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Milestones in deep reactive ion etching

The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05., 2005
Deep reactive ion etching (DRIE) has virtually changed MEMS. The basic technology originally developed at Bosch overcomes design restrictions and compatibility problems related to the old wet-etching technology. Today, after a decade of "Bosch DRIE" in the field, a large variety of new MEMS devices is fabricated using this technology, and a broad DRIE ...
F. Laermer, A. Urban
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Sidewall Tapering in Reactive Ion Etching

Journal of The Electrochemical Society, 1985
On signale un phenomene de retrecissement suivant les parois laterales en gravure ionique reactive, avec une pente ∼75°. Une facette du masque de photoresist se forme a cause de la variation angulaire de la vitesse de perte de resist. L'angle de la facette avec le plan vertical est d'environ 16° et sa vitesse de propagation plus de deux fois la vitesse
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Reactive ion etching of GaAs in CCl2F2

Applied Physics Letters, 1981
The reactive ion etching of (100) GaAs in CCl2F2 and mixed CCl2F2+Ar discharges has been investigated. Anisotropic etching with removal rates R of 0.8 mm/min have been obtained in pure CCl2F2 discharges operated at 5.3 Pa (40 mTorr) and −3 kV, whereas the physical sputtering rate in pure Ar discharges under these conditions was only 0.04 mm/min.
J. E. Greene, R. E. Klinger
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Radial Etch Rate Nonuniformity in Reactive Ion Etching

Journal of The Electrochemical Society, 1984
A study was performed to determine some of the causes of the edge‐to‐center "bullseye" clearing pattern, in which the etch rate decreases monotonically from the wafer periphery to its center, observed when certain films are etched in a parallel‐plate reactive ion etching system.
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Influence of resists on reactive ion etching

Czechoslovak Journal of Physics, 1993
In the course of plasma etching we can observe a loading effect, i.e. the etch rate depends on the size of the etched surface exposed to the plasma. This phenomenon was explained according to Mogab by the plasma active etch species depletion via a rapid etch reaction.
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Anisotropic reactive ion etching of titanium

Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1989
The reactive ion etching of titanium is described using rf discharges of CCl4 and O2 with additions of fluorine containing gases. Because of these additions the titanium etch rate increases substantially in comparison with the pure CCl4/O2 plasma. This is presumably due to a shift of equilibrium reactions within the discharge towards the production of ...
K. Blumenstock, D. Stephani
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CHF3-reactive ion etching for waveguides

Sensors and Actuators A: Physical, 1993
Abstract The most favourable technological process to obtain Si/SiO 2 /PSG/SiO 2 -type waveguides by reactive ion etching has been developed. Preliminary experiments to find suitable gaseous mixtures to etch at higher etching rates, as well as to obtain higher selectivities against photoresist mask, have been designed.
J. Muñoz, R. Gonzalez, M. Tudanca, Carlos Domínguez   +3 more
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Reactant supply in reactive ion etching

Journal of Vacuum Science and Technology, 1979
In reactive ion etching, the etch rate may be reactant limited, so that a measurement of reactant supply is neccessary to understand the details of the etching process. A quantitative determination of reactant supply can be obtained by measuring the total dissociation of the etching gas.
John L. Mauer, Joseph S. Logan
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Deep reactive ion etching of PMMA

Applied Surface Science, 2004
Abstract The deep reactive ion etching of PMMA in O 2 , O 2 /CHF 3 discharges has been examined as a function of plasma parameters such as pressure, power and relative composition. It is demonstrated that the etching rate initially increases with pressure but decreases after 6.65 Pa.
Congchun Zhang, Chunsheng Yang, Duifu Ding   +2 more
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Damage effects in reactive ion etching

AIP Conference Proceedings, 1984
Reactive ion etching can cause extensive, electrically active damage. This damage can be categorized as (i) impurity and etching‐ion implantation, (ii) residue and film formation, and (iii) intrinsic bonding damage. Instrinsic bonding damage is the most difficult to deal with since it appears inherent to dry etching processes which employ directed ion ...
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