Results 261 to 270 of about 73,664 (313)

Damage-Free Vertical Microfabrication of α-Quartz via HF Gas-Phase Catalyst Etching. [PDF]

ACS Appl Mater Interfaces
Sano KH, Ono Y, Tsukiyama K, Nagai S, Saito A, Hayashi Y, Yanagitani T.   +6 more
europepmc   +1 more source

Polishing of CVD-Diamond Substrates Using Reactive Ion Etching

, 1995
Gopi M.R. Sirineni, Hameed A. Naseem, W. D. Brown, Ajay P. Malshe   +3 more
openalex   +1 more source

Fluoride-Free MXene-Polymer Composites for Li-Metal and Li-S Batteries: Comparative Synthesis Methods, Integration Rules, Challenges, and Future Directions. [PDF]

Polymers (Basel)
Khang TL, Bae J.
europepmc   +1 more source

Experimental study of inductively coupled plasma etching of patterned single crystal diamonds. [PDF]

Sci Rep
Zhao L, Wang X, Jiang N, Nishimura K, Yi J, Fang S.   +5 more
europepmc   +1 more source

Quasi-anisotropic wet etching of glass creates inclined microstructures for advanced optical and MEMS devices. [PDF]

Microsyst Nanoeng
Yu J, Li F, Sun H, Zhu Y, Shi Y, Wang R, Du L, Li Y, Wu M, Liu J.   +9 more
europepmc   +1 more source

Fabrication of Nanostructures on the Surface of Micro-Lens Arrays Using Reactive Ion-Etching

Tae‐Jong Hwang, Young Wook Park, Eun Jeong Bae, Geun Su Choi   +3 more
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Reactive ion beam etching and characterization of high-Tc superconductor Bi2212

, 2009
Hasan Köseoğlu
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Reactive Ion-Beam Etching

1984
Publisher Summary This chapter discusses reactive ion-beam etching (RIBE), which is the technique of removing material from a surface by impinging on it a beam of chemically reactive ions. In fact, RIBE has played a dual role in the evolution of dry-etching techniques for electronic device and integrated circuit applications. For as well as providing
B.A. HEATH, T.M. MAYER
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Dry Etching of GaN Using Reactive Ion Beam Etching and Chemically Assisted Reactive Ion Beam Etching

MRS Proceedings, 1997
ABSTRACTDry etching characteristics of GaN using reactive ion beam etching (RIBE) were studied. Etching profile, etching rate and etching selectivity to a photoresist (PR) mask were investigated as a function of various etching parameters. Characteristics of chemically assisted reactive ion beam etching (CARIBE) and RIBE were compared at varied ...
Jae-Won Lee, Hyong-Soo Park, Yong-Jo Park, Myong-Cheol Yoo, Tae-Il Kim, Hyeon-Soo Kim, Geun-Yong Yeom   +6 more
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Reactive ion etching of silicon

Journal of Vacuum Science and Technology, 1979
Reactive ion etching of silicon substrates in a plasma containing chlorinated species does not result in undercut of a permanent mask. When the silicon is very highly doped it behaves as a different material and undercut has been observed. This phenomenon will be discussed.
G. C. Schwartz, P. M. Schaible
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