Etching technique of high aspect ratio silicon trenches based on CMOS-MEMS process
Etching technique of deep silicon trenches with high aspect ratio is critical in improving integration and accuracy of Micro-Electro-Mechanical Systems(MEMS)sensor array and reducing the cost of it.
Zhang Haihua, Lv Yufei, Lu Zhongxuan
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Single-Step CMOS Compatible Fabrication of High Aspect Ratio Microchannels Embedded in Silicon
This paper presents a new method for the CMOS compatible fabrication of microchannels integrated into a silicon substrate. In a single-step DRIE process (Deep Reactive Ion Etching) a network of microchannels with High Aspect Ratio (HAR) up to 10, can be ...
Marta Kluba +4 more
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End-point determination of aluminum reactive ion etching by discharge impedance monitoring [PDF]
Katsumi Ukai, Kunio Hanazawa
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Response to ‘‘Comment on ‘Low-temperature reactive ion etching and microwave plasma etching of silicon’ ’’ [Appl. Phys. Lett. 5 3, 1665 (1988)] [PDF]
S. Tachi +2 more
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Comment on ‘‘Low-temperature reactive ion etching and microwave plasma etching of silicon’’ [Appl. Phys. Lett. 5 2, 616 (1988)] [PDF]
Jacques Pelletier
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Generation of powerful THz radiation from intrinsic Josephson Junctions (IJJs) of Bi2Sr2CaCu2O8+δ (Bi2212) may require mesas with large lateral dimensions. However, there are difficulties in fabrication of perfect rectangular mesas. The lateral angles of
H. Koseoglu +3 more
semanticscholar +1 more source
UV-Nanoimprint and Deep Reactive Ion Etching of High Efficiency Silicon Metalenses: High Throughput at Low Cost with Excellent Resolution and Repeatability. [PDF]
Dirdal CA +8 more
europepmc +1 more source
Effects of reactive ion etching on chemical vapor deposition [PDF]
C. Y. Wong, Philip E. Batson
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Unraveling the Mechanism of Maskless Nanopatterning of Black Silicon by CF4/H2 Plasma Reactive-Ion Etching. [PDF]
Ghezzi F +8 more
europepmc +1 more source
Gallium arsenide and aluminum gallium arsenide reactive ion etching in boron trichloride/argon mixtures [PDF]
Axel Scherer +2 more
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