Results 71 to 80 of about 1,687 (140)

Trapped charge dynamics in InAs nanowires

open access: yes, 2012
We study random telegraph noise in the conductance of InAs nanowire field-effect transistors due to single electron trapping in defects. The electron capture and emission times are measured as functions of temperature and gate voltage for individual ...
Baugh, Jonathan   +4 more
core   +1 more source

Nonequilibrium 1/f Noise in Low-doped Manganite Single Crystals

open access: yes, 2007
1/f noise in current biased La0.82Ca0.18MnO3 crystals has been investigated. The temperature dependence of the noise follows the resistivity changes with temperature suggesting that resistivity fluctuations constitute a fixed fraction of the total ...
B. Dolgin   +7 more
core   +1 more source

Individual charge traps in silicon nanowires: Measurements of location, spin and occupation number by Coulomb blockade spectroscopy

open access: yes, 2006
We study anomalies in the Coulomb blockade spectrum of a quantum dot formed in a silicon nanowire. These anomalies are attributed to electrostatic interaction with charge traps in the device.
Berkovits   +44 more
core   +2 more sources

Real-time detection of single electron tunneling using a quantum point contact

open access: yes, 2004
We observe individual tunnel events of a single electron between a quantum dot and a reservoir, using a nearby quantum point contact (QPC) as a charge meter.
Cooper   +7 more
core   +2 more sources

Dynamic Photoresponse of a DNTT Organic Phototransistor. [PDF]

open access: yesSensors (Basel), 2023
Campajola M   +4 more
europepmc   +1 more source

Microscopic Analysis of Low-Frequency Flux Noise in YBa$_2$Cu$_3$O$_7$ Direct Current Superconducting Quantum Interference Devices

open access: yes, 2004
We use low-temperature scanning electron microscopy combined with SQUID detection of magnetic flux to image vortices and to investigate low-frequency flux noise in YBa$_2$Cu$_3$O$_7$ thin film SQUIDs.
Doenitz, D.   +3 more
core   +1 more source

A cryogenic amplifier for fast real-time detection of single-electron tunneling

open access: yes, 2007
We employ a cryogenic High Electron Mobility Transistor (HEMT) amplifier to increase the bandwidth of a charge detection setup with a quantum point contact (QPC) charge sensor. The HEMT is operating at 1K and the circuit has a bandwidth of 1 MHz.
Nooitgedagt, T.   +4 more
core   +2 more sources

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