Results 61 to 70 of about 156,728 (358)
Mesoporous Silica Microspheres by Super‐Fast Alkaline Etching of Micrometer‐Sized Stöber Particles
Advanced Engineering Materials, EarlyView.Microscale silica particles are prepared along with a modified, scalable Stöber synthesis using the continuous addition of tetraethoxy silane to an ethanolic solution of ammonia with KCl. Etching with hydroxide ions at 95 °C gave porous analogs within minutes. Monodisperse particles are isolable in high yield after precipitation in ethanol.
Adrian Vaghar +2 more
wiley +1 more source
Materials Research Express, 2021 In this paper, an alternative selective dry etching of p-GaN over InAlN was studied as a function of the ICP source powers, RF chuck powers and process pressures by using inductively coupled plasma reactive ion etching (ICP RIE) system.
A Toprak, D Yılmaz, E Özbay
doaj +1 more source
Fabrication of photonic band-gap crystals [PDF]
, 1995 We describe the fabrication of three-dimensional photonic crystals using a reproducible and reliable procedure consisting of electron beam lithography followed by a sequence of dry etching steps.
Cheng, C. C., Scherer, A.
core +1 more source
Advanced Engineering Materials, EarlyView.This study explores the effects of pixel size and spacing when fabricating electroluminescent (EL) multipixel displays. COMSOL simulations identify the impact of pixel dimensions and spacing on electric field distribution and lighting efficiency. Flexible, high‐resolution EL pixel arrays are reverse offset printed, achieving a 96% reduction in pixel ...
Huanghao Dai +3 more
wiley +1 more source
AIP Advances, 2017 We focused on inductively coupled plasma and reactive ion etching (ICP–RIE) for etching GaN and tried to fabricate distinctive GaN structures under optimized chemical etching conditions.
N. Okada +8 more
doaj +1 more source
The black silicon method: a universal method for determining the parameter setting of a fluorine-based reactive ion etcher in deep silicon trench etching with profile control [PDF]
, 1994 Very deep trenches (up to 200 µm) with high aspect ratios (up to 10) in silicon and polymers are etched using a fluorine-based plasma (SF6/O2/CHF3). Isotropic, positively and negatively (i.e.
de Boer, Meint J. +4 more
core +4 more sources
, 2017 This study empirically investigates the influences of several parameters on surface morphology and etch rate in a high-aspect-ratio silicon etching process. Two function formulas were obtained, revealing the relationship between the controlled parameters
Tiantong Xu +4 more
semanticscholar +1 more source
Measurements of reactive ion etching process effect using long-period fiber gratings.
Optics Express, 2014 The paper presents for the first time a study of long-period fiber gratings (LPFGs) applied for the measurements of reactive ion etching (RIE) process effect in various places of a plasma reactor.
M. Smietana +3 more
semanticscholar +1 more source
Direct Natural and Artificial Aging of Aluminum Alloy AlSi10Mg After Laser Powder‐Bed Fusion
Advanced Engineering Materials, EarlyView.Laser powder‐bed fusion of metals aluminum alloy AlSi10Mg has been directly aged. Artificial aging after natural aging is considered. The hardening potential is high for the top part of the samples as well as after short natural aging. The hardening potential is substantially reduced for the bottom part of the samples, as well as after natural aging of
Rabea Steuer +6 more
wiley +1 more source
InGaN Laser Diodes with Etched Facets for Photonic Integrated Circuit Applications
Micromachines, 2023 The main objective of this work is to demonstrate and validate the feasibility of fabricating (Al, In) GaN laser diodes with etched facets. The facets are fabricated using a two-step dry and wet etching process: inductively coupled plasma—reactive ion ...
Krzysztof Gibasiewicz +6 more
doaj +1 more source