Results 51 to 60 of about 106,837 (225)
A road to hydrogenating graphene by a reactive ion etching plasma [PDF]
, 2011 We report the hydrogenation of single and bilayer graphene by an argon-hydrogen plasma produced in a reactive ion etching (RIE) system. Electronic transport measurements in combination with Raman spectroscopy are used to link the electric mean free path ...
M.Wojtaszek +4 more
semanticscholar +1 more source
Journal of Asian Ceramic Societies, 2021 This report suggests the process of hydrogen doping in vanadium dioxide (VO2) nanobeam using hydrogen plasma, and in turn reveals the modification in the structural, chemical, physical, and electrical properties of VO2 nanobeam that are associated with ...
Hyunwoo Kang +6 more
doaj +1 more source
, 2017 This study empirically investigates the influences of several parameters on surface morphology and etch rate in a high-aspect-ratio silicon etching process. Two function formulas were obtained, revealing the relationship between the controlled parameters
Tiantong Xu +4 more
semanticscholar +1 more source
Nature Communications, 2019 For organic light-emitting diodes (OLEDs) to reach their potential for lighting applications, improved light out-coupling using industry-compatible methods are required.
Yungui Li +11 more
doaj +1 more source
, 2014 Black Silicon nanostructures are fabricated by Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE) in a gas mixture of SF6 and O2 at non-cryogenic temperatures.
M. Steglich +5 more
semanticscholar +1 more source
Low-pressure plasma-etching of bulk polymer materials using gas mixture of CF4 and O2
AIP Advances, 2013 In this study, we have proposed a low-pressure reactive ion etching of bulk polymer materials with a gas mixture of CF4 and O2, and have achieved precise fabrication of poly(methyl methacrylate) (PMMA) and perfluoroalkoxy (PFA) bulk polymer plates with ...
Hirofumi Nabesawa +6 more
doaj +1 more source
Crystal structure induced residue formation on 4H-SiC by reactive ion etching
AIP Advances, 2016 The (000 1 ¯ ) C face of 4H-SiC wafer was etched by reactive ion etching in SF6/O2 plasma. The effect of etching
Yi-hong Liu +5 more
doaj +1 more source
RF reactor with asymmetrical electrodes for reactive ion etching of semiconductors [PDF]
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2011 Results of experimental and theoretical study of RF CCP reactor for reactive ion etching of semiconductors are presented. Breakdown curve and domain of the discharge existence are measured in various gases (argon, fluorocarbon, oxygen).
Dudin S. V. +3 more
doaj
Single crystal diamond micro-disk resonators by focused ion beam milling
APL Photonics, 2018 We report on single crystal diamond micro-disk resonators fabricated in bulk chemical vapor deposition diamond plates (3 mm × 3 mm × 0.15 mm) using a combination of deep reactive ion etching and Focused Ion Beam (FIB) milling.
Teodoro Graziosi +3 more
doaj +1 more source
Low-Damage Reactive Ion Etching of Nanoplasmonic Waveguides with Ultrathin Noble Metal Films
Applied Sciences, 2019 Nanoplasmonic waveguides utilizing surface plasmon polaritons (SPPs) propagation have been investigated for more than 15 years and are now well understood.
Alina A. Dobronosova +14 more
doaj +1 more source