Results 41 to 50 of about 106,837 (225)

Two-step Fabrication of Large Area SiO2/Si Membranes

Medžiagotyra, 2012
Two-step fabrication technique of SiO2/Si membrane combining the deep local etching of double side polished and thermally oxidized silicon <100> wafer in tetramethylammonium hydroxide (TMAH) water solution and SF6/O2 reactive ion etching is ...
Viktoras GRIGALIŪNAS, Brigita ABAKEVIČIENĖ, Ignas GRYBAS, Angelė GUDONYTĖ, Vitoldas KOPUSTINSKAS, Darius VIRŽONIS, Ramūnas NAUJOKAITIS, Sigitas TAMULEVIČIUS   +7 more
doaj   +1 more source

High temperature reactive ion etching of iridium thin films with aluminum mask in CF4/O2/Ar plasma

AIP Advances, 2016
Reactive ion etching (RIE) technology for iridium with CF4/O2/Ar gas mixtures and aluminum mask at high temperatures up to 350 °C was developed. The influence of various process parameters such as gas mixing ratio and substrate temperature on the etch ...
Chia-Pin Yeh, Marco Lisker, Bodo Kalkofen, Edmund P. Burte   +3 more
doaj   +1 more source

Atomic Depth Image Transfer of Large-Area Optical Quartz Materials Based on Pulsed Ion Beam

Micromachines
The high-efficiency preparation of large-area microstructures of optical materials and precision graphic etching technology is one of the most important application directions in the atomic and near-atomic-scale manufacturing industry.
Shuyang Ran, Kefan Wen, Lingbo Xie, Xingyu Zhou, Ye Tian, Shuo Qiao, Feng Shi, Xing Peng   +7 more
doaj   +1 more source

Redeposition-Free Deep Etching in Small KY(WO₄)₂ Samples

Micromachines, 2020
KY(WO4)2 is a promising material for on-chip laser sources. Deep etching of small KY(WO4)2 samples in combination with various thin film deposition techniques is desirable for the manufacturing of such devices.
Simen Mikalsen Martinussen, Raimond N. Frentrop, Meindert Dijkstra, Sonia Maria Garcia-Blanco   +3 more
doaj   +1 more source

Selectively dry etched of p-GaN/InAlN heterostructures using BCI3-based plasma for normally-off HEMT technology

Materials Research Express, 2021
In this paper, an alternative selective dry etching of p-GaN over InAlN was studied as a function of the ICP source powers, RF chuck powers and process pressures by using inductively coupled plasma reactive ion etching (ICP RIE) system.
A Toprak, D Yılmaz, E Özbay
doaj   +1 more source

Formation of broadband antireflective and superhydrophilic subwavelength structures on fused silica using one-step self-masking reactive ion etching

Scientific Reports, 2015
Fused silica subwavelength structures (SWSs) with an average period of ~100 nm were fabricated using an efficient approach based on one-step self-masking reactive ion etching.
X. Ye, Xiaodong Jiang, Jin Huang, F. Geng, Laixi Sun, X. Zu, Weidong Wu, Wanguo Zheng   +7 more
semanticscholar   +1 more source

Formation of distinctive structures of GaN by inductively-coupled-plasma and reactive ion etching under optimized chemical etching conditions

AIP Advances, 2017
We focused on inductively coupled plasma and reactive ion etching (ICP–RIE) for etching GaN and tried to fabricate distinctive GaN structures under optimized chemical etching conditions.
N. Okada, K. Nojima, N. Ishibashi, K. Nagatoshi, N. Itagaki, R. Inomoto, S. Motoyama, T. Kobayashi, K. Tadatomo   +8 more
doaj   +1 more source

A Comparative Study on the Effects of Passivation Methods on the Carrier Lifetime of RIE and MACE Silicon Micropillars

Applied Sciences, 2019
Silicon micropillars have been suggested as one of the techniques for improving the efficiency of devices. Fabrication of micropillars has been done in several ways—Metal Assisted Chemical Etching (MACE) and Reactive Ion Etching (RIE) being the ...
Amal Kabalan
doaj   +1 more source

Nanofabrication of Vertically Aligned 3D GaN Nanowire Arrays with Sub-50 nm Feature Sizes Using Nanosphere Lift-off Lithography

Proceedings, 2017
Vertically aligned 3D gallium nitride (GaN) nanowire arrays with sub-50 nm feature sizes were fabricated using a nanosphere lift-off lithography (NSLL) technique combined with hybrid top-down etching steps (i.e., inductively coupled plasma dry reactive ...
Tony Granz, Shinta Mariana, Gerry Hamdana, Feng Yu, Muhammad Fahlesa Fatahilah, Irene Manglano Clavero, Prabowo Puranto, Zhi Li, Uwe Brand, Joan Daniel Prades, Erwin Peiner, Andreas Waag, Hutomo Suryo Wasisto   +12 more
doaj   +1 more source

Measurements of reactive ion etching process effect using long-period fiber gratings.

Optics Express, 2014
The paper presents for the first time a study of long-period fiber gratings (LPFGs) applied for the measurements of reactive ion etching (RIE) process effect in various places of a plasma reactor.
M. Smietana, M. Koba, P. Mikulic, W. Bock   +3 more
semanticscholar   +1 more source