Results 271 to 280 of about 73,664 (313)
Some of the next articles are maybe not open access.
Reactive ion etching of LiNbO3
Applied Physics Letters, 1981We describe the reactive ion etching of LiNbO3 in gas mixtures containing CCl2F2, CF4, O2, and Ar. The effects of gas composition and pressure, in the range 1–10-μm total pressure are discussed. Because it is possible to replicate fine features (∼2000 Å) with control of etch profiles, we expect the process to be used for three-dimensional patterning of
J. L. Jackel +3 more
openaire +1 more source
Physics Today, 1986
Our ability to develop and build ever smaller microelectronic devices depends strongly on the capability to generate a desired device pattern in an image layer (photoresist) by lithography and then to transfer this pattern into the layers of materials of which the device consists.
openaire +1 more source
Our ability to develop and build ever smaller microelectronic devices depends strongly on the capability to generate a desired device pattern in an image layer (photoresist) by lithography and then to transfer this pattern into the layers of materials of which the device consists.
openaire +1 more source
Reactive ion etching of diamond
Applied Physics Letters, 1989A reliable means of removing surface layers of diamond is of significant importance for microelectronics as well as for other applications such as polishing of the diamond surface. Preliminary studies using reactive ion etching with O2 and H2 showed etching rates of the order of 560 Å/min for thin carbon films and 350 Å/min for natural type II-A ...
G. S. Sandhu, W. K. Chu
openaire +1 more source
Reactive ion etching of niobium
Journal of Vacuum Science and Technology, 1981The reactive gases CBrF3 and CF4 have both been found to be effective in the reactive ion etching of niobium. At relatively high pressures, 100 mTorr, rapid etching with a small degree of undercutting occurs at moderate rf power levels. At lower pressures, higher rf power levels, ≳1 W/ cm2, are required but vertical edge profiles result.
T. T. Foxe +4 more
openaire +1 more source
Microwave etching device for reactive ion etching
Materials Science and Engineering: A, 1991Abstract Electron cycloton resonance (ECR) plasmas are different from glow dischargeplasmas and introduce new complexities and possibilities. For dry etching processes (reactive ion etching), the operation in a low pressure regime and the high etch rates achievable at low ion energies,which can be controlled by an independently adjustable r.f.
openaire +1 more source
1980 International Electron Devices Meeting, 1980
The requirements of VLSI have lead to the development of etching techniques that are capable of transferring ever smaller dimension patterns into the various films that make up a ...
openaire +1 more source
The requirements of VLSI have lead to the development of etching techniques that are capable of transferring ever smaller dimension patterns into the various films that make up a ...
openaire +1 more source
Reactive ion etching for failure analysis applications
30th Annual Proceedings Reliability Physics 1992, 1992An attempt to develop and to optimize reactive ion etch processes for failure analysis applications is discussed. Reactive ion etching (RIE) provides several advantages over wet and plasma etching. Delayering of interlevel dielectric and passivation films with RIE results in anisotropic sidewalls.
Marsha T. Abramo +2 more
openaire +1 more source
Ultrahigh Resolution Titanium Deep Reactive Ion Etching
ACS Applied Materials & Interfaces, 2017Titanium (Ti) represents a promising new material for microelectromechanical systems (MEMS) because of its unique properties. Recently, this has been made possible with the advent of processes that enable deep reactive ion etching (DRIE) of high-aspect-ratio (HAR) structures in bulk Ti substrates.
Bryan W. K. Woo +5 more
openaire +2 more sources
Colloidal Lithographic Nanopatterning via Reactive Ion Etching
Journal of the American Chemical Society, 2004We report here a novel colloidal lithographic approach to the fabrication of nonspherical colloidal particle arrays with a long-range order by selective reactive ion etching (RIE) of multilayered spherical colloidal particles. First, layered colloidal crystals with different crystal structures (or orientations) were self-organized onto substrates. Then,
Choi, DG +3 more
openaire +3 more sources
Reactive ion etching and plasma etching of tungsten
Microelectronic Engineering, 1993Abstract Tungsten etching has been studied in audio frequent plasmas with NF3-O2 and SF6-O2 mixtures. The influence of etch mode, gas flows, pressure and power has been investigated. It is possible to etch tungsten chemically but large concentrations of free fluorine are needed. These are supplied more easily by NF3 than by SF6.
P. Verdonck, G. Brasseur, J. Swart
openaire +1 more source