Results 61 to 70 of about 1,687 (140)

Radiation hardness of MALTA2 monolithic CMOS imaging sensors on Czochralski substrates

European Physical Journal C: Particles and Fields
MALTA2 is the latest full-scale prototype of the MALTA family of Depleted Monolithic Active Pixel Sensors (DMAPS) produced in Tower Semiconductor 180 nm CMOS sensor imaging technology. In order to comply with the requirements of high energy physics (HEP)
Milou van Rijnbach, Dumitru Vlad Berlea, Valerio Dao, Martin Gaži, Phil Allport, Ignacio Asensi Tortajada, Prafulla Behera, Daniela Bortoletto, Craig Buttar, Florian Dachs, Ganapati Dash, Dominik Dobrijević, Lucian Fasselt, Leyre Flores Sanz de Acedo, Andrea Gabrielli, Laura Gonella, Vicente González, Giuliano Gustavino, Pranati Jana, Long Li, Heinz Pernegger, Francesco Piro, Petra Riedler, Heidi Sandaker, Carlos Solans Sánchez, Walter Snoeys, Tomislav Suligoj, Marcos Vázquez Núñez, Anusree Vijay, Julian Weick, Steven Worm, Abdelhak M. Zoubir   +31 more
doaj   +1 more source

Ultra‐Sensitive Short‐Wave Infrared Single‐Photon Detection Using a Silicon Single‐Electron Transistor

Advanced Electronic Materials, Volume 11, Issue 6, May 2025.
This paper presents an innovative approach for short‐wave infrared single‐photon detection, achieving a remarkable noise‐equivalent power of 10⁻19 W Hz−1/2 using silicon single‐electron transistors. The detection relies on shift in SET current peaks and occurrence of random telegraph signals under light irradiation, unlocks new possibilities for ...
Pooja Sudha, Shogo Miyagawa, Arup Samanta, Daniel Moraru   +3 more
wiley   +1 more source

Impact of Light Excitation on Liquid Gate‐All‐Around Silicon Nanowire Field‐Effect Transistor Biosensors with Bowtie Antenna

Advanced Materials Technologies, Volume 10, Issue 5, March 4, 2025.
A key role of a bowtie antenna under 940 nm LED excitations is demonstrated to activate two‐level random telegraph signal (RTS) in high‐quality liquid‐gated gate‐all‐around Si nanowire field‐effect transistors. Noise spectroscopy data reflect good tunability of RTS parameters and the opportunity for their optimization. These findings open prospects for
Yongqiang Zhang, Kai Li, Nazarii Boichuk, Denys Pustovyi, Valeriia Chekubasheva, Hanlin Long, Mykhailo Petrychuk, Svetlana Vitusevich   +7 more
wiley   +1 more source

Electrophysiological Alterations in the Progression of Parkinson's Disease and the Therapeutic Effect of Tetrabenazine on Rats With Levodopa‐Induced Dyskinesia

CNS Neuroscience &Therapeutics, Volume 31, Issue 2, February 2025.
The distinct neural electrophysiological patterns in the PD and LID states. The abnormal functional connectivity and information flow direction in PD state. The cumulative effects of chronic l‐dopa administration on functional connectivity and information flow direction in LID states.
Yuewei Bi, Pengfei Wang, Min Li, Zhuyong Wang, Siyuan Lv, Yong Yang, Wangming Zhang   +6 more
wiley   +1 more source

Finite-temperature Fermi-edge singularity in tunneling studied using random telegraph signals

, 1996
We show that random telegraph signals in metal-oxide-silicon transistors at millikelvin temperatures provide a powerful means of investigating tunneling between a two-dimensional electron gas and a single defect state.
A.B. Fowler, A.K. Geim, B. A. Muzykantskii, B. Golding, B. Vinter, B.I. Altshuler, B.I. Altshuler, C.G. Smith, C.W.J. Beenakker, D. H. Cobden, D.C. Ralph, D.E. Averin, D.H. Cobden, D.H. Cobden, G.D. Mahan, G.M. Gusev, J. Friedel, K. Ohtaka, K.A. Matveev, K.S. Ralls, K.S. Ralls, L.I. Glazman, M. Combescot, M. Schulz, M.A. Reed, M.J. Kirton, M.W. Dellow, N.C. Van der Vaart, P. Nozieres, P.A. Lee, P.L. McEuen, P.W. Anderson, S. Feng, S. Hershfeld, T.K. Ng, V.V. Ponomarenko, Y. Meir   +36 more
core   +1 more source

Dark Current Random Telegraph Signals in Solid-State Image Sensors [PDF]

, 2013
This paper focuses on the Dark Current-Random Telegraph Signal (DC-RTS) in solid-state image sensors. The DCRTS is investigated in several bulk materials, for different surface interfaces and for different trench isolation interfaces.
Bardoux, Alain, Geoffray, Hervé, Gilard, Olivier, Girard, Sylvain, Goiffon, Vincent, Magnan, Pierre, Raine, Mélanie, Robbins, Mark S., Tauziède, Laurie, Virmontois, Cédric   +9 more
core   +4 more sources

Random telegraph signals in charge coupled devices [PDF]

, 2004
An investigation of fluctuating pixels resulting from proton irradiation of an E2V Technologies CCD47-20 device is presented. The device structure,experimental set up and irradiation methodology are described, followed by a detailed analysis of radiation
Holland, AD, Hutchinson, IB, Smith, DR
core  

One-by-one trap activation in silicon nanowire transistors

, 2010
Flicker or 1/f noise in metal-oxide-semiconductor field-effect transistors (MOSFETs) has been identified as the main source of noise at low frequency. It often originates from an ensemble of a huge number of charges trapping and detrapping.
A Fujiwara, CT Rogers, F Liu, G Guibaudo, G Reimbold, J Chan, K Nishiguchi, K Nishiguchi, K Nishiguchi, KR Farmer, L Guo, M Xiao, MJ Kirton, MJ Uren, N Clement, PG Collins, S Machlup, Y McLin   +17 more
core   +1 more source

The Discrete Noise of Magnons

, 2018
Magnonics is a rapidly developing subfield of spintronics, which deals with devices and circuits that utilize spin currents carried by magnons - quanta of spin waves. Magnon current, i.e.
Balandin, A. A., Balinskiy, M., Kargar, F., Khitun, A., Rumyantsev, S.   +4 more
core   +1 more source

Deep neural network analysis models for complex random telegraph signals. [PDF]

Sci Rep, 2023
Robitaille M, Yang H, Wang L, Deng B, Kim NY.   +4 more
europepmc   +1 more source