B.I. Altshuler, C.G. Smith, C.W.J. Beenakker, D. H. Cobden, D.C. Ralph, D.E. Averin, D.H. Cobden, D.H. Cobden, G.D. Mahan, G.M. Gusev, J. Friedel, K. Ohtaka, K.A. Matveev, K.S. Ralls, K.S. Ralls, L.I. Glazman, M. Combescot, M. Schulz, M.A. Reed, M.J. Kirton, M.W. Dellow, N.C. Van der Vaart, P. Nozieres, P.A. Lee, P.L. McEuen, P.W. Anderson, S. Feng, S. Hershfeld, T.K. Ng, V.V. Ponomarenko, Y. Meir   +36 more
core   +1 more source

Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs [PDF]

, 2003
Intrinsic parameter fluctuations introduced by discreteness of charge and matter will play an increasingly important role when semiconductor devices are scaled to decananometer and nanometer dimensions in next-generation integrated circuits and systems ...
Asenov, A., Brown, A.R., Davies, J.H., Kaya, S., Slavcheva, G.   +4 more
core   +2 more sources

Chronic short sleep duration lengthens reaction time, but the deficit is not associated with motor preparation

Journal of Sleep Research, Volume 34, Issue 1, February 2025.
Summary The purpose of this study was to investigate the association between chronic sleep duration and reaction time performance and motor preparation during a simple reaction time task with a startling acoustic stimulus in adults. This cross‐sectional study included self‐reported short sleepers (n = 25, ≤ 6 hr per night) and adequate sleepers (n = 25,
Caroline Dutil, Julia De Pieri, Christin M. Sadler, Dana Maslovat, Jean‐Philippe Chaput, Anthony N. Carlsen   +5 more
wiley   +1 more source

Probabilistic computing with future deep sub-micrometer devices: a modelling approach [PDF]

, 2005
An approach is described that investigates the potential of probabilistic "neural" architectures for computation with deep sub-micrometer (DSM) MOSFETs.
Cheng, B., Hamid, N. H., Laurenson, D., Murray, A.F., Roy, S.   +4 more
core   +1 more source